An optoelectronic chip includes optical inputs having different passbands, a photonic circuit to be tested, and an optical coupling device configured to couple said inputs to the photonic circuit to be tested.

A test apparatus includes: an electrical connection unit to be electrically connected to a terminal of each of a plurality of light emitting devices to be tested; a light source unit for collectively irradiating the plurality of light emitting devices with light; a measuring unit for measuring a photoelectric signal obtained by photoelectrically converting light irradiated by the light source unit and output via the electrical connection unit by each light emitting device; an acquisition unit for acquiring a correction map including a correction value for correcting a variation in intensity of light with which a position of each light emitting device is irradiated by the light source unit; and a determination unit for determining a quality of each light emitting device on a basis of a measurement result by the measuring unit and the correction map acquired by the acquisition unit.

An inspection method includes: irradiating light through a prism to an inspection object; scanning an inspection region of the inspection object using a photographing unit; receiving, by the photographing unit, reflected light that is reflected from the inspection object; converting the reflected light received by the photographing unit into an intensity of light; and detecting a defect of the inspection object by comparing a thickness of the inspection object corresponding to the intensity of the light with a predetermined thickness of the inspection object. Therefore, the encapsulation layer is inspected before post-processes of cells or the module process, such that the yield and productivity of the OLED device can be improved.

An inspection method includes: irradiating light through a prism to an inspection object; scanning an inspection region of the inspection object using a photographing unit; receiving, by the photographing unit, reflected light that is reflected from the inspection object; converting the reflected light received by the photographing unit into an intensity of light; and detecting a defect of the inspection object by comparing a thickness of the inspection object corresponding to the intensity of the light with a predetermined thickness of the inspection object. Therefore, the encapsulation layer is inspected before post-processes of cells or the module process, such that the yield and productivity of the OLED device can be improved.

According to an aspect there is provided an optical monitoring device comprising: a first input for receiving a portion of a first optical signal coupled from a first waveguide into the first input; a second input for receiving at least a portion of a second optical signal coupled into the second input; a mixing unit for controlling combining of the portion of the first optical signal with the at least a portion of the second optical signal into a combined signal at an output from the mixing unit; and at least one photodetector for detecting the combined signal.

The optical monitoring device is configured to apply a modulation signal to modulate at least one of a phase of the portion of the first and/or second optical signal, a coupling of the portion of the first and/or second optical signal into the respective input, or an amplitude of the portion of the first and/or second optical signal being transferred into the combined signal.

A method for testing an integrated circuit (IC) using a nanoprobe, by using a scanning electron microscope (SEM) to register the nanoprobe to an identified feature on the IC; navigating the nanoprobe to a region of interest; scanning the nanoprobe over the surface of the IC while reading data from the nanoprobe; when the data from the nanoprobe indicates that the nanoprobe traverse a feature of interest, decelerating the scanning speed of the nanoprobe and performing testing of the IC. The scanning can be done at a prescribed nanoprobe tip force, and during the step of decelerating the scanning speed, the method further includes increasing the nanoprobe tip force.

A test apparatus includes: an electrical connection unit to be electrically connected to a terminal of each of a plurality of light emitting devices to be tested; a light source unit for collectively irradiating the plurality of light emitting devices with light; a measuring unit for measuring a photoelectric signal obtained by photoelectrically converting light irradiated by the light source unit and output via the electrical connection unit by each light emitting device; an acquisition unit for acquiring a correction map including a correction value for correcting a variation in intensity of light with which a position of each light emitting device is irradiated by the light source unit; and a determination unit for determining a quality of each light emitting device on a basis of a measurement result by the measuring unit and the correction map acquired by the acquisition unit.

A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

A method of testing a photonic device includes providing a plurality of optical test signals at respective inputs of a first plurality of inputs of an optical input circuit located on a substrate, combining the plurality of optical test signals into a combined optical test signal at an output of the optical input circuit, transmitting the combined optical test signal through the output to an input waveguide of an optical device under test, the optical device under test being located on the substrate, and measuring a response of the optical device under test to the combined optical test signal. Each of the plurality of optical test signals comprises a respective dominant wavelength of a plurality of dominant wavelengths.

A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.