A pressure sensor includes a sensor chip and a resin portion. The sensor chip extends in a lengthwise direction and includes a membrane whose length in a thickness direction perpendicular to the lengthwise direction is smaller than another part, and a piezoelectric element provided in the membrane. The sensor chip includes a fixed end that is covered with and fixed to the resin portion, and a free end opposite from the fixed end in the lengthwise direction. The free end is spaced away from the resin portion in the lengthwise direction, and the membrane is located in the free end. A shortest separation distance between the membrane and a part of the resin portion covering the sensor chip is equal to or larger than a length of the sensor chip along a crosswise direction of the sensor chip perpendicular to both the lengthwise direction and the thickness direction.

A pressure sensor includes a semiconductor substrate having a diaphragm that flexurally deforms by pressurization, a sensor part provided in the diaphragm, an insulating layer provided on the diaphragm, a conducting layer provided on the insulating layer, and a drive circuit that supplies a predetermined potential so that the drive voltage may be applied to the sensor part, wherein the conducting layer is set at a same potential as the predetermined potential or a potential larger than the predetermined potential.

A pressure sensor includes a diaphragm suspended across a cavity in a substrate. A first group of piezoresistors is provided in the diaphragm proximate a first outer edge of the diaphragm, the piezoresistors of the first group being coupled to one another to form a first Wheatstone bridge. A second group of piezoresistors is provided in the diaphragm proximate a second outer edge of the diaphragm, the piezoresistors of the second group being coupled to one another to form a second Wheatstone bridge. The first and second Wheatstone bridges exhibit mirror symmetry relative to one another. Output signals from each of the first and second Wheatstone bridges are processed at respective first and second differential amplifiers. The output signals from each of the first and second differential amplifiers are processed at a third differential amplifier to produce a pressure output signal with enhanced sensitivity and reduced impact from process variation.

This pressure and temperature determining device includes a membrane, which has a face of contact with the fluid and a securing face opposite to the contact face, a pressure determining element secured to the membrane, and a temperature determining element secured to the membrane. The pressure determining element includes at least one piezoresistive track. The temperature determining element includes at least one thermoresistive track.

A MEMS sensor. The MEMS sensor includes a deflectably situated functional layer, a conversion device for converting a deflection of the functional layer into an electrical signal, the conversion device including at least one electrical element, the at least one electrical element being at least partially electrically connected to a first area, and the first area being at least partially electrically connected to a second area, and the first and second areas and/or the first area and the at least one electrical element being electrically operable in a reverse direction and a forward direction, and a control unit, the control unit being designed to at least partially operate the at least one electrical element and the first area and/or the first area and the second area in the forward direction to provide thermal energy.

There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI, silicon carbide, or gallium nitride materials and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.

Embodiments relate generally to systems and methods for adjusting a temperature coefficient of the offset voltage (TCO) for a pressure sensor, the method comprising assembling the pressure sensor, wherein the sensor comprises a plurality of resistive elements; determining the TCO distribution for the sensor; increasing the resistance of one of a stress induced resistor or a leadout resistor of a first resistor; and decreasing the resistance of one of the stress induced resistor or the leadout resistor of the first resistor to adjust the TCO of the sensor.

Certain implementations of the disclosed technology may include systems, methods, and apparatus for a sealed transducer with an adjustment port. The sealed transducer may include one or more terminals. A first terminal may include electrical connections for connecting to an input voltage source, a ground, and for providing a transducer output signal. A second terminal, for example, may include an electrical port for connecting to an external and separately sealed adjustment network. In one example implementation, the adjustment network can include one or more components configured to couple with internal circuitry of the transducer to alter a response of the sensor.

Certain example embodiments include a press sensor element that includes a piezoelectric layer having a first surface in communication with a first layer, the first layer including a first conductive region, where the first conductive region covers at least a central portion the first surface. The sensor element includes a second surface in communication with a second layer, the second layer including a second conductive region, a third conductive region, and a first non-conductive void region separating the second conductive region and the third conductive region. An area of the first conductive region is configured in size relative to an area of the third conductive region to substantially reduce a thermally-induced voltage change between two or more of the first, second, and third conductive regions responsive to a corresponding temperature change of at least a portion of the piezoelectric layer.

A pressure sensor device is to be positioned within a material where a mechanical parameter is measured. The pressure sensor device may include an IC having a ring oscillator with an inverter stage having first doped and second doped piezoresistor couples. Each piezoresistor couple may include two piezoresistors arranged orthogonal to one another with a same resistance value. Each piezoresistor couple may have first and second resistance values responsive to pressure. The IC may include an output interface coupled to the ring oscillator and configured to generate a pressure output signal based upon the first and second resistance values and indicative of pressure normal to the IC.