A cable condition monitoring sensor device includes a TMR magnetic field sensor module, a high-pass filtering module, and a signal-amplifying module which are sequentially connected. The TMR magnetic field sensor module measures a magnetic field change signal of a cable, converts the same into a voltage signal, and outputs the voltage signal to the high-pass filtering module. The high-pass filtering module filters out DC bias of the voltage signal, and transmits the filtered voltage signal to the signal-amplifying module. The signal-amplifying module amplifies the filtered voltage signal to obtain an output voltage signal and outputs the output voltage signal. In the present invention, a common mode current to be measured in the cable is extracted by placing the magnetic shielding ring made of ferromagnetic material outside the cable to filter out a differential mode load current in the cable, and the magnitude of the common mode current is determined.

A method of detecting a biological sample includes the following steps. A magnetic sensor chip is provided, wherein the magnetic sensor chip includes a substrate and a magnetic sensing layer located on the substrate. Probes are connected to the magnetic sensor chip. A sample solution containing biological samples labeled with a first marker is provided on the magnetic sensor chip, so that the biological samples labeled with the first marker are hybridized with the probes. Magnetic beads labeled with a second marker are provided on the magnetic sensor chip, so that the magnetic beads labeled with the second marker are bound onto the biological samples labeled with the first marker. A signal sensed by the magnetic sensing layer is detected by a magnetic sensor.

A magnetic sensor device includes a magnetic sensor detecting a detection-target magnetic field, and a soft magnetic structure near the sensor. In an orthogonal coordinate system having two orthogonal axes for representing an applied field strength and a magnetization-corresponding value, coordinates representing the applied field strength and the magnetization-corresponding value move along a minor loop not in contact with a major loop as the strength of an external magnetic field including the detection-target magnetic field varies within a variable range, where the applied field strength is a strength of a magnetic field applied to the soft magnetic structure, the magnetization-corresponding value is a value corresponding to magnetization of the soft magnetic structure, and the major loop is, among loops traced by a path of the coordinates as the applied field strength is varied, a loop that is the largest in terms of area of the region enclosed by the loop.

A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

The present disclosure relates to integrated circuits, and more particularly, to a highly sensitive tunnel magnetoresistance sensor (TMR) with a Wheatstone bridge for field/position detection in integrated circuits and methods of manufacture and operation. In particular, the present disclosure relates to a structure including: a first magnetic tunneling junction (MTJ) structure on a first device level; and a second magnetic tunneling junction (MTJ) structure on a different device level than the first MTJ structure. The second MTJ structure includes properties different than the first MTJ structure.

A magnetic sensor device for sensing an external magnetic field includes a plurality of MLU cells, each MLU cell having a magnetic tunnel junction including a sense layer having a sense magnetization freely orientable in the external magnetic field, a storage layer having a storage magnetization; and a tunnel barrier layer between the sense layer and the storage layer. The magnetic sensor device includes a stress inducing device configured for applying an anisotropic mechanical stress on the magnetic tunnel junction such as to induce a stress-induced magnetic anisotropy on at least one of the sense layer and the storage layer. The stress-induced magnetic anisotropy induced by the stress inducing device corresponds substantially to a net magnetic anisotropy of the at least one of the sense layer and the storage layer. The magnetic sensor device can be programmed easily and has improved sensitivity.

For triaxial magnetic detection data sequentially acquired as data points in a triaxial coordinate system, an offset calculation unit 30 calculates virtual data points P1′-P6′ by evenly parallel-translating each of data points P1-P7 so that a reference data point P7, for example, arbitrarily chosen from the data points P1-P7 coincides with an origin point O. A virtual offset point C′ for which the sum of the distances between the virtual data points P1′-P6′ and a curved surface H1 passing through the origin point O is minimized is then calculated. An offset value C for the magnetic detection data is then calculated by parallel-translating the virtual offset point C′ so as to restore the parallel-translated portion.

The present invention relates to a sensor device which has high S/N and excellent temperature characteristics. A sensor device has a semiconductor substrate, a first metal wiring layer provided on the semiconductor substrate, a first insulating layer provided on the first metal wiring layer, a compound semiconductor sensor element provided on the first insulating layer, a second metal wiring layer provided on the compound semiconductor sensor element and the first insulating layer, and a second insulating layer provided on the second metal wiring layer. A third insulating layer is provided between the first metal wiring layer and the second metal wiring layer, and the compound semiconductor sensor element is provided in the third insulating layer.

A magnetic read head is provided, comprising a bottom magnetic shield, a first free magnetic layer, a second free magnetic layer, and a top magnetic shield, arranged from bottom to top in this order in a stacking direction from a leading side to a trailing side of the read head. A non-soft bias layer is positioned below the top magnetic shield and on a back side of the first and the second free magnetic layers. The top magnetic shield has a unidirectional anisotropy, the magnetic moments of the top and the bottom magnetic shields are canted relative to a plane of the first and the second free magnetic layers, and the top and the bottom magnetic shields are decoupled from the non-soft bias layer and not magnetically coupled to a soft bias layer.

A stroke sensor includes: a shaft that extends in an axial line direction; a detected body that is fixed to the shaft; a housing that extends along the shaft, that houses the shaft, and that supports the shaft slidably in the axial line direction; and a detection body that detects a movement amount of the detected body which moves in accordance with sliding of the shaft, wherein the shaft includes a plurality of shaft members that are connected to each other in the axial line direction and that are formed of metal, and a slide part that is in contact with an inner wall of the housing and that slides so as to regulate a movement of the shaft in a direction that is crossed with the axial line is provided on each of the plurality of shaft members.