Hardware test systems are provided that have an electrical test loop with a minimum length of less than 200 mm, a maximum di/dt capacity of at least 1500 A/μs and a minimum parasitic inductance of less than 100 nH. The hardware tests systems can be used for commutation measurement or other test applications requiring low stray inductance.

A solid state switch power emulator circuit, the circuit including a high voltage section including a high voltage power supply (HVPS); a high voltage capacitor (HVC) electronically connected to the HVPS in parallel; a high voltage switch (HVS) electronically connected to the HVC and the HVPS in series; and a high voltage load (HVL) electronically connected to the HVS in series; a low voltage section including a low voltage power supply (LVPS); a low voltage capacitor (LVC) electronically connected to the LVPS in parallel; a low voltage switch (LVS) electronically connected to the LVPS and the LVC in series; a low voltage load (LVL) electronically connected to the LVS in series; and a high voltage diode (HVD) electronically connected to the LVL in series, wherein voltage levels associated with the low voltage section are less than voltage levels associated with the high voltage section.

Systems, devices, methods, and techniques are disclosed for open load detection in the connections coming from output stages of electrical systems.

Systems and methods of detecting non-uniform aging and degradation of power assembly units are disclosed. The system may include a first power assembly unit and a second power assembly unit adjacent to the first power assembly unit. Each of the first and second power assembly units has a coupling capacitor and a number of electrical components. The system may further include a current sensor in between the coupling capacitors of the first and second power assembly units to detect a current spike in the coupling capacitors and the electrical components.

In a power supply system, a high-side (HS) insulated-gate bipolar transistor (IGBT) has a first collector, a first gate, and a first emitter. A low-side (LS) IGBT has a second collector coupled to the first emitter, a second gate, and a second emitter. A gate drive circuit is coupled to the first gate of the HS IGBT and the second gate of the LS IGBT. A control circuit is coupled to the gate drive circuit. The control circuit is configured to control the gate drive circuit for biasing the HS IGBT to a HS saturation, and determine a HS degradation of the HS IGBT based on a HS digitized gate voltage of the HS IGBT in the HS saturation.

False detection relating to overcurrent is prevented, and it is determined with no dead time whether or not the current of a main element is an overcurrent. By a gate signal indicating conductivity being applied to the gate of a sense element earlier than to a main element when the main element is caused to be conductive, and overshoot caused by a differential circuit of the sense element gate input portion being caused before current flows into the main element, it is possible to prevent false detection relating to overcurrent, and determine with no dead time whether or not the current of the main element is an overcurrent.

An apparatus provides precision measurement of voltage drop across a semiconductor switching element of a subsea device. The apparatus includes (a) a first circuit path having a first protective element, a first impedance element and a voltage source, wherein the first circuit path is configured to be connected between the first terminal and the second terminal of the semiconductor switching element, (b) a second circuit path formed between a first output terminal and a second output terminal, the second circuit path having a second protective element and a second impedance element, wherein the second protective element is identical to the first protective element, and wherein the second impedance element is identical to the first impedance element, and (c) a regulating circuit configured to regulating the current in the second circuit path such that said current in the second circuit path is equal to the current in the first circuit path, wherein the voltage drop between the first terminal and the second terminal of the semiconductor switching element equals the difference between the voltage provided by the voltage source and the voltage drop between the first output terminal and the second output terminal.

Disclosed are an IGBT-module condition monitoring equipment and method. The IGBT-module condition monitoring equipment includes an IGBT module, a gate turning-on voltage overshoot monitoring module, a driving circuit, a bond wire state judging module, and a signal acquisition module. The breakage condition of bond wires is obtained by comparing a monitored actual gate turning-on voltage overshoot with a preset reference gate turning-on voltage overshoot threshold. The present invention solves the problem encountered in monitoring the aging of IGBT bond wires in power electronic converters. By characterizing the bond wire detachment with the gate turning-on voltage overshoot, the slight aging of the detached bond wires can be monitored without disturbing the operation, which is high in resolution and free of invasiveness and enables real-time online monitoring at high sampling rate and low cost, showing great significance in the monitoring of the IGBT and the reliability evaluation of power electronic converters.

A method is for testing the functionality of a switching member including at least one switching element. A switching state is influenced via a control input of the switching element and via a control signal generated and output to the control input. An activation signal is output to the control unit and changes the control signal. The activation signal induces a test signal as the change to the control signal and induces a disconnection pulse as the test signal. The SiC or GaN power semiconductor is switched off via the disconnection pulse and conducts current in the reverse direction. In response to the disconnection pulse, the voltage drop is recorded. A comparison is carried out between an indicator and a reference encoding an expected response to the disconnection pulse. Depending on the result of the comparison, a status signal is generated which encodes the functionality of the switching member.

A deteriorated section identifying unit refers to correspondence information that defines a deteriorated section of a plurality of bonding sections to the emitter electrode surface to which the first bonding wires are connected, for a combination of temporal change of a first voltage that is a difference between a potential at a collector main terminal and a potential at the emitter main terminal and temporal change of a second voltage that is a difference between a potential at the emitter reference terminal and a potential at the emitter main terminal, and identifies the deteriorated section corresponding to a combination of temporal change of the first voltage measured by a first voltage measuring circuit and temporal change of the second voltage measured by a second voltage measuring circuit.