Patent classifications
G11C11/44
TLS-BASED OPTIMIZATION OF STARK TONE TUNING
Systems and techniques that facilitate TLS-based optimization of Stark tone tuning are provided. In various embodiments, a system can comprise a receiver component that can access a qubit topology. In various aspects, the system can further comprise an optimization component that can identify, based on a set of two-level-system, (TLS) frequency regions of the qubit topology, one or more Stark tone frequencies. In various instances, the system can further comprise an execution component that can apply, to a qubit lattice corresponding to the qubit topology, one or more Stark tones that have the one or more Stark tone frequencies, thereby eliminating frequency collisions in the qubit lattice.
Superconducting devices with ferromagnetic barrier junctions
A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.
Superconducting devices with ferromagnetic barrier junctions
A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.
Superconducting computing system in a liquid hydrogen environment
Superconducting computing system housed in a liquid hydrogen environment and related aspects are described. An example superconducting computing system includes a housing, arranged inside a liquid hydrogen environment, where a lower pressure is maintained inside the housing than a pressure outside the housing. The superconducting computing system further includes a substrate, arranged inside the housing, having a surface, where a plurality of components attached to the surface is configured to provide at least one of a computing or a storage functionality, and the substrate further comprises a plurality of circuit traces for interconnecting at least a subset of the plurality of the components. The housing is configured such that each of the plurality of components is configured to operate at a first temperature, where the first temperature is below 4.2 Kelvin, despite the liquid hydrogen environment having a second temperature greater than 4.2 Kelvin.
Superconducting gate memory circuit
One embodiment includes a superconducting gate memory circuit. The circuit includes a Josephson D-gate circuit configured to set a digital state as one of a first data state and a second data state in response to a write enable single flux quantum (SFQ) pulse provided on a write enable input and a respective presence of or absence of a write data SFQ pulse provided on a data write input. The circuit also includes a storage loop coupled to the Josephson D-gate. The storage loop can be configured to store the digital state and to readout the digital state at an output in response to a read enable SFQ pulse provided on a read enable input and a read data SFQ pulse provided on a read data input.
Superconducting gate memory circuit
One embodiment includes a superconducting gate memory circuit. The circuit includes a Josephson D-gate circuit configured to set a digital state as one of a first data state and a second data state in response to a write enable single flux quantum (SFQ) pulse provided on a write enable input and a respective presence of or absence of a write data SFQ pulse provided on a data write input. The circuit also includes a storage loop coupled to the Josephson D-gate. The storage loop can be configured to store the digital state and to readout the digital state at an output in response to a read enable SFQ pulse provided on a read enable input and a read data SFQ pulse provided on a read data input.
Superconductive Memory Cells and Devices
An electronic device (e.g., a superconducting memory cell) includes a substrate and a layer of superconducting material disposed over the substrate. The layer of superconducting material is patterned to form a plurality of distinct instances of the layer of superconducting material including: a first wire; and a loop that is (i) distinct and separate from the first wire and (ii) capacitively coupled to the first wire while the loop and the first wire are in a superconducting state. The loop is configured to form a persistent current via the capacitive coupling in response to a write current applied to the first wire while the loop and the first wire are in the superconducting state. The persistent current represents a logic state of the electronic device.
Superconductive Memory Cells and Devices
An electronic device (e.g., a superconducting memory cell) includes a substrate and a layer of superconducting material disposed over the substrate. The layer of superconducting material is patterned to form a plurality of distinct instances of the layer of superconducting material including: a first wire; and a loop that is (i) distinct and separate from the first wire and (ii) capacitively coupled to the first wire while the loop and the first wire are in a superconducting state. The loop is configured to form a persistent current via the capacitive coupling in response to a write current applied to the first wire while the loop and the first wire are in the superconducting state. The persistent current represents a logic state of the electronic device.
Scheduling of tasks for execution in parallel based on geometric reach
Systems and methods related to scheduling of tasks for execution in parallel based on geometric reach are described. An example method includes using a processor, processing information pertaining to a type of task to generate a plurality of areas of reach, where each of the plurality of areas of reach corresponds to a portion of a shared space. The method further includes using the processor, generating a plurality of inflated areas of reach by inflating each of the plurality of areas of reach based on a task-specific factor pertinent to the type of task. The method further includes automatically scheduling parallel execution of tasks associated with any of the plurality of inflated areas of reach satisfying a spatial constraint.
Scheduling of tasks for execution in parallel based on geometric reach
Systems and methods related to scheduling of tasks for execution in parallel based on geometric reach are described. An example method includes using a processor, processing information pertaining to a type of task to generate a plurality of areas of reach, where each of the plurality of areas of reach corresponds to a portion of a shared space. The method further includes using the processor, generating a plurality of inflated areas of reach by inflating each of the plurality of areas of reach based on a task-specific factor pertinent to the type of task. The method further includes automatically scheduling parallel execution of tasks associated with any of the plurality of inflated areas of reach satisfying a spatial constraint.