Patent classifications
G01L9/0048
METHODS AND APPARATUSES FOR PROVIDING FREEZE RESISTANT SENSING ASSEMBLY
Methods and apparatuses related to freeze resistant sensing assemblies are provided. An example pressure sensing assembly may include: a first member defining an aperture, the aperture comprising an inner opening disposed on an inner surface of the first member and an outer opening disposed on an outer surface of the first member; a protection diaphragm disposed on the inner surface of the first member; and a sensing diaphragm disposed in a second member fastened to the first member.
Pressure Sensor Module
A pressure sensor module comprises a base electrode surrounding at least a part of a bottom electrode, and an anchor arrangement on top of the base electrode comprising at least two electrically conductive walls that both surround at least a part of the bottom electrode. The pressure sensor module further comprises an electrically conductive layer that covers at least the bottom electrode and the anchor arrangement such that a cavity is formed between the bottom electrode, the anchor arrangement and the electrically conductive layer. The proportionate area of the electrically conductive walls in a cross section extending from the surface of the inner wall of the anchor arrangement facing the cavity to the surface of the outermost wall of the anchor arrangement facing away from the cavity in a plane parallel to the plane of the bottom electrode is equal to or less than 10%.
HIGH TEMPERATURE PROTECTED WIRE BONDED SENSORS
Systems and methods are disclosed for packaging sensors for use in high temperature environments. In one example implementation, a sensor device includes a header; one or more feedthrough pins extending through the header; and a sensor chip disposed on a support portion of the header. The sensor chip includes one or more contact pads. The sensor device further includes one or more wire bonded interconnections in electrical communication with the respective one or more contact pads and the respective one or more feedthrough pins. The sensor device includes a first sealed enclosure formed by at least a portion of the header. The first sealed enclosure is configured for enclosing and protecting at last the one or more wire bonded interconnections and the one or more contact pads from an external environment.
Pressure sensor including protective film to avoid adhesion of foreign material
A pressure sensor generates an electrical output according to a fluid pressure in a detection space applied to a diaphragm. The diaphragm is flexibly deformable in a thickness direction. The pressure sensor includes a pressure receiving recess defining the detection space and a protection film covering the pressure receiving recess. The protection film has a corner portion provided in an inner corner area of the pressure receiving recess and a thin film portion having a uniform thickness. The corner portion is located outside the diaphragm in an in-plane direction orthogonal to the thickness direction.
Sensor chip junction structure and pressure sensor
In a sensor chip junction structure, if a moving distance of a tip of a press jig (56) is any of 50 m and 30 m, for example, a characteristic line of a load (shearing force) (N) applied to an adhesive layer (50) formed on a sensor chip that is integral with a glass pedestal, the glass pedestal having a thickness set in a range from 0.3 mm to 2.5 mm is either located on any of a characteristic line Lt1 (y=1.3889x.sup.3) and a characteristic line Lt2 (y=0.463x.sup.3) or located in a region above zero and equal to or below any of the characteristic line Lt1 and the characteristic line Lt2.
METHODS OF FORMING MEMS DIAPHRAGMS INCLUDING CORRUGATIONS
A method of forming an acoustic transducer comprises providing a substrate and depositing a first structural layer on the substrate. The first structural layer is selectively etched to form at least one of an enclosed trench or an enclosed pillar thereon. A second structural layer is deposited on the first structural layer and includes a depression or a bump corresponding to the enclosed trench or pillar, respectively. At least the second structural layer is heated to a temperature above a glass transition temperature of the second structural layer causing the second structural layer to reflow. A diaphragm layer is deposited on the second structural layer such that the diaphragm layer includes at least one of a downward facing corrugation corresponding to the depression or an upward facing corrugation corresponding to the bump. The diaphragm layer is released, thereby forming a diaphragm suspended over the substrate.
SEALING GLASS GEOMETRIES FOR SENSITIVITY ENHANCEMENT OF THICK-FILM PIEZORESISTIVE PRESSURE SENSORS
A pressure sensor assembly, which includes a pressure sensing element having a diaphragm, a plurality of piezoresistors connected to the diaphragm, and at least one layer of sealing glass connected to the diaphragm. The pressure sensor assembly also includes a base, a layer of sealing glass is connected to the base, and is configured to maximize the sensitivity of the plurality of piezoresistors via tailoring the side surfaces of the glass surface to control the deformable diaphragm. The layer of sealing glass includes a first recess portion, and a second recess portion formed as part of the layer of sealing glass on the opposite side of the layer of sealing glass as the first recess portion. One of the plurality of piezoresistors is partially surrounded by the first recess portion, and another of the plurality of piezoresistors is partially surrounded by the second recess portion.
Semiconductor pressure sensor
In a semiconductor pressure sensor element, a first hydrogen permeation protection film is provided on a principal surface side of a first silicon substrate, and a second hydrogen permeation protection film is provided on a principal surface side of a second silicon substrate. The permeation paths of the hydrogen fluxes shown by the arrows A and B in FIG. 9 are blocked by the films. Also, a trench surrounding a reference pressure chamber is provided, and the first hydrogen permeation protection film and a third hydrogen permeation protection film are joined at the bottom portion of the trench, thereby blocking the permeation path of the hydrogen flux shown by the arrow C in FIG. 9. Furthermore, by providing a hydrogen storage chamber, hydrogen is trapped before the hydrogen reaches the reference pressure chamber.
MICROMECHANICAL PRESSURE SENSOR DEVICE AND CORRESPONDING MANUFACTURING METHOD
A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device is equipped with a sensor substrate; a diaphragm system that is anchored in the sensor substrate and that includes a first diaphragm and a second diaphragm situated spaced apart therefrom, which are circumferentially connected to one another in an edge area and enclose a reference pressure in an interior space formed in between; and a plate-shaped electrode that is suspended in the interior space and that is situated spaced apart from the first diaphragm and from the second diaphragm and forms a first capacitor with the first diaphragm and forms a second capacitor with the second diaphragm. The first diaphragm and the second diaphragm are designed in such a way that they are deformable toward one another when acted on by an external pressure.
Micromechanical pressure sensor
A micromechanical pressure sensor, havinga pressure sensor core including a sensor diaphragm and a cavity developed above the sensor diaphragm; anda pressure sensor frame; anda spring element for the mechanical connection of the pressure sensor core to the pressure sensor frame being developed in such a way that a mechanical robustness is maximized and a coupling of stress from the pressure sensor frame into the sensor pressure core is minimized.