Electromagnetic metamaterial cells are described. An example of an electromagnetic metamaterial cell includes spatially separate absorptive features disposed in a planar rotationally symmetric arrangement. Each of the absorptive features may include a curvilinear segment that is convex relative to a center of symmetry of the arrangement. In some embodiments, each of the absorptive features includes one or more forks extending from the curvilinear segment. Each of the one or more forks may include a stem and at least two tines extending from the stem. The electromagnetic metamaterial cell may be included in a detector, such as a microbolometer, which itself may be included in a Fourier-transform infrared spectroscopy (FTIR) system. In some embodiments, the FTIR system may be used to characterize fluid in a wellbore. The fluid may be a drilling fluid or a downhole fluid, such as crude oil.

An infrared detector includes a thermoelectric element, an infrared light absorber located on the thermoelectric element, and an electrical signal detecting element. The infrared light absorber includes a first drawn carbon nanotube film, a second drawn carbon nanotube film, and a third drawn carbon nanotube film stacked on each other. The first drawn carbon nanotube film includes a plurality of first carbon nanotubes substantially extending along a first direction. The second drawn carbon nanotube film includes a plurality of second carbon nanotubes substantially extending along a second direction. The third drawn carbon nanotube film includes a plurality of third carbon nanotubes substantially extending along a third direction. The first direction and the second direction form an angle of about 42 degrees to about 48 degrees, and the first direction and the third direction form an angle of about 84 degrees to about 96 degrees.

Provided is an infrared detecting device with a high SNR. The infrared detecting device includes: a semiconductor substrate 10; a first layer 21 having a first conductivity type on the semiconductor substrate; a light receiving layer 22 on the first layer; and a second layer 23 having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure, the light receiving layer contains Al.sub.xIn.sub.1-xSb (0.05<x<0.18), and at least a part of side surfaces of the mesa structure are covered with a protective layer, and part of the protective layer that is in contact with side surfaces of the light receiving layer is made of silicon nitride.

A light converting optical system employing a planar light trapping optical structure illuminated by a source of monochromatic light. The light trapping optical structure includes a photoabsorptive layer including quantum dots. The photoabsorptive layer is configured at a relatively low thickness and located between a broad-area optically transmissive surface configured to reflect light using a total internal reflection and an opposing broad-area reflective surface formed by a thin sheet of material configured to diffusely reflect light. The opposing surfaces confine and redistribute light within the light trapping structure, causing multiple transverse propagation of light through the photoabsorptive layer and enhanced absorption and light conversion. The light trapping optical structure may further incorporate an array of lenses or other optical elements located on a light path between the light source and the photoabsorptive layer.

An imaging device includes a first structure 20, and a second structure 40, in which the first structure 20 includes a first substrate 21, a temperature detection element which is formed on the first substrate 21 and detects a temperature on the basis of an infrared ray, a signal line 71, and a drive line 72, the second structure 40 includes a second substrate 41, and a drive circuit provided on the second substrate 41 and covered with a covering layer 43, the first substrate 21 and a second electrode 41 are stacked, the signal line 71 is electrically connected with the drive circuit via a signal line connection portion 100, the drive line is electrically connected with the drive circuit via a drive line connection portion, and the signal line connection portion 100 includes a first signal line connection portion 102 formed in the first structure 20 and a second signal line connection portion 106 formed in the second structure 40.

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.

An infrared radiation sensor comprises a substrate, a membrane formed in or at the substrate, a first counter electrode, a second counter electrode, and a composite comprising at least two layers of materials having different coefficients of thermal expansion. At least a portion of the membrane forms a deflectable electrode and the deflectable electrode is electrically floating. A first capacitance is formed between the deflectable electrode and the first counter electrode, and a second capacitance is formed between the deflectable electrode and the second counter electrode. The membrane comprises the composite or is supported at the substrate by the composite. The membrane comprises an absorption region configured to cause deformation of the composite by absorbing infrared radiation, the deformation resulting in a deflection of the deflectable electrode, which causes a change of the first and second capacitances.

High speed and spectrally selective pyroelectric detectors with plasmonic structure and methods of making and using same are disclosed. According to an aspect, a pyroelectric detector includes an artificial optical absorber or plasmonic absorber comprising an ensemble of subwavelength conductive components forming a plasmonic structure configured to receive light and to generate thermal energy from the received light. Further, the pyroelectric detector includes a pyroelectric material configured to receive the generated thermal energy from the plasmonic structure and to generate an electrical signal representative of the received thermal energy. Further, the pyroelectric detector includes an electronic component configured to receive the electrical signal from the pyroelectric material for detection of the received light.

Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.

Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.