A computing system includes: a memory device including a memory cells; a memory controller configured to control the memory device; and a host configured to detect an occurrence of an error in a first memory cell of the memory device while performing an operation corresponding to a workload and transmit, to the memory controller, a target address corresponding to the first memory cell and a request for a test operation on adjacent memory cells that are adjacent to the first memory cell. The memory controller controls the memory device to perform the test operation on the adjacent memory cells by using at least one of a Built-In Self-Test (BIST) engine or a scrub engine based on the target address and generate memory error information including information associated with a second memory cell in which the error occurs, the second memory cell being one of the adjacent memory cells. The host controls an access to the second memory cell based on the memory error information.

Methods, systems, and devices for life expectancy monitoring for memory devices are described. Some memory devices may degrade over time, and this degradation may include or refer to a reduction of an ability of the memory device to reliably store, read, process, or communicate information, among other degradation. In accordance with examples as disclosed herein, a system may include components configured for monitoring health or life expectancy of the memory device, such as components that perform comparisons between signals or other operating characteristics resulting from operating at the memory device and one or more threshold values that may be indicative of a life expectancy of the memory device. In various examples, a memory device may perform a subsequent operation based on such a comparison, or may provide an indication of a life expectancy to a host device based on one or more comparisons or determinations about health or life expectancy.

The present technology relates to a memory system and a method of operating the same. The memory system includes a memory device including a plurality of semiconductor memories, and a controller configured to control the memory device to select a victim block based on a fail bit number of some data, among data that is programmed in each of the plurality of semiconductor memories, corresponding to a specific program state, and configured to perform a garbage collection operation on the selected victim blocks.

Methods, systems, and devices for activity-based data protection in a memory device are described. In one example, a memory device may include a set memory sections each having memory cells configured to be selectively coupled with access lines of the respective memory section. A method of operating the memory device may include determining a quantity of access operations performed on a set of sections of a memory device, selecting at least one of the sections for a voltage adjustment operation based on the determined quantity of access operations, and performing the voltage adjustment operation on the selected section. The voltage adjustment operation may include applying an equal voltage to opposite terminals of the memory cells, which may allow built-up charge, such as leakage charge accumulating from access operations of the selected memory section, to dissipate from the memory cells of the selected section.

Apparatus and methods are provided for operating a non-volatile memory module. In an example, a method can include filling a first plurality of pages of a first non-volatile memory with first data from a first data lane that includes a first volatile memory device, and filling a second plurality of pages of the first non-volatile memory device with second data from a second data lane that includes a second volatile memory device. In certain examples, the first plurality of pages does not include data from the second data lane.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device are disclosed in the present application. An example apparatus includes a register configured to store impedance calibration information and further includes programmable termination resistances having a programmable impedance. The example apparatus further includes an impedance calibration circuit configured to perform a calibration operation to determine calibration parameters for setting the programmable impedance of the programmable termination resistances. The impedance calibration circuit is further configured to program the impedance calibration information in the register related to the calibration operation.

A memory device of one embodiment includes memory elements which store data and parity; a first decoder which, when scrubbing of the data is performed while no external access is being made to the memory device, uses a syndrome generated from the data and the parity to correct an error of a maximum of N bits in a unit of the data; and a second decoder which, when reading of the data is performed, uses the syndrome to correct an error of a maximum of M bits in a unit of the data. The N bits represent the number of bits smaller than the N bits.

In some examples, a memory module includes an error status indicator, an error address register, and error tracking circuitry. The error tracking circuitry may detect that memory data stored at a memory address for the memory module includes an error. In response, and without overwriting the memory data stored at the memory address, the error tracking circuitry may set the error status indicator and store the memory address in the error address register.

A semiconductor device that has a normal mode of operation and a test mode of operation and can include: a first circuit that generates at least one assist signal having an assist enable logic level in the normal mode of operation, the at least one assist signal alters a read operation or a write operation to a static random access memory (SRAM) cell of the semiconductor device as compared to read or write operations when the assist signal has an assist disable logic level; and the first circuit generates the at least one assist signal having the assist disable logic level in the test mode of operation

One example of erasure-assisted error correction code (ECC) decoding can include reading a codeword with a first trim level, reading the codeword with a second trim level, and reading the codeword with a third trim level. A first result from reading the codeword with the first trim level, a second result from reading the codeword with the second trim level, and a third result from reading the codeword with the third trim level can be accumulated. An erasure of a detected unit sequence can be computed. The detected unit sequence can be modified by changing a unit in a position of the detected unit sequence corresponding to a position of the erasure. The modified detected unit sequence can be ECC decoded.