Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-containing film has a content of germanium element of 20 atm % or more, or a total content of tin element, indium element, and gallium element of 1 atm % or more, as measured by X-ray photoelectric spectroscopy, and an application of the semiconductor intermediate.

A process of structuring a diamond substrate, comprising the steps of (a) depositing an adhesion layer on a face of the diamond substrate; (b) coating a resist layer on the adhesion layer; (c) removing parts of the resist layer so as to expose parts of the adhesion layer and form a corresponding structuring mask; (d) etching the adhesion layer and the diamond substrate (2) through the structuring mask so as to structure the diamond substrate; wherein the adhesion layer is a non-metallic compound comprising oxides.

A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): ##STR00001##
where R.sup.1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R.sup.2, R.sup.3 each represent the R.sup.1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

A photosensitive resin composition includes a siloxane resin (A), particles (B) having a median diameter of 0.2 to 0.6 μm, and a naphthoquinone diazide compound (C), wherein the siloxane resin (A) contains at least 20 to 60 mol % in total of a repeating unit represented by general formula (1):

##STR00001##

wherein R.sup.1 represents an aryl group having 6 to 18 carbon atoms or an aryl group having 6 to 18 carbon atoms in which all or part of hydrogen is substituted.

A composition for flattening uneven substrates. The composition for flattening uneven substrates, which is applied on an organic pattern, includes a solvent and a polysiloxane including a hydrolysis condensate of a hydrolyzable silane, wherein the polysiloxane includes silanol groups in a proportion of 20 mol % or less with respect to Si atoms, and the weight-average molecular weight of the polysiloxane is 1,000-50,000.

Proposed is a photosensitive resin composition including a siloxane copolymer having both a thermosetting functional group and a photocurable functional group. The composition, according to this disclosure, is capable of both thermal curing and photo-curing and thus can form a stable cured film in a flexible display process where a low-temperature process of 150° C. or less is essential.

A method for producing an optical waveguide by: (a) depositing a first composition: (i) a polysiloxane comprising epoxy and alkenyl groups with refractive index no greater than 1.50, (ii) a compound comprising at least one epoxy group and refractive index no greater than 1.49, and (iii) a polysiloxane having refractive index at least 1.50; (iv) a photo acid generator; (v) a hydrosilylation catalyst, (vi) an inhibitor for hydrosilylation; (b) curing by exposure to ultraviolet light; (c) removing the uncured portion to produce a patterned core layer; (d) after a time from 20 to 300 hours depositing a second composition comprising: (i) a polysiloxane comprising epoxy groups with refractive index no greater than 1.49, and (ii) a compound comprising at least two epoxy groups with a refractive index no greater than 1.49 and an alcohol having refractive index no more than 1.45 (iii) at least one photo acid generator.

A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

A compound of Formula (5-1) or Formula (5-3):

##STR00001##

where R.sup.17 and R.sup.21 are each an ethyl group; R.sup.22 and R.sup.23 are each a methyl group; and R.sup.16 and R.sup.20 are each a methoxy group.

A compound of Formula (5-1) or Formula (5-3):

##STR00001##

where R.sup.17 and R.sup.21 are each an ethyl group; R.sup.22 and R.sup.23 are each a methyl group; and R.sup.16 and R.sup.20 are each a methoxy group.