A pressure sensor assembly, which includes a support substrate, circuitry mounted to the support substrate, at least one conductor mounted to the support substrate and in electrical communication with the circuitry, and at least one vertically conductive path connected to and in electrical communication with the at least one conductor. The pressure sensor assembly also includes a diaphragm, at least one sealing glass section connected to the diaphragm and the support substrate, and at least one lateral conductive feed-through mounted to the diaphragm. At least one conductive joint is connected to the vertically conductive path and the lateral conductive feed-through, and the conductive joint provides electrical communication between the vertically conductive path and the lateral conductive feed-through.

Pressure sensors and associated structures that may facilitate the use of automated connection processes and tools. An example may provide structures for aligning interconnect wires to pressure sensor bondpads in order to facilitate the use of automated processes and tools.

A differential pressure sensor module includes a base having a pair of process fluid pressure inlets and defining a sensor chamber having a sensor chamber inlet. A differential pressure sensor is disposed within the sensor chamber and has an inlet configured to receive a first pressure and provide a signal indicative of a difference between the first pressure and a sensor chamber pressure external to the differential pressure sensor within the sensor chamber. A pair of isolation diaphragms are provided in substantially the same plane, with each isolation diaphragm sealing a respective process fluid pressure inlet. A first fluid passageway is operably coupled to one of the isolation diaphragms and the inlet of the differential pressure sensor. A second fluid passageway is operably coupled to the other of the isolation diaphragms and to the sensor chamber inlet. An overpressure protection feature is operably coupled to the sensor chamber, the first fluid passageway and the second fluid passageway.

A method of manufacturing a semiconductor structure includes receiving a substrate, receiving a heater, receiving an electrode, and receiving a sensing material. The substrate have a first surface, a second surface opposite to the first surface and a plurality of vias extending from the second surface toward the first surface and filled with a conductive or semiconductive material and a first oxide layer, the first oxide layer surrounding the conductive or semiconductive material in the plurality of vias, and a second oxide layer disposed over the first surface and the second surface. The heater is disposed within a membrane over the first surface of the substrate and electrically connected with the substrate. The electrode is over the heater and the membrane; and the sensing material covers a portion of the electrode.

A method for expanding the dynamic range of a capacitive pressure sensor and a capacitive pressure sensor having an expanded dynamic range are provided. The capacitive pressure sensor may comprise capacitive plates. At least one plate may be contoured to increase a surface area exposed to the other of the capacitive plates. The capacitive pressure sensor may comprise a diaphragm that is movably responsive to pressure. The diaphragm may have a hollowed volume within an interior of the diaphragm operative to increase a flexibility of the diaphragm in response to the pressure. The capacitive pressure sensor may be one of a plurality of capacitive pressure sensors in a pressure sensing device. The capacitive pressure sensors may have different capacitive responses and may each output a pressure measurement, whereby the device may select a pressure measurement to output based at least in part on the capacitive responses.

Provided is a pressure sensing element including a first electrode, a pressure sensing unit on the first electrode, a second electrode disposed on the pressure sensing unit and having first and second points on a top surface thereof, a first elastic member on the second electrode, and a second elastic member on the first elastic electrode, wherein a thickness of the first elastic member decreases from the first point toward the second point, and a thickness of the second elastic member increases from the second point toward the first point.

A high temperature capacitive pressure sensor includes a first sapphire wafer having a first exterior wafer surface and a first interior wafer surface, a recess extending into the first sapphire wafer, a second sapphire wafer having a second exterior wafer surface and a second interior wafer surface, a first hole extending through the first sapphire wafer, a second hole extending through the first sapphire wafer or the second sapphire wafer, a first via that solidly fills the first hole, the first via including a first interior via surface aligned with the first interior wafer surface, a second via that solidly fills the second hole, the second via including a second interior via surface aligned with the interior wafer surface of the sapphire wafer within which the second via extends, a first electrode deposited on the first interior wafer surface covering and contacting the first interior via surface.

A pressure measurement cell is disclosed including a base body, substantially cylindrical at least in sections, a measuring membrane joined to the base body in a pressure-tight manner along a perimeter joint to form a measurement chamber between the base body and the measuring membrane, and a joining material that joins the perimeter joint between the base body and the measuring membrane. The base body and/or the measuring membrane have/has a stepped recess into which the joining material is at least partially disposed, the stepped recess structured to yield a minimum distance between the base body and the measuring membrane.

A micro-electro-mechanical system (MEMS) sensor can comprise a substantially rigid layer having a center. The MEMS sensor can further comprise a movable membrane that can be separated by a gap from, and be disposed substantially parallel to, the substantially rigid layer. The MEMS sensor can further include a plurality of pedestals extending into the gap, where a first pedestal of the plurality of pedestals can be of a first size, and be disposed a first distance from the center, and a second pedestal of the plurality of pedestals can be a second size different from the first size, and be disposed at a second distance from the center. In another aspect, the substantially rigid layer and the movable membrane can be suspended by a plurality of suspension points. In another aspect, at least one of the plurality of pedestals can be disposed so as to limit a deformation of the movable membrane.

A component arrangement comprising a first component which has a first joining surface and a second component which has a second joining surface. The first joining surface is connected to the second joining surface using an integrated reactive material system. The integrated reactive material system comprises at least one coating of at least one of the joining surfaces, and the integrated reactive material system comprises an activation region on one surface. The integrated activation region is arranged outside of the joined together regions of the first or second joining surfaces and adjoins the regions which are joined together.