Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing a relative movement of the diffraction structure relative to the radiation beam from a first position, wherein the radiation beam does not irradiate the diffraction structure to a second position, wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from a diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining an intensity profile of the radiation beam based on the measured diffracted radiation signals.

An optical diffraction component has a periodic grating structure profile. The diffraction structure levels are arranged so that a wavelength range around two different target wavelengths diffracted by the grating structure profile has radiation components with three different phases that interfere destructively with one another. Diffraction structure levels predefine a topography of a grating period of the grating structure profile that is repeated regularly along a period running direction. These include a neutral diffraction structure level, a positive diffraction structure level raised relative thereto, and a negative diffraction structure level lowered relative thereto. The neutral diffraction structure level has an extent along the period running direction which is less than 50% of the extent of the grating period. A difference between the two target wavelengths is less than 50%. The result is an optical diffraction component whose possibilities for use can be extended, for example, to stray light suppression.

A high-pass x-ray filter device is disclosed that includes a substrate defining an elongated opening. A reflecting membrane is positioned across the opening and supported, along all sides, by the substrate. The reflecting membrane is configured to transmit, from an incident x-ray beam, x-ray photons having an energy above about a threshold energy level and reflects, from the incident x-ray beam, x-ray photons having an energy below about the threshold energy level. The elongated opening of the substrate defines an exit path for the transmitted x-ray beam. A high-pass x-ray filter system including the high-pass filter device and a method of fabrication of the high-pass filter device are also disclosed.

A process for manufacturing an optical element comprising a first step of spinning a circular sheet of a first metallic material for it to adhere to a rotating matrix and form a shell; a second step of assembling the shell on a temporary support; and at least a third step of diamond turning the shell by means of a diamond tool to obtain an optical surface.

A method for producing an optical element (2), in particular for a projection exposure system (400), according to which a protective layer (11) consisting of a protective material is applied to a surface of a main body (7) until a protective layer thickness is obtained. The main body (7) has a substrate (17) and a reflective layer (18) applied to the substrate (17). The protective layer (11) is at least substantially defect-free.

The substrate with a multilayer reflective film includes a substrate and the multilayer reflective film configured to reflect exposure light, the multilayer reflective film comprising a stack of alternating layers on a substrate, the alternating layers including a low refractive index layer and a high refractive index layer, in which the multilayer reflective film contains molybdenum (Mo) and at least one additive element selected from nitrogen (N), boron (B), carbon (C), zirconium (Zr), oxygen (O), hydrogen (H) and deuterium (D), and the crystallite size of the multilayer reflective film calculated from a diffraction peak of Mo (110) by X-ray diffraction is 2.5 nm or less.

Provided for herein are methods for producing reflective optical elements for the EUV wavelength range which have grating structures or which include structures that can serve as phase shifters. The methods may include the following operations: applying a structurable layer to a substrate, applying a reflective coating to the substrate that has been provided with the structurable layer, and locally irradiating the structurable layer. The structurable layer may be irradiated before or after application of the reflective coating.

A dispersive element is provided with a dispersive crystal for spectrally dispersing X-rays, a first support layer supporting the dispersive crystal, and a second support layer supporting the first support layer. The first support layer is greater in a thermal expansion coefficient than the dispersive crystal. The second support layer is smaller in a thermal expansion coefficient than the first support layer and is greater in rigidity than the first support layer.

The invention relates to a method of manufacturing a structured grating, a corresponding structured grating component (1) and an imaging system. The method comprising the steps of: providing (110, 120, 130) a catalyst (30) on a substrate (20), the catalyst (20) having a grating pattern; growing (140) nanostructures (50) on the catalyst (30) so as to form walls (52) and trenches (54) based on the grating pattern; and filling (160) the trenches (54) between the walls (52) of nanostructures (50) using an X-ray absorbing material (70). The invention provides an improved method for manufacturing a structured grating and such structured grating component (1), which is particularly suitable for dark-field X-ray imaging or phase-contrast imaging.

A mirror for a microlithographic projection exposure apparatus, and a method for operating a deformable mirror. In one aspect, a mirror includes an optical effective surface (11), a mirror substrate (12), a reflection layer stack (21) for reflecting electromagnetic radiation incident on the optical effective surface, and at least one piezoelectric layer (16) arranged between the mirror substrate and the reflection layer stack and to which an electric field for producing a locally variable deformation is able to be applied by a first electrode arrangement situated on the side of the piezoelectric layer (16) facing the reflection layer stack, and by a second electrode arrangement situated on the side of the piezoelectric layer facing the mirror substrate. The piezoelectric layer has a plurality of columns spatially separated from one another by column boundaries, wherein a mean column diameter of the columns is in the range of 0.1 μm to 50 μm.