The invention concerns an optoelectronic chip including a pair of optical inputs having a same bandwidth, and each being adapted to a different polarization, at least one photonic circuit to be tested, and an optical coupling device configured to couple the two inputs to the circuit to be tested.

An optoelectronic chip includes optical inputs having different passbands, a photonic circuit to be tested, and an optical coupling device configured to couple said inputs to the photonic circuit to be tested.

A method for automated scan chain diagnostics includes segmenting an image of a device associated with a design layout to allocate pixels to individual design elements, comparing actual emission signatures for the individual design elements to expected emission signatures, and determining whether the actual emission signatures differ from the expected emission signatures by more than a threshold amount to determine if a defect is present.

A mechanism is included for receiving a phase modulated optical signal. The phase modulated signal is modulated by a remote electrical test signal at a sensor head. A reference optical signal is also received. A phase difference between the phase modulated optical signal and the reference optical signal is then determined. The phase difference is employed to recover the remote electrical test signal from the sensor head. The phase difference may be determined by employing a phase modulator in a controller that tracks a phase modulator in the sensor head. The phase difference may also be determined by comparison of the signals in the complex signal domain.

Techniques for testing connectivity between a first integrated circuit (IC) and a second IC of an electronics package are described. An example technique involves controlling a switch(es) in the first IC to configure a bias direction of a photodiode of the second IC to forward biased. A connectivity test between the first and second ICs is performed, when the photodiode is forward biased. Another technique involves controlling a switch(es) in the first IC to configure a bias direction of a photodiode in the second IC to reverse biased. A first voltage is measured at an input of a transimpedance amplifier (TIA) in the first IC when the photodiode is reverse biased. The switch(es) are controlled to change the bias direction of the photodiode to forward biased. A second voltage is measured at the input of the TIA when the photodiode is forward biased.

Methods and systems for automated diagnostics include registering an image of a device under test (DUT) to a corresponding design layout. The image is segmented based on the registration to allocate pixels to individual design elements. Emission signatures for the individual design elements are compared to expected signatures. If the emissions differ from the expected signatures more than a threshold amount to determine if a defect is present.

An inspection method includes: irradiating light through a prism to an inspection object; scanning an inspection region of the inspection object using a photographing unit; receiving, by the photographing unit, reflected light that is reflected from the inspection object; converting the reflected light received by the photographing unit into an intensity of light; and detecting a defect of the inspection object by comparing a thickness of the inspection object corresponding to the intensity of the light with a predetermined thickness of the inspection object. Therefore, the encapsulation layer is inspected before post-processes of cells or the module process, such that the yield and productivity of the OLED device can be improved.

A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

A system and method for monitoring, testing or configuring electrical devices includes an input amplifier having an input connected to a device load line to generate an output linearly proportional to a voltage on the load line. An output of the input amplifier is connected to a photodiode in an optical path with a phototransistor. The phototransistor generates an output proportional to light generated by the photodiode, and this output is amplified and passed to an analog-to-digital converter. The converter generates a digital voltage level corresponding to the amplified output of the phototransistor. Digital temperature information is used to further enhance linearity of a generated digital voltage level. Multiple quantum well photodiodes further improve measurement linearity.

An optical testing circuit on a wafer includes an optical input configured to receive an optical test signal and photodetectors configured to generate corresponding electrical signals in response to optical processing of the optical test signal through the optical testing circuit. The electrical signals are simultaneously sensed by a probe circuit and then processed. In one process, test data from the electrical signals is simultaneously generated at each step of a sweep in wavelength of the optical test signal and output in response to a step change. In another process, the electrical signals are sequentially selected and the sweep in wavelength of the optical test signal is performed for each selected electrical signal to generate the test data.