A method determines the service life of a semiconductor power module, which controls an electric motor in a drive train of a vehicle. A temperature of the semiconductor power module is determined by means of a temperature model. A measured temperature of the semiconductor power module is compared with the temperature of the semiconductor power module determined by means of the temperature model and the status of the service life of the semiconductor power module is inferred from the comparison of the two temperatures.

A signal analyzer for analyzing an input signal comprises at least one input for receiving the input signal, at least one acquisition unit for acquiring data assigned to the input signal, an acquisition memory for storing the acquired data, the acquisition memory being adapted to store data in at least one ring buffer, and an acquisition memory controller to control at least one of writing the acquired data in the acquisition memory and reading the acquired data from the acquisition memory. The acquisition memory controller comprises a data read module for reading data of the at least one ring buffer. The acquisition memory controller comprises a copy write module which taps data read by the data read module. The acquisition memory comprises an additional memory section. The copy write module is configured to write the data tapped into the additional memory section. Further, a method of processing data from an input signal is described.

A method for measuring a current-voltage characteristic (Id-Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (Id-Vds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.

Provided a connector including a first female connector and a first male connector. The first female connector includes a first male sleeve, and a probe is disposed on the first male sleeve. The first male connector includes a first female sleeve, in which an elastic structure is disposed in the first female sleeve. The probe passes through a hole on the first male sleeve and is electrically connected to a second female sleeve in a second male connector. The elastic structure is electrically connected to a second male sleeve in a second female connector.

Embodiments of the invention determine intrinsic parameters of stacked nanowires/nanosheets GAA MOSFETs comprising N.sub.w nanowires and/or nanosheets, each nanowire/nanosheet being surrounded in an oxide layer, the oxide layers being embedded in a common gate, wherein the method comprises the following steps: measuring the following parameters of the MOSFET: number of stacked nanowires/nanosheets N.sub.W, width W.sub.W,i, of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.W, thickness of the nanowire/nanosheet H.sub.W,i, number i, i being an integer from 1 to N.sub.W, corner radius R.sub.W,i of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.W, R.sub.W,i; calculating, using a processor and the measured parameters, a surface potential x normalized by a thermal voltage .sub.T given by .sub.T=k.sub.BT/q; measuring the total gate capacitance for a plurality of gate voltages; determining, using the measured total gate capacitance and the calculated normalized surface potential, the intrinsic parameter of the stacked nanowires/nanosheets MOSFET.

A test and measurement circuit including a capacitor in parallel with a device under test, a direct current voltage source configured to charge the capacitor, a pulse generator configured to generate a pulse for testing the device under test, and a sensor for determining a current in the device under test.

A method for measuring a current-voltage characteristic (Id-Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (Id-Vds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.

A method for measuring a current-voltage characteristic (IdVds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (IdVds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.

The present invention relates to a prober device that shapes an input waveform of a dynamic electric signal to be input to one of probes, and observes an output waveform of the dynamic electric signal output through a sample, or preferably shapes the input waveform such that the output waveform of the dynamic electric signal output through the sample becomes approximately a pulse shape, when a response analysis of a dynamic signal is performed with respect to a fine-Structured device. With this, the response analysis of a high-speed dynamic signal equal to or greater than a megahertz level can be performed with respect to the fine-Structured device such as a minute transistor configuring an LSI.

A method for determining a corrected current-voltage curve of an electrical system, the method including the following steps: obtaining a first current-voltage characteristic curve of the electrical system, by varying the voltage across its terminals at a first measurement rate, obtaining a second current-voltage characteristic curve of the electrical system, by varying the voltage across its terminals at a second measurement rate, different from the first rate, using a single notional capacitance to model an intrinsic stray effect to be corrected between an input voltage without the stray effect and the output voltage, determining a correction value representative of the stray effect and a step of determining a corrected current value on the basis of the determined correction value.