Provided is a method of producing a light-emitting element, the method being capable of producing a light-emitting element including a first light emitting layer and banks on the first light emitting layer, without damaging the first light emitting layer. The method of producing a light-emitting element of the present disclosure includes: preparing a base element including a monochromatic first light emitting layer on a substrate; forming a patterned fluororesin film by disposing a photosensitive resin composition at least containing a fluororesin having a crosslinking site and a repeating unit derived from a hydrocarbon containing a fluorine atom, a solvent, and a photopolymerization initiator on the base element such that photosensitive resin composition partitions at least one region of the base element; and baking the patterned fluororesin film at a temperature of 200° C. or lower to cure the patterned fluororesin film.

A method for producing an actinic ray-sensitive or radiation-sensitive resin composition having a viscosity of 10 mPa.Math.s or more, the method containing a step 1 of charging at least a resin of which polarity increases by an action of an acid, a photoacid generator, and a solvent as raw materials into a stirring tank, and a step 2 of stirring the raw materials in the stirring tank. A liquid temperature in the stirring tank is controlled to be equal to or lower than a 3.0° C. higher temperature than a liquid temperature at a start of the step 2 throughout the entire step 2, and the control of the liquid temperature in the stirring tank in the step 2 is performed by passing an inert gas through the stirring tank.

A salt capable of producing a resist pattern with excellent line edge roughness is represented by formula (I): ##STR00001##
wherein, R.sup.1 represents —(X.sup.1—O).sub.o—R.sup.5, and o represents an integer of 0 to 6, R.sup.5 represents a hydrocarbon group having 1 to 12 carbon atoms, X.sup.1 represents a divalent hydrocarbon group having 2 to 12 carbon atoms, R.sup.2 represents an alkyl group having 1 to 12 carbon atoms or the like, I represents an integer of 0 to 3, and when I is 2 or more, a plurality of R.sup.2 may be the same or different from each other, R.sup.3 and R.sup.4 each represent a hydrogen atom or the like, m and n each represent 1 or 2, X.sup.0 represents a single bond, —CH.sub.2—, —O— or —S—, and R.sup.6 and R.sup.7 each represent an alkyl group having 1 to 4 carbon atoms which has a fluorine atom or the like.

A photoresist composition, comprising: a first polymer comprising: a first repeating unit comprising a hydroxyaryl group; a second repeating unit comprising a first acid-labile group; and a third repeating unit comprising a first base-soluble group having a pKa of 12 or less, and not comprising a hydroxyaryl group; wherein the first, second, and third repeating units of the first polymer are different from each other, and the first polymer is free of lactone groups; a second polymer comprising: a first repeating unit comprising a second acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a second base-soluble group having a pKa of 12 or less; wherein the first, second, and third repeating units of the second polymer are structurally different from each other; and a solvent, wherein the first polymer and the second polymer are different from each other.

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W.sub.1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W.sub.2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M.sup.+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source. ##STR00001##

A resist composition including a compound (D0) represented by general formula (d0) and a polymeric compound (A10) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below (in formula (d0), n represents an integer of 2 or more; in formula (a0-1), W.sup.1 represents a polymerizable group-containing group; C.sup.t represents a tertiary carbon atom, and the α-position of C.sup.t is a carbon atom which constitutes a carbon-carbon unsaturated bond; R.sup.11 represents an aromatic hydrocarbon group which may have a substituent, or a chain hydrocarbon group; R.sup.12 and R.sup.13 each independently represents a chain hydrocarbon group, or R.sup.12 and R.sup.13 are mutually bonded to form a cyclic group ##STR00001##

A copolymer including fluorinated units of formula (I):

—CX.sub.1X.sub.2—CX.sub.3X.sub.4—  (I)

in which each of the X.sub.1, X.sub.2, X.sub.3 and X.sub.4 is independently chosen from H, F and alkyl groups including from 1 to 3 carbon atoms which are optionally partially or totally fluorinated; and fluorinated units of formula (II):

—CX.sub.5X.sub.6—CX.sub.7Z—  (II)

in which each of the X.sub.5, X.sub.6 and X.sub.7 is independently chosen from H, F and alkyl groups including from 1 to 3 carbon atoms which are optionally partially or totally fluorinated, and in which Z is a photoactive group of formula —Y—Ar—R, Y representing an oxygen atom or an NH group or a sulfur atom, Ar representing an aryl group, and R being a monodentate or bidentate group including from 1 to 30 carbon atoms. Also, a process for preparing this copolymer, a composition including this copolymer, and a film obtained from this copolymer.

A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.

Sequence-block copolymers have well-controlled and precise monomer sequence. A highly ordered fluoro-containing block copolymer material can be prepared based on the sequence-block copolymer, which shows excellent patterning capability.

A radiation-sensitive resin composition contains: a polymer that includes a structural unit including an acid-labile group; and a radiation-sensitive acid generating agent. The radiation-sensitive acid generating agent includes a sulfonate anion and a radiation-sensitive cation. The sulfonate anion includes two or more rings, and an iodine atom and a monovalent group having 0 to 10 carbon atoms which includes at least one of an oxygen atom and a nitrogen atom bond to at least one of the two or more rings. The ring is preferably an aromatic ring. The radiation-sensitive acid generating agent is preferably a compound represented by formula (1). In the formula (1), A.sup.1 represents a group obtained from a compound which includes a ring having 3 to 20 ring atoms by removing (p+q+r+1) hydrogen atoms on the ring. ##STR00001##