A test circuit includes a first logic gate that receives a test signal or a first voltage, a second logic gate that receives the test signal, a third logic gate that receives an output of the first logic gate, an output of the second logic gate, or a second voltage, a fourth logic gate that receives the output of the first logic gate or the output of the second logic gate, and a power circuit that prevents the second and fourth logic gates from being driven by supplying power to the second and fourth logic gates when the first logic gate receives the first voltage and the third logic gate receives the second voltage.

A method for predicting the fluctuation of circuit path delay on the basis of machine learning, comprising the following steps: S1: selecting suitable sample characteristics by means of analyzing the relationship between circuit characteristics and path delay; S2: generating a random path by means of enumerating values of randomized parameters, acquiring the maximum path delay by means of performing Monte Carlo simulation on the random path, selecting a reliable path by means of the 3 standard, and using the sample characteristics and path delay of the reliable path as a sample set (D); S3: establishing a path delay prediction model, and adjusting parameters of the model; S4: verifying the precision and stability of the path delay prediction model; S5: obtaining the path delay. The method for predicting the fluctuation of circuit path delay on the basis of machine learning has the advantages of high precision and low running time, thereby having remarkable advantages in the accuracy and efficiency of timing analysis.

A test mode set circuit includes: a first test mode set block suitable for setting entry into a first test mode based on a clock signal and first data outputted from a non-volatile memory during a first period of a boot-up operation; and a second test mode set block suitable for setting entry into a second test mode based on the first data and second data outputted from the non-volatile memory during a second period of the boot-up operation, or setting entry into the second test mode based on a set signal generated by a combination of a command and an address during a normal operation.

A semiconductor die may include a first delay circuit formed on a substrate and configured to delay a test signal, the first delay circuit including first delay stages connected in series, a second delay circuit formed on the substrate and configured to delay the test signal, the second delay circuit including second delay stages connected in series, at least one through silicon via connected to at least one output terminal of output terminals of the first delay stages, the at least one through silicon via penetrating through the substrate, and a load determinator configured to compare a first delay signal output from one of the first delay stages with a second delay signal output from one of the second delay stages and determine a load of the at least one through silicon via.

A test circuit includes a test pad supplied with a test signal causing the test circuit to be transitioned to a test mode, and further includes a first p channel MOS transistor having a source connected to the test pad, and a gate applied with a prescribed reference voltage, a first n channel MOS transistor having a drain connected to a drain of the first p channel MOS transistor, and a source grounded via a first current limiting element, and a control circuit which has an input terminal connected to the drain of the first n channel MOS transistor, and an output terminal connected to a gate of the first n Tr, and controls the first n channel MOS transistor from an on state to an off state when the test signal becomes a prescribed voltage or more.

A memory controller instantiated on a semiconductor IC device comprises a timing circuit to transfer a timing signal, the timing circuit being configured to receive a first test signal and to effect a delay in the timing signal in response to the first test signal, the first test signal including a first timing event. The memory controller further comprises an interface circuit configured to transfer the data signal in response to the timing signal, the interface circuit being further configured to receive a second test signal and to effect a delay in the data signal in response to the second test signal, the second test signal including a second timing event that is related to the first timing event according to a test criterion.

A semiconductor device test system and a semiconductor device test method are provided. The system includes a device under test (DUT) which provides an output voltage to a load connected to an output terminal, automatic test equipment (ATE) which supplies power to the DUT and measures the output voltage of the DUT, and a current mirror which is connected between the ATE and the DUT. The ATE outputs a reference current to the current mirror, and the DUT provides an output current to the current mirror. The output current is obtained by mirroring the reference current from the ATE.

A waveform data acquisition module includes an A/D converter that converts an electrical signal relating to a DUT into a digital signal, and a first memory unit that stores waveform data configured as a digital signal sequence. A function test module includes a test unit and a second memory unit. A higher-level controller instructs the waveform data acquisition module to start data sampling, and holds the time point thereof. Furthermore, the higher-level controller instructs the function test module to start to execute a pattern program, and records the time point thereof. The first memory unit records the time point at which the data sampling is started. The higher-level controller records the time point at which the execution of the pattern program is started.

Performance measuring circuitry, for determining relative operational performance attributes of different types of a class of semiconductor component disposed on a semiconductor die, includes a first oscillator circuit including a plurality of first circuit element modules having a first circuit topology. The first oscillator circuit provides a first performance indication indicative of a collective performance attribute of all types of components in the class. A second oscillator circuit separate from the first oscillator circuit includes a plurality of second circuit element modules having a second circuit topology, and provides a second performance indication responsive to different contributions from different types of components in the class. A comparison circuit receives outputs of the first and second oscillator circuits and determines the relative performance characteristic of the different types of components. Dice may be binned according to performance, for use in assembly of operational circuits with different performance characteristics.

The present invention maintains the accuracy of a reference current used in a functional circuit. Disclosed is a current generator circuit including a functional circuit and a diagnostic circuit. The functional circuit uses a reference current. The diagnostic circuit diagnoses the reference current in accordance with a comparison result obtained from comparison between the period of a periodic signal generated based on the reference current and the period of a reference clock inputted from the outside.