Aspects of the invention are directed towards a system and a method for sensing temperature of an item and displaying temperature thereof. One or more embodiments of the invention describe the method comprising steps of sensing, by a metal crimp coupled with a sensor, a temperature of content inside an item and determine a value of the temperature. The method further describes step of displaying an indication of the temperature value on an electrochromic strip coupled with the sensor.

An electronic device includes: a base substrate including an active region, which includes a sensing region, and a peripheral region adjacent to the active region; an input sensor including a sensing insulating layer, a plurality of first sensing electrodes, a plurality of second sensing electrodes, the second sensing electrodes being spaced apart from the first sensing electrodes; and a pressure sensor including a plurality of strain sensing patterns overlapping the sensing region, and strain connection patterns connecting the strain sensing patterns to each other, wherein each of the first sensing electrodes comprises a plurality of first sensing patterns overlapping the active region, each of the second sensing electrodes comprises a plurality of second sensing patterns overlapping the active region and on a same layer as the first sensing patterns, and a plurality of second connection patterns connecting the second sensing patterns.

A temperature sensor element has such a structure as, when reinforcing lead wires on internal electrodes with a paste, one side surface of each of the lead wires is covered with a reinforcement paste and the other side surface is not covered with the reinforcement paste without covering the entire lead wires welded and connected to the internal electrodes. This allows elimination of cause of cracks generating, thereby securing sufficient joining strength and reinforcement of conductivity of the internal electrodes and the lead wires, and securing connection strength between the lead wires and the internal electrodes.

A method for determining the temperature characteristic of the drain-source on-state resistance of a MOSFET of a first type. The method includes: determining temperature-specific linearization coefficients of a difference between a first value of the drain-source on-state resistance at a first temperature and a second value of the drain-source on-state resistance at a reference temperature established for the MOSFET-type characterization based on a difference between a first value of the drain-source on-state resistance at the same reference temperature and the average of the drain-source on-state resistance at the same reference temperature from measurements during production for MOSFET samples of the first type; determining the temperature dependency of the determined temperature-specific linearization coefficients to determine a specific TDDR for the characterized MOSFET samples of the first type; and using the MOSFET-type-specific TDDR to reconstruct the temperature dependency of the drain-source on-state resistance of an individual MOSFET of the first type.

The invention concerns a device (1) for measuring at least one parameter of a motor vehicle, the device (1) comprising at least one reference resistor (R.sub.0) of a predetermined value and at least two measuring branches (K1, K2), each of the two measuring branches comprising at least a first element comprising a resistor (R.sub.0) or a resistive sensor (R.sub.2), capable of being connected to a voltage supply (Vcc), and a second element comprising a resistor or a resistive sensor (R.sub.1, R.sub.3) capable of being connected to earth (M), the first element and the second element being connected together at a mid-point (A, B), the mid-points (A, B) of the at least two measuring branches (K1, K2) being connected together in pairs by a third element comprising a resistor or a resistive sensor (R.sub.4).

A turbine temperature estimation system controls a valve in a cooling passage to control the flow rate of cooling air supplied to a turbine component on the basis of its temperature. The system includes a coating layer formed on a surface of a component of the gas turbine; a measuring unit to supply an electric current to the coating layer and to measure a change in a resistance value of the coating layer; and a controller to estimate a temperature of the coating layer on the basis of the resistance value. The coating layer includes a heat shielding material and a resistive material whose resistance value changes with temperature. A cooling passage supplies cooling air to cool the turbine component, and the controller controls an opening of the cooling passage according to a voltage value of the coating layer.

Heat resistant sensors equipped with any of a variety of transducers for measuring any of a variety of properties of fluids are constructed with components comprising materials that can withstand very high temperatures. Some embodiments of the sensors include a base comprising non-conductive ceramic material, and some embodiments of the transducers include conductive ceramic materials with resistivities that vary as a function of temperature. Some embodiments of the sensors also include electrical conductors comprising electrically conductive ceramic material or electrical conductors comprising an electrically conductive refractory metal on the base. Other embodiments of the transducers include a capacitor constructed of materials that can withstand very high temperatures.

Implementations described herein generally relate to semiconductor manufacturing, and more specifically to a temperature measurement device. In one implementation, the temperature measurement device includes a substrate and a stack of metal layers coupled to the substrate. Each metal layer of the stack of metal layers extends continuously uninterrupted from edge to edge of the substrate. The first metal layer has a lower electrical resistivity than the second metal layers. The electrical resistivity of the stack is based on the electrical resistivity of the first metal layer, which is temperature dependent. Utilizing a known relationship between temperature measurements and resistivity measurements, the temperature measurement device can measure and store temperature information in various substrate processing processes.

A resistor network with reduced area and/or improved voltage resolution and methods of designing and operating the same are provided. Generally, the resistor network includes a resistor ladder with a first number (n) of integrated resistors coupled in series between a top and a bottom contact, with one or more contacts coupled between adjacent resistors. A second number of integrated resistors is coupled in parallel between the top and bottom contacts, and a third number of integrated resistors is coupled in series between the second integrated resistors and either the top or the bottom contact. Each of the integrated resistors has a resistance of R, and a voltage developed across each resistor in the resistor ladder is equal to a voltage applied between the top and bottom contacts divided by n. Where the second number is n-1, and the third number is 1, the total number of resistors is 2n.

A temperature sensor includes an insulating substrate made of ceramics and having a first surface and a second surface an electrode including a cathode electrode and an anode electrode, which are disposed on the first surface of the insulating substrate; a resistance wire portion including one or more resistance wires inside the insulating substrate, a cathode end portion of the resistance wire portion being electrically connected to the cathode electrode, and an anode end portion of the resistance wire portion electrically connected to the anode electrode; and one or more metal layers connected to a portion in a path through which current flows between the cathode electrode and the anode electrode, and the portion having a potential identical with or lower than that of the resistance wire portion.