An electromagnetic wave sensor that limits the influence on bolometer membranes that is caused by heat from a local heat source is provided. Electromagnetic wave sensor has first substrate, second substrate that faces first substrate so as to form inner space between first substrate and second substrate, wherein second substrate transmits infrared rays; a plurality of bolometer membranes that is provided in inner space and that is supported by second substrate; local heat source that is formed in first substrate; first electric connection member that connects first substrate to second substrate; and lead that extends on or in second substrate and that connects first electric connection member to bolometer membrane.

A device may include a filter array disposed on a substrate. The filter array may include a first mirror disposed on the substrate. The filter array may include a plurality of spacers disposed on the first mirror. A first spacer, of the plurality of spacers, may be associated with a first thickness. A second spacer, of the plurality of spacers, may be associated with a second thickness that is different from the first thickness. A first channel corresponding to the first spacer and a second channel corresponding to the second spacer may be associated with a separation width of less than approximately 10 micrometers (μm). The filter array may include a second mirror disposed on the plurality of spacers.

The present publication describes a heat-resistant optical layered structure, a manufacturing method for a layered structure, and the use of a layered structure as a detector, emitter, and reflecting surface. The layered structure comprises a reflecting layer, an optical structure on top of the reflecting layer, and preferably shielding layers for shielding the reflecting layer and the optical structure. According to the invention, the optical structure on top of the reflecting layer comprises at least one partially transparent layer, which is optically fitted at a distance to the reflecting layer.

An apparatus for measuring surface temperature of a substrate being illuminated by a pulsed light beam configured to heat the substrate and by a beam of probing light, wherein the heated substrate emits a radiated beam of thermal radiation, wherein the apparatus includes an optical system configured to collect the radiated beam and a reflected beam of probing light propagating in substantially close directions, wherein the collected radiated beam and the collected reflected beam are separately routed to a respective detector via a respective routing element, the respective detectors being configured to measure the intensity of the collected radiated beam and collected reflected beam simultaneously and at the same wavelength, wherein the surface temperature is calculated based on the collected radiated beam and on the collected reflected beam.

An apparatus for measuring surface temperature of a substrate being illuminated by a pulsed light beam configured to heat the substrate and by a beam of probing light, wherein the heated substrate emits a radiated beam of thermal radiation, wherein the apparatus includes an optical system configured to collect the radiated beam and a reflected beam of probing light propagating in substantially close directions, wherein the collected radiated beam and the collected reflected beam are separately routed to a respective detector via a respective routing element, the respective detectors being configured to measure the intensity of the collected radiated beam and collected reflected beam simultaneously and at the same wavelength, wherein the surface temperature is calculated based on the collected radiated beam and on the collected reflected beam.

The present invention pertains to a device for measuring a temperature distribution, which can measure a temperature distribution without contacting a minor sample having a three-dimensional structure. More particularly, the device for measuring the temperature distribution can measure a three-dimensional temperature distribution for a sample, wherein the temperature distribution in a depth direction (direction z) of the sample is measured by a thermo-reflectance technique using a chromatic dispersion lens, a diffraction spectrometer and an optical detection array; and the temperature distribution in parallel directions (direction x-y axes) of the sample is measured by the thermo-reflectance technique using a biaxial scanning mirror.

Apparatus and methods are described for use with feces of a subject that are disposed within a toilet bowl, and an output device. One or more light sensors are configured to receive light from the toilet bowl, while the feces are disposed within the toilet bowl. A computer processor analyzes the received light, and, in response thereto, detects a currently-occurring inflammatory bowel disease episode, and/or a predicted upcoming inflammatory bowel disease episode. The computer processor generates an output on the output device, at least partially in response thereto. Other applications are also described.

A wafer-level integrated thermal detector comprises a first wafer and a second wafer (W1, W2) bonded together. The first wafer (W1) includes a dielectric or semiconducting substrate (100), a dielectric sacrificial layer (102) deposited on the substrate, a support layer (104) deposited on the sacrificial layer or the substrate, a suspended active element (108) provided within an opening (106) in the support layer, a first vacuum-sealed cavity (110) and a second vacuum-sealed cavity (106) on opposite sides of the suspended active element. The first vacuum-sealed cavity (110) extends into the sacrificial layer (102) at the location of the suspended active element (108). The second vacuum-sealed cavity (106) comprises the opening of the support layer (104) closed by the bonded second wafer. The thermal detector further comprises front optics (120) for entrance of radiation from outside into one of the first and second vacuum-sealed cavities, aback reflector (112) arranged to reflect radiation back into the other one of the first and second vacuum-sealed cavities, and electrical connections (114) for connecting the suspended active element to a readout circuit (118).

The invention relates to a method and to a device for the in-situ determination of the temperature ϑ of a sample, in particular to a method and to a device for the surface-corrected determination of the temperature ϑ of a sample by means of the band-edge method.

It is provided that, for the in-situ determination of the temperature ϑ of a sample (10) when growing a layer stack (12) in a deposition system, a surface-corrected transmission spectrum T′(λ) is calculated by determining the quotient of the transmission spectrum T(λ) and a correction function K(λ), the correction function K(λ) being calculated from a determined reflection spectrum R(λ). Subsequently, the spectral position of the band-edge λ.sub.BE is determined from the transmission spectrum T′(λ), and the temperature ϑ is determined from the spectral position of the band-edge λ.sub.BE by means of a known dependency ϑ(λ.sub.BE).

An infrared sensor module and a forehead thermometer are provided. The infrared sensor module includes a light guide structure and an infrared sensor element. An annular hollow space is formed inside the light guide structure and passes therethrough. A first and second opening is formed on two opposite sides of the light guide structure, respectively. A diameter of the first opening is greater than a diameter of the second opening. The annular hollow space includes a matte and reflective area, the matte area has serration portions, and each of the serration portions extends from the first opening to the second opening and is arranged parallel to each other. The reflective area is formed between the second opening and the matte area. The infrared sensor element is disposed at the second opening. The forehead thermometer includes a casing, a circuit board, the infrared sensor module, and an operating switch.