There is provided a displacement measuring device that minimize unnecessary power consumption and improves power efficiency. A displacement measuring device includes a main scale and a detection head that is provided in such a manner as to be relatively displaceable to the main scale and outputs a periodic signal having a phase to be changed according to relative displacement to the main scale. The detection head outputs, as the periodic signal, a coarse scale signal having a coarse period and a fine scale signal having a fine period. A coarse phase detector calculates, from two pieces of phase information acquired from the coarse scale signal, the average phase of the coarse scale signal. A fine phase detector calculates, from four pieces of phase information acquired from the fine scale signal, the average phase of the fine scale signal. The coarse phase detector calculates the average phase of the coarse scale signal from the two pieces of phase information and, then, stops operating without the completion of the operation of the fine phase detector.

A semiconductor equipment architecture WGT for wafer shape and flatness measurement is disclosed. The semiconductor equipment architecture WGT includes a reflective air-bearing chuck and a hybrid wafer thickness gauge. Also disclosed are the corresponding methods of measuring wafer shape and flatness using the architecture, the air-bearing chuck and the hybrid wafer thickness gauge.

A capacitance sensor may be positioned to detect size changes in objects. The sensor may be constructed with to use mutual capacitance or self-capacitance to detect the size changes.

A device may include a flexible material defining an exterior of a cavity, an interior electrode located within the cavity, a first peripheral electrode peripherally located with respect to the interior electrode on a first side of the interior electrode, a second peripheral electrode peripherally located with respect to the interior electrode on a second side of the interior electrode where the interior electrode is between the first peripheral electrode and the second peripheral electrode, a controller electrically connected to the interior electrode, the first peripheral electrode, and the second peripheral electrode, and programmed instructions written into memory of the controller where the programmed instructions cause the controller, when executed to measure a first capacitance between the first peripheral electrode and the interior electrode and measure a second capacitance between the second peripheral electrode and the interior electrode.

A capacitance sensor may be positioned to detect size changes in objects. The sensor may be constructed with to use mutual capacitance or self-capacitance to detect the size changes.

A capacitance sensor may be positioned to detect size changes in objects. The sensor may be constructed with to use mutual capacitance or self-capacitance to detect the size changes.

Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

There is provided a displacement measuring device that minimize unnecessary power consumption and improves power efficiency.

A displacement measuring device includes a main scale and a detection head that is provided in such a manner as to be relatively displaceable to the main scale and outputs a periodic signal having a phase to be changed according to relative displacement to the main scale.

The detection head outputs, as the periodic signal, a coarse scale signal having a coarse period and a fine scale signal having a fine period. A coarse phase detector calculates, from two pieces of phase information acquired from the coarse scale signal, the average phase of the coarse scale signal. A fine phase detector calculates, from four pieces of phase information acquired from the fine scale signal, the average phase of the fine scale signal. The coarse phase detector calculates the average phase of the coarse scale signal from the two pieces of phase information and, then, stops operating without the completion of the operation of the fine phase detector.

Provided herein are systems, methods and apparatuses for a thickness measurement device based on a capacitive array.