A sensor chip includes multiple sensing blocks each of which includes two or more T-patterned beam structures. Each T-patterned beam structure includes strain-detecting elements, at least one first detection beam, and a second detection beam extending from the first detection beam in a direction perpendicular to the first detection beam. Each T-patterned beam structure includes a connection portion formed by coupling ends of second detection beams in respective T-patterned structures, the connection portion including a force point portion. The sensor chip is configured to detect up to six axes relating to predetermined axial forces or moments around the predetermined axes, based on a change in an output of each of the strain-detecting elements, the output of each strain-detecting element changing in accordance with an input applied to a given force point portion.

A sensor chip includes multiple sensing blocks each of which includes two or more T-patterned beam structures. Each T-patterned beam structure includes strain-detecting elements, at least one first detection beam, and a second detection beam extending from the first detection beam in a direction perpendicular to the first detection beam. Each T-patterned beam structure includes a connection portion formed by coupling ends of second detection beams in respective T-patterned structures, the connection portion including a force point portion. The sensor chip is configured to detect up to six axes relating to predetermined axial forces or moments around the predetermined axes, based on a change in an output of each of the strain-detecting elements, the output of each strain-detecting element changing in accordance with an input applied to a given force point portion.

A strain inducing body includes a strain inducing portion. The strain inducing portion includes a movable portion configured to receive a force in a predetermined axial direction or a moment about the predetermined axial direction and to deform in accordance with the received force or moment. The strain inducing portion includes a non-movable portion configured to receive the force or moment and to not deform in accordance with the received force or moment. The strain inducing body includes an input transmitter coupled to the non-movable portion and including an accommodating portion for accommodating a sensor chip detects the force or moment. The input transmitter receives the force or moment and to not deform in accordance with the received force or moment. The input transmitter transmits deformation of the strain inducing portion to the sensor chip.

A force sensor includes at least one cavity defining at least two surfaces having different orientations. On each of said surfaces is disposed at least one respective detection structure sensitive to a pressure exerted on the corresponding surface. A resiliently deformable medium at least partially fills the cavity by coming into contact with the surfaces and defines a detection surface, on which a force to be detected is likely to be exerted. The application of this force is likely to generate stresses on each detection structure due to the transmission of forces by the medium.

A two-dimensional force sensor for measuring a first force (F.sub.X) in a first direction (X) and a second force (Fy) in a second direction (Y) different from the first direction (X). The two-dimensional force sensor comprises a first resilient plate (H1) oriented in the second direction (Y), a first end of the first resilient plate (H1) being arranged for being coupled to a reference point; a second resilient plate (H2) oriented in the first direction (X), a first end of the second resilient plate (H2) being coupled to a second end of the first resilient plate (H1); and a measurement probe (P) being coupled to a second end of the second resilient plate (H2). Advantageously, the measurement probe (P) is mounted on an extension device (A) mounted to the second end of the second resilient plate (H2), the extension device (A) being arranged for positioning the measurement probe (P) at a position deviating from an imaginary cross-section point of the first resilient plate (H1) and the second resilient plate (H2) by no more than 20%, preferably 10%, and more preferably 5%, of a length of the extension device.

Techniques relating to a micro-electro-mechanical (MEMS) device configured to measure direct axial and shear stress components of a stress tensor are described. The MEMS device includes a first and second circuit configured in a double rosette structure coupled with a third circuit in a standard rosette structure to form a triple rosette piezo-resistive gauge circuit. The first circuit includes at least one piezoresistive element suspended from a substrate, and at least one piezoresistive element fixed to the substrate. The second circuit includes each piezoresistive element fixed to the substrate. The third circuit includes at least one piezoresistive element fixed to the substrate. Additionally, the MEMS device may be coupled to one or more processing systems to determine a mechanical stress tensor that is applied to the MEMS device based on measurements received from the MEMS device.

Techniques relating to a micro-electro-mechanical (MEMS) device configured to measure direct axial and shear stress components of a stress tensor are described. The MEMS device includes a first and second circuit configured in a double rosette structure coupled with a third circuit in a standard rosette structure to form a triple rosette piezo-resistive gauge circuit. The first circuit includes at least one piezoresistive element suspended from a substrate, and at least one piezoresistive element fixed to the substrate. The second circuit includes each piezoresistive element fixed to the substrate. The third circuit includes at least one piezoresistive element fixed to the substrate. Additionally, the MEMS device may be coupled to one or more processing systems to determine a mechanical stress tensor that is applied to the MEMS device based on measurements received from the MEMS device.

A sensor device includes a piezoresistive element that is formed in a semiconductor substrate and has a polarity opposite to a polarity of the semiconductor substrate, diffusion wirings that are formed in the semiconductor substrate and have a polarity opposite to the polarity of the semiconductor substrate, a first barrier layer formed between the adjacent diffusion wirings in the semiconductor substrate and has a same polarity as the polarity of the semiconductor substrate, and a second barrier layer that is formed on surface layers of the piezoresistive element and the diffusion wirings and have a same polarity as the polarity of the first barrier layer.

A sensor device includes a piezoresistive element that is formed in a semiconductor substrate and has a polarity opposite to a polarity of the semiconductor substrate, diffusion wirings that are formed in the semiconductor substrate and have a polarity opposite to the polarity of the semiconductor substrate, a first barrier layer formed between the adjacent diffusion wirings in the semiconductor substrate and has a same polarity as the polarity of the semiconductor substrate, and a second barrier layer that is formed on surface layers of the piezoresistive element and the diffusion wirings and have a same polarity as the polarity of the first barrier layer.

A stress sensor includes: a substrate, having a face and a recess, open to the face; and a sensor chip of semiconductor material, housed in the recess and bonded to the substrate, the sensor chip being provided with a plurality of sensing components of piezoresistive material. The substrate has a thickness which is less by at least one order of magnitude with respect to a main dimension of the face. Further, the sensor chip has a thickness which is less by at least one order of magnitude with respect to the thickness of the substrate, and a Young's module of the substrate and a Young's module of the sensor chip are of the same order of magnitude.