A sensor device includes a detection electrode opposing an external electrode, and generating a voltage corresponding to a change in capacitance; a capacitive amplifier circuit having a first capacitor and a second capacitor, and configured to detect the voltage generated in the detection electrode, and output a detection signal obtained by amplifying the voltage generated in the detection electrode based on a capacitance ratio between the first capacitor and the second capacitor; a reset switch configured to reset the voltage of the detection electrode to a reference potential; a changeover switch configured to switch the capacitive amplifier circuit between a capacitive amplifier and a voltage follower; a second changeover switch configured to disconnect the first capacitor from the capacitive amplifier circuit; and a second reset switch configured to reset a voltage of the first capacitor to the reference potential.

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface, a second surface opposite the first surface, and an edge surface between the first surface and the second surface. In an embodiment, the sensor wafer further comprises a plurality of sensor regions formed along the edge surface, wherein each sensor region comprises a self-referencing capacitive sensor.

Described are test structures and methods for measuring silicon thickness in fully depleted silicon-on-insulator technologies.

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface, a second surface opposite the first surface, and an edge surface between the first surface and the second surface. In an embodiment, the sensor wafer further comprises a plurality of sensor regions formed along the edge surface, wherein each sensor region comprises a self-referencing capacitive sensor.

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface. In an embodiment, the sensor wafer further comprises a first conductive pad with a first surface area, wherein the first conductive pad has a surface that is substantially coplanar with the first surface of the substrate. In an embodiment, the sensor wafer further comprises a second conductive pad with a second surface area that is smaller than the first surface area, wherein the second conductive pad has a surface that is substantially coplanar with the first surface of the substrate.

A capacitive distance sensor includes a sensor element having an electrically conductive, elongated, flat sensor area which in turn contains a number of holes. The sensor area is completely surrounded by an electrically non-conductive insulating body, with the result that the insulating body completely covers the edge regions of the holes. The sensor element is produced, in particular, by first of all making the holes in the sensor area. In a subsequent step, the sensor area is completely encased by the insulating body which also completely fills the holes in the sensor area.

A vacuum pump includes: a rotating portion and a stator portion between which an internal flow path is formed; an exhaust mechanism which sends gas from a suction port toward an outlet port through the internal flow path; and a main sensor for detecting that a deposited material has reached a prescribed thickness at a detection object position of the internal flow path, wherein the main sensor includes at least a pair of electrodes disposed in the internal flow path at an interval corresponding to the prescribed thickness, and a capacitance detection circuit which is connected to the pair of electrodes and which detects a capacitance between the pair of electrodes, and the capacitance detection circuit detects that a deposited material in the internal flow path has reached the prescribed thickness on the basis of a drop in an increase rate of the capacitance.

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface. In an embodiment, the sensor wafer further comprises a first conductive pad with a first surface area, wherein the first conductive pad has a surface that is substantially coplanar with the first surface of the substrate. In an embodiment, the sensor wafer further comprises a second conductive pad with a second surface area that is smaller than the first surface area, wherein the second conductive pad has a surface that is substantially coplanar with the first surface of the substrate.

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface, a second surface opposite the first surface, and an edge surface between the first surface and the second surface. In an embodiment, the sensor wafer further comprises a plurality of sensor regions formed along the edge surface, wherein each sensor region comprises a self-referencing capacitive sensor.

Provided is a sensor sheet, a capacitive sensor, and a method for manufacturing sensor sheet with which it is possible to suppress changes in capacitance due to an arrangement state. This sensor sheet (1) includes a pair of electrode layers (1X-4X, 1Y-4Y), constraint layers (32, 42) that regulate the surface-direction expansion and contraction of the electrode layers (1X-4X, 1Y-4Y), a plurality of detection parts (A (1, 1)-A (4, 4)) disposed in portions where the pair of electrode layers (1X-4X, 1Y-4Y) is overlapped when viewed from the lamination direction, and non-detection parts (G) disposed between the plurality of detection parts (A (1, 1)-A (4, 4)). In a no-load state, the constraint layers (32, 42) are disposed in at least some of the plurality of detection parts (A (1, 1)-A (4, 4)), and gaps (g) are partitioned in at least some of the non-detection parts (G).