A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.

Imaging devices including dielectric metamaterial absorbers and related methods are disclosed. According to an aspect, an imaging device includes a support. The imaging device also includes multiple dielectric metamaterial absorbers attached to the support. Each absorber includes one or more dielectric resonators configured to generate and emit thermal heat upon receipt of electromagnetic energy.

Systems, methods, and apparatuses for providing on-board electromagnetic radiation sensing using beam splitting in a radiation sensing apparatus. The radiation sensing apparatuses can include a micro-mirror chip including a plurality of light reflecting surfaces. The apparatuses can also include an image sensor including an imaging surface. The apparatuses can also include a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit can include a beamsplitter that includes a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip. The apparatuses can also include an enclosure configured to enclose at least the beamsplitter and a light source. With the apparatuses, the light source can be attached to a printed circuit board (PCB). Also, the enclosure can include an inner surface that has an angled reflective surface that is configured to reflect light from the light source in a direction towards the beamsplitter.

A method for manufacturing a near-infrared sensor cover includes a film setting step. The film setting step includes setting a heater film on a first molding die and setting a hard coating film on a second molding die. The method for manufacturing a near-infrared sensor cover further includes a base molding step for molding a base including clamping a mold, injecting molten plastic into a gap between the heater film and the hard coating film, and curing the molten plastic.

A recessed carbon nanotube article includes a base; a substrate disposed on the base; wells disposed in the substrate and bounded by the base and a substrate wall; and a carbon nanotube element disposed in individual wells and including vertically aligned carbon nanotubes such that a longitudinal length of the vertically aligned carbon nanotubes is less than a depth of the well in which the carbon nanotube element is disposed. A recessed carbon nanotube bolometer includes a base; a substrate on the base; radiation wells in the substrate; carbon nanotubes in the wells; thermistors and heaters on the membrane arranged as an electrical substitution member. A process for making a recessed carbon nanotube bolometer includes forming a substrate on a base; forming a radiation well in the substrate; forming carbon nanotubes in the well; disposing a cover on the wells; and forming a thermistor and a heater on the base.

The present invention relates to an integrated reflective backshort fabricated with a phononic-isolated kinetic inductance detector or transition edge sensor. The integrated backshort includes: a silicon wafer; a reflective metal layer bonded to the silicon wafer; a silicon first layer disposed on the reflective metal layer; a structural second layer disposed on the first layer; a first superconductor layer disposed on the second layer as a kinetic inductance detector; and a second superconductor layer disposed on the second layer as leads, a microstrip, a capacitor or filter; wherein a phononic structure is etched in the second layer, leaving holes in the second layer; and wherein the etching penetrates through the holes into the second layer, and stopping on the reflective metal layer, leaving a space under the second layer where edges of the first layer etched under the second layer define a length of the integrated backshort.

Disclosed is a plurality of metal chalcogenide nanocrystals coated with multiple organic and inorganic ligands; wherein the metal is selected from Hg, Pb, Sn, Cd, Bi, Sb or a mixture thereof; and the chalcogen is selected from S, Se, Te or a mixture thereof; wherein the multiple inorganic ligands includes at least one inorganic ligands are selected from S.sup.2, HS.sup., Se.sup.2, Te.sup.2, OH.sup., BF.sub.4.sup., PF.sub.6.sup., Cl.sup., Br.sup., I.sup., As.sub.2Se.sub.3, Sb.sub.2S.sub.3, Sb.sub.2Te.sub.3, Sb.sub.2Se.sub.3, As.sub.2S.sub.3 or a mixture thereof; and wherein the absorption of the CH bonds of the organic ligands relative to the absorption of metal chalcogenide nanocrystals is lower than 50%, preferably lower than 20%.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

Radiation detecting and sensing systems using graphene and methods of making the same are provided; including a substrate, a single or multiple layers of graphene nanoribbons, first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance, increasing sensitivity to IR radiation. Absorption over a wide wavelength range (200 nm to 1 mm) is possible based on the three alternative devices structures described within. Devices can variously include (a) a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules, (b) graphene layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector, and/or (c) tuned graphene layers layered on top of each other where a p-type layer and a n-type layer is created using a combination of oxidation and doping.

A breathing apparatus includes a tube having a proximal end connected to a breathing mask and a distal end connected to a splitter. A first branch has a proximal end connected to the splitter and an open distal end. A first sensor is arranged within the first branch and operatively connected to a processing module. A first flow control valve is arranged in the first branch and operatively connected to the processing module. A second branch has a proximal end connected to the splitter and a distal end connected to an inflatable reservoir. A second sensor is arranged within the second branch and operatively connected to a processing module. A second flow control valve arranged in the second branch and operatively connected to the processing module. The breathing apparatus can adjust a pneumatic resistance according to a programmed training protocol and counteract hyperventilation by recirculating exhaled air.