Patent classifications
G03F7/025
COMPOUND, COMPOSITION FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR APPARATUS, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS
A compound including two or more partial structures shown by the following general formula (1-1) in the molecule,
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wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.
PHOTOSENSITIVE COMPOSITION FOR HOLOGRAM RECORDING, HOLOGRAM RECORDING MEDIUM, AND HOLOGRAM
To provide a photosensitive composition for hologram recording that enables further improvement in diffraction characteristic.A photosensitive composition for hologram recording that includes at least two kinds of photopolymerizable monomers, a photopolymerization initiator, a binder resin, and a polymerization inhibitor. The at least two kinds of photopolymerizable monomers are a monofunctional monomer and a polyfunctional monomer.
WATER-SOLUBLE DIACETYLENE, PHOTOLITHOGRAPHY COMPOSITION COMPRISING WATER-SOLUBLE DIACETYLENE MONOMER AND CONDUCTIVE POLYMER, AND FINE PATTERN PREPARATION METHOD USING SAME
Provided are a novel water-soluble diacetylene monomer, a composition for photolithography including the novel water-soluble diacetylene monomer and a conductive polymer, and a method of forming micropatterns using the composition. The water-soluble diacetylene monomer may not aggregate even when mixed with a water-soluble conductive polymer. Accordingly, a uniform composition for photolithography can be prepared by mixing a water-soluble conductive polymer with the diacetylene monomer, and micropatterns can be formed using the composition. More particularly, when the composition is formed into a thin film and then is irradiated with light, only light-irradiated portions of the diacetylene monomer are selectively crosslinked due to photopolymerization, thereby resulting in insoluble negative-type micropatterns.
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes exposing a portion of the resist layer. The resist layer includes an exposed region and an unexposed region. In the exposed region, the auxiliary reacts with the first linkers. The method also includes removing the unexposed region of the resist layer by using a developer to form a patterned resist layer. The developer includes a ketone-based solvent having a formula (a), wherein R.sub.1 is linear or branched C.sub.1-C.sub.5 alkyl, and R.sub.2 is linear or branched C.sub.3-C.sub.9 alkyl.
Method for preparing holographic pattern-expressing organogel using dithering mask
A method of manufacturing a holographic pattern-expressing organogel, by using a dithering mask, according to an aspect of the present disclosure includes: preparing a dithering mask including white pixels and black pixels arranged in periodic patterns; photocuring a polymer by passing an ultraviolet ray through the dithering mask; passing a first solvent through the cured polymer; and passing a second solvent through the cured polymer through which the first solvent is passed.
Method of forming a diamond film
Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.
RESIN FORMULATIONS FOR POLYMER-DERIVED CERAMIC MATERIALS
This disclosure enables direct 3D printing of preceramic polymers, which can be converted to fully dense ceramics. Some variations provide a preceramic resin formulation comprising a molecule with two or more CX double bonds or CX triple bonds, wherein X is selected from C, S, N, or O, and wherein the molecule further comprises at least one non-carbon atom selected from Si, B, Al, Ti, Zn, P, Ge, S, N, or O; a photoinitiator; a free-radical inhibitor; and a 3D-printing resolution agent. The disclosed preceramic resin formulations can be 3D-printed using stereolithography into objects with complex shape. The polymeric objects may be directly converted to fully dense ceramics with properties that approach the theoretical maximum strength of the base materials. Low-cost structures are obtained that are lightweight, strong, and stiff, but stable in the presence of a high-temperature oxidizing environment.
RESIN FORMULATIONS FOR POLYMER-DERIVED CERAMIC MATERIALS
This disclosure enables direct 3D printing of preceramic polymers, which can be converted to fully dense ceramics. Some variations provide a preceramic resin formulation comprising a molecule with two or more CX double bonds or CX triple bonds, wherein X is selected from C, S, N, or O, and wherein the molecule further comprises at least one non-carbon atom selected from Si, B, Al, Ti, Zn, P, Ge, S, N, or O; a photoinitiator; a free-radical inhibitor; and a 3D-printing resolution agent. The disclosed preceramic resin formulations can be 3D-printed using stereolithography into objects with complex shape. The polymeric objects may be directly converted to fully dense ceramics with properties that approach the theoretical maximum strength of the base materials. Low-cost structures are obtained that are lightweight, strong, and stiff, but stable in the presence of a high-temperature oxidizing environment.
STEPPED SUBSTRATE COATING COMPOSITION INCLUDING COMPOUND HAVING PHOTOCROSSLINKING GROUP DUE TO UNSATURATED BOND BETWEEN CARBON ATOMS
A stepped substrate coating composition includes: a compound (E) containing partial structures (I) and (II) and a solvent (F). The partial structure (II) contains a hydroxy group generated by an epoxy group and a proton-generating compound reaction; the partial structure (I) is at least one partial structure selected from partial structures of Formula (1-1) to Formula (1-5) or a partial structure combining a partial structure of Formula (1-6) and Formula (1-7) or Formula (1-8); and the partial structure (II) is a partial structure of Formula (2-1) or Formula (2-2). The photocurable stepped substrate coating composition wherein in the compound (E), the epoxy group and the hydroxy group are contained in a molar ratio of 0(Epoxy group)/(Hydroxy group)0.5 and the partial structure (II) is contained in a molar ratio of 0.01(Partial structure (II))/(Partial structure (I)+Partial structure (II))0.8.
STEPPED SUBSTRATE COATING COMPOSITION INCLUDING COMPOUND HAVING PHOTOCROSSLINKING GROUP DUE TO UNSATURATED BOND BETWEEN CARBON ATOMS
A stepped substrate coating composition includes: a compound (E) containing partial structures (I) and (II) and a solvent (F). The partial structure (II) contains a hydroxy group generated by an epoxy group and a proton-generating compound reaction; the partial structure (I) is at least one partial structure selected from partial structures of Formula (1-1) to Formula (1-5) or a partial structure combining a partial structure of Formula (1-6) and Formula (1-7) or Formula (1-8); and the partial structure (II) is a partial structure of Formula (2-1) or Formula (2-2). The photocurable stepped substrate coating composition wherein in the compound (E), the epoxy group and the hydroxy group are contained in a molar ratio of 0(Epoxy group)/(Hydroxy group)0.5 and the partial structure (II) is contained in a molar ratio of 0.01(Partial structure (II))/(Partial structure (I)+Partial structure (II))0.8.