Pressure sensors having ring-tensioned membranes are disclosed. A tensioning ring is bonded to a membrane in a manner that results in the tensioning ring applying a tensile force to the membrane, flattening the membrane and reducing or eliminating defects that may have occurred during production. The membrane is bonded to the sensor housing at a point outside the tensioning ring, preventing the process of bonding the membrane to the housing from introducing defects into the tensioned portion of the membrane. A dielectric may be introduced into the gap between the membrane and the counter electrode in a capacitive pressure sensor, resulting in an improved dynamic range.

A flow sensor comprises an electroactive material device. A driver controls the electroactive material device to deliver heat locally to the flowing medium for which the flow is to be sensed. Temperature sensing signals are obtained and these are used to derive a flow measurement. The way the heat is dissipated relates to the flow, and it is measurable based on the temperature sensing signals. The temperature sensing involves measuring an electrical characteristic which comprises an impedance or an impedance phase angle of the electroactive material device at at least a first frequency and at a second frequency different from the first frequency. The influences of temperature and pressure can in this way be decoupled so that the temperature can be measured at any pressure.

An electronic device includes a package substrate, a circuit assembly, and a housing. The circuit assembly is mounted on the package substrate. The circuit assembly includes a first sealed cavity formed in a device substrate. The housing is mounted on the package substrate to form a second sealed cavity about the circuit assembly.

The present invention provides a pressure transducer (1) and a method for fabricating a pressure transducer. The pressure transducer is for use in a gas pressure gauge and uses a squeeze-film. The pressure transducer comprises a first wafer (2) and a second wafer (3), wherein at least the first wafer comprises a device layer (2.1) and a handle layer (2.3); the second wafer (3) has a top and bottom surface; and wherein at least the device layer (2.1) of the first wafer (2) is structured. The pressure transducer further comprises a membrane (4.1), a cavity (5) between the membrane (4.1) and the second wafer (3), wherein the cavity (5) has a cavity bottom, an inlet (12) connecting the cavity (5) to a surrounding, a suspension (6) of the membrane (4.1), wherein the suspension (6) allows oscillation of the membrane (4.1), and an oscillation generator to set the membrane (4.1) in oscillation. The pressure transducer is characterized in that the structured device layer (2.1) of the first wafer (2) comprises the membrane (4.1) and suspension (6) of the membrane (4.1), in that the first wafer (2) is bonded to the top surface of the second wafer (3), and in that the handle layer (2.3) of the first wafer (2) is structured to release the suspension (6).)

In accordance with an embodiment, a MEMS sensor includes a membrane that is suspended from the substrate, a resonant frequency of said membrane being influenced by an ambient pressure that acts on the membrane; and an evaluation device configured to perform a first measurement based on the resonant frequency of the membrane to obtain a measurement result, where the evaluation device is configured to at least partly compensate an influence of the ambient pressure on the measurement result

This document discusses, among other things, an apparatus including a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port, a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion.

Arrays of resonator sensors include an active wafer array comprising a plurality of active wafers, a first end cap array coupled to a first side of the active wafer array, and a second end cap array coupled to a second side of the active wafer array. Thickness shear mode resonator sensors may include an active wafer coupled to a first end cap and a second end cap. Methods of forming a plurality of resonator sensors include forming a plurality of active wafer locations and separating the active wafer locations to form a plurality of discrete resonator sensors. Thickness shear mode resonator sensors may be produced by such methods.

A system to determine a temperature corrected pressure of a medium in a pressure transducer is disclosed. The system comprises a first circuitry to obtain a first value related to a vibration frequency of the vibration of a pressure sensitive vibration member; a second circuity to obtain a second value related to a vibration amplitude of the vibration of the vibration member; and a third circuity to use the first value and the second value to determine the temperature corrected pressure of the medium based on a predetermined relationship between the vibration frequency and the vibration amplitude.

A pressure sensor includes: a fixed part; a ring-like oscillator that is supported on the fixed part by a plurality of support beams; a plurality of electrodes that are provided on the fixed part and arranged in an oscillating direction of the ring-like oscillator with a gap; electret films that are formed on either one of opposite surfaces of the ring-like oscillator and the electrodes.

A method of manufacturing a sensor set-up for determining at least one pressure of a fluid medium. The method includes: a) providing a blank of a sensor set-up including at least one pressure connection, the pressure connection including at least one pressure deformation element made up of at least one material suitable for induction; b) positioning at least one glass element onto a surface of the pressure deformation element; c) measuring at least one temperature of the pressure deformation element using at least one pyrometer; d) inducing a voltage in the pressure deformation element using at least one inductor in such a manner, that the glass element melts and a glass layer forms on the pressure deformation element; e) positioning a sensor element onto the glass layer in such a manner, that an integral bond forms between the sensor element and the glass layer.