A method for processing a raw image characterized by first Pix.sub.1(i,j) and second Pix.sub.2(i,j) raw measurements collected by first Bol.sub.1(i,j) and second Bol.sub.2(i,j) bolometers of a set of bolometers Bol(i,j) of a detector, the first bolometers Bol.sub.1(i,j) being closed off, the method being executed by a computer on the basis of reference measurements Pix.sub.REF(i,j) that include first Pix.sub.1REF(i,j) and second Pix.sub.2REF(i,j) reference measurements associated with the first Bol.sub.1(i,j) and with the second Bol.sub.2(i,j) bolometers, the method including: a) a correlation step between the first raw measurements Pix.sub.1(i,j) and the first reference measurements Pix.sub.1REF(i,j); and b) a step of correcting the raw image, which includes computing corrected measurements Pix.sub.Cor(i,j) of a corrected image for each bolometer Bol(i,j) on the basis of the reference measurements Pix.sub.REF(i,j) and of the result of step a).

A method for processing a raw image characterized by first Pix.sub.1(i,j) and second Pix.sub.2(i,j) raw measurements collected by first Bol.sub.1(i,j) and second Bol.sub.2(i,j) bolometers of a set of bolometers Bol(i,j) of a detector, the first bolometers Bol.sub.1(i,j) being closed off, the method being executed by a computer on the basis of reference measurements Pix.sub.REF(i,j) that include first Pix.sub.1REF(i,j) and second Pix.sub.2REF(i,j) reference measurements associated with the first Bol.sub.1(i,j) and with the second Bol.sub.2(i,j) bolometers, the method including: a) a correlation step between the first raw measurements Pix.sub.1(i,j) and the first reference measurements Pix.sub.1REF(i,j); and b) a step of correcting the raw image, which includes computing corrected measurements Pix.sub.Cor(i,j) of a corrected image for each bolometer Bol(i,j) on the basis of the reference measurements Pix.sub.REF(i,j) and of the result of step a).

A method of manufacturing an infrared detector includes the steps of: hybrid bonding of a detection chip to a second chip; said hybrid bonding step being carried out by adhesion of contacts and of insulator layers of the two chips; removal of a substrate of said detection chip to reach a deep oxide layer; forming of conductive pads through said deep oxide layer to reach transistors present in a semiconductor layer; and forming of microbolometers suspended over said deep oxide layer and electrically connected to the conductive pads.

A method of manufacturing an infrared detector includes the steps of: hybrid bonding of a detection chip to a second chip; said hybrid bonding step being carried out by adhesion of contacts and of insulator layers of the two chips; removal of a substrate of said detection chip to reach a deep oxide layer; forming of conductive pads through said deep oxide layer to reach transistors present in a semiconductor layer; and forming of microbolometers suspended over said deep oxide layer and electrically connected to the conductive pads.

A pixel for an image sensor includes a resistive microbolometer sensor portion, a visible image sensor portion, and an output path. The resistive microbolometer sensor portion outputs a signal corresponding to an infrared (IR) image sensed by the resistive microbolometer sensor portion. The resistive microbolometer sensor portion uses no bias current. The visible image sensor portion outputs a signal corresponding to a visible image sensed by the visible image sensor portion. The output path is shared by the resistive microbolometer sensor portion and the visible image sensor portion, and may be controlled to selectively output the signal corresponding to the IR image, the signal corresponding to the visible image, or a fused image based on the IR image and the visible image. The resistive microbolometer sensor portion may sense a near infrared image or a longwave infrared image.

A pixel for an image sensor includes a resistive microbolometer sensor portion, a visible image sensor portion, and an output path. The resistive microbolometer sensor portion outputs a signal corresponding to an infrared (IR) image sensed by the resistive microbolometer sensor portion. The resistive microbolometer sensor portion uses no bias current. The visible image sensor portion outputs a signal corresponding to a visible image sensed by the visible image sensor portion. The output path is shared by the resistive microbolometer sensor portion and the visible image sensor portion, and may be controlled to selectively output the signal corresponding to the IR image, the signal corresponding to the visible image, or a fused image based on the IR image and the visible image. The resistive microbolometer sensor portion may sense a near infrared image or a longwave infrared image.

Provided is a thermal infrared detector including a thermal infrared sensor array including a plurality of resistive infrared devices that are provided in a plurality of rows and a plurality of columns, and a driving circuit configured to drive the thermal infrared sensor array, wherein at least two resistive infrared devices among the plurality of resistive infrared devices adjacent to each other in a row direction or a column direction are grouped together, wherein at least one resistive infrared device among the plurality of resistive infrared devices is shared by at least two groups, and wherein at least two resistive infrared devices among the plurality of resistive infrared devices that are included in each of the at least two groups are connected in series.

A system with a detector array, a processor unit and a signal interface. The detector array includes a plurality of bolometric measuring cells and a base body. Each measuring cell is configured to detect infrared radiation and to transmit a measurement signal, which is representative of the readings of the measuring cells, to the processor unit. The processor unit is configured to determine a body heat stored by the base body, to determine a predictive value compensated according to the time delay of the respective measuring cell for each current reading, to determine a temperature value corrected according to the measurement error for each current predictive value, and to determine a thermal image based on the current temperature values, allowing an image signal representing the thermal image to be sent from the signal interface. A corresponding method is also provided.

A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.

A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.