A method for scanning artificial structure, wherein a scanning artificial structure apparatus comprises four magnetic-field sensors, the four magnetic-field sensors are non-coplanar configured, the method comprises following steps of: moving the scanning artificial structure apparatus along a scanning path within a to-be-tested area, in the meantime, measuring magnetic field by the four magnetic-field sensors, and recording a position sequence when measuring magnetic field, wherein four magnetic-field measurement sequences are measured by the four magnetic-field sensors; and calculating a magnetic-field variation distribution from the four magnetic-field measurement sequences and the position sequence, wherein the magnetic-field variation distribution is corresponding to at least one artificial structure distribution.

A semiconductor element includes a semiconductor layer, a first electrode and a second electrode. The first electrode and the second electrode are separated from each other on the semiconductor layer. The semiconductor layer has a first semiconductor region and a second semiconductor region. The first electrode and the second electrode are provided on the first semiconductor region. The second semiconductor region is separated from the first electrode and the second electrode. The second semiconductor region is provided to be in contact with at least a part of an end surface of the first semiconductor region. The first semiconductor region has n-type/p-type conductivity. The second semiconductor region has p-type/n-type conductivity.

Embodiments of the present disclosure provide a spin-qubit quantum magnetometer and radar apparatus, entirely implemented in silicon and with full electrical control. By default, each detection element of the silicon-based spin-qubit quantum magnetometer and radar apparatus with full electrical control of the invention is built around a Field Effect Transistor (FET) on silicon over insulator with a back-gate as well as two front gates, which can be adjacent to one another along the Drain-Source FET channel or alternatively placed across that same channel and facing each other as corner gates.

Methods and apparatuses for sensing biological functions are disclosed. Sensors can be implanted in an organ, such as the brain, and a magnetic field gradient applied to the biological tissue. The field causes the sensors to have different resonant frequencies allowing their spatial localization. The sensors can harvest power from the external coils to be able to retransmit data.

A magnetic field sensor of the present invention includes a first electrode including a magnetic material, a second electrode including a non-magnetic material, a common electrode disposed between the first electrode and the second electrode and connected to a ground terminal, a power supplier of which one end is connected to the first electrode and the second electrode and of which another end is connected to the common electrode to supply power of a frequency band required, a variable resistor configured to control at least one of a resistance value between the first electrode and the power supplier or a resistance value between the second electrode and the power supplier, and a differential amplifier connected to the first electrode through a positive terminal and connected to the second electrode through a negative terminal to output a difference value between a first capacitance generated by the first electrode and a second capacitance generated by the second electrode in response to external application of a magnetic field.

A metal detection apparatus (9) is tested with a test device (7) having at least one test article (79), movable through a detection zone (60). The test article is moved through the detection zone along a first transfer axis (ca) and a first input signal is measured. A first threshold (th1) is determined, where an amplitude of the first input signal exceeds the first threshold (th1). Then, an identical test article is moved through the detection zone along a further transfer axis (ta; . . . ) and a further input signal is measured and a further threshold (th2; . . . ) is determined, where an amplitude of the further input signal exceeds the further threshold (th2; . . . ). The first or further threshold (th1; th2; . . . ) is selected in the signal processing path (4) whenever the test article is moved along the related transfer axis (ca; ta; . . . ).

In a GSR sensor element, tm and ti of rising pulse detection are close, and the induced voltage is significantly high at tm. Thus, a variation due to the magnetic field cannot be ignored. To remove an induced voltage from an output voltage and achieve a GSR sensor with a rising pulse detection system. On the basis of the knowledge that the polarity of an induced voltage becomes opposite relative to a direction of the current flowing in a magnetic wire, if one coil includes therein two magnetic wires in which currents of opposite polarities flow, an induced current is cancelled, allowing for the detection of a voltage in proportion to a magnetic field.

Methods and apparatus for a sensor with a main coil to direct a magnetic field at a rotating target for inducing eddy currents in an end of the target and a sensing element to detect a magnetic field reflected from the target, wherein the target end comprises a conductive surface. The reflected magnetic field can be processed to determine an angular position of the target.

A three-axis magnetic sensor which is not physically separated from each other and made of one element is provided. A spin-orbit torque is generated through an interface junction between a magnetization seed layer and a magnetization free layer, and through this, a change in an in-plane magnetic field may be sensed in the form of current or voltage in the magnetization seed layer. Further, a tunneling insulating layer and a magnetization pinned layer are formed on the magnetization free layer. The formed structure induces a tunnel magneto-resistance phenomenon. Through this, a change in a magnetic field in a vertical direction is sensed.

An apparatus for measuring the viscosity of fluid, including a container having a first end and a second end. The container is configured for holding fluid between the first and second ends. The apparatus further includes a moving body made of magnetic material configured to travel along a trajectory inside the container between the first and second ends, and at least one magnetic sensor configured for measuring changes in a magnetic field produced by the moving body during the travel. The apparatus further includes a memory device having prestored information related to dependencies between magnetic field variations along the trajectory and a viscosity of the fluid. The apparatus further includes a processor configured to determine viscosity of the fluid corresponding to the measured changes in accordance with the prestored information.