A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

A radiation imaging apparatus, comprising a sensor array and a controller, wherein the controller shifts to a non-capturing mode upon receiving an instruction representing a suspension of radiographic imaging, and shifts to a capturing mode upon receiving an instruction representing a start of radiographic imaging, and the controller performs, in the capturing mode, one of movie capturing and continuous capturing in which an operation of driving the sensor array in response to one radiation irradiation for the sensor array and acquiring image data of one frame from the sensor array is repetitively executed, and, in the non-capturing mode, drives the sensor array to suppress lowering of a temperature of the sensor array in the non-capturing mode from the temperature of the sensor array in the capturing mode.

A method is disclosed for producing a hybrid, incorporable into a sensor board, for a detector module including a plurality of reader units. An embodiment of the method includes positioning the reader units in a stacked construction, each on a common sensor layer. The method further includes, after all of the reader units are positioned, fixing the reader units together on the sensor layer, thereby forming the hybrid. An embodiment of the invention further relates to a detector module for an X-ray detector including a number of sensor boards arranged adjacent to one another on a module carrier. The sensor boards are produced by an embodiment of the method.

An X-ray detector assembly for an imaging system is provided. The X-ray detector assembly includes a block for mounting to a rotating disc, the block including two opposing end surfaces, two opposing side surfaces and at least one mounting surface, and at least two detector chips, each detector chip including an X-ray detecting surface and an opposing block-facing surface, two opposing end surfaces and two opposing side surfaces, and each detector chip having a flexible bus mounted to the opposing block-facing surface of the detector chip adjacent to a side surface of the detector chip. The at least one mounting surface of the block receives the at least two detector chips in side-by-side disposition, with the buses of the at least two detector chips extending along a side surface of the block.

An imaging method and device are described for improving the performance of a gamma camera by optimizing a figure of merit that depends upon cost, efficiency, and spatial resolution. In a modular gamma camera comprising a tiled array of gamma detector modules, the performance figure of merit can be optimized by sparsely placing gamma detector modules within the gamma camera, optimizing collimation, and providing means for detector and/or collimator motion. Sparse gamma cameras can be constructed as flat or curved panels, and elliptical or circular rings.

Various methods and systems are provided for an imaging detector array. In one example, a detector module of the array has a central slit separating a first tile from a second tile of the detector module. An integrated circuit is located along a first side of the first tile and along a first side of the second tile and flex cable coupled to the integrated circuit of the first portion extends through the central slit of the detector module.

The present invention relates to a sensor device for detecting radiation signals. To enable high signal integrity and cost efficiency while maintaining the capability of being four-sidedly buttable, the proposed sensor device comprises a sensor array (22) comprising a plurality of detectors (11, 11a-d), a sensor element (14) for converting said received radiation signals (74, 74′) into a plurality of corresponding electric signals, an interposer element (16, 16a-d) extending laterally between a first side (28) and a second side (30), and an integrated circuit element (18, 18a-d). The interposer element (16, 16a-d) comprises a front surface (24) facing said sensor element (14) and a back surface (26) parallel to said front surface (24), wherein a front contact arrangement (36) is provided on said front surface (24) for directing said electric signals to a back contact arrangement (40) provided on said back surface (26). The integrated circuit element faces said back surface (26) and is electrically connected to said back contact arrangement (40).

Photon counting detectors are sparsely placed at predetermined positions in the fourth-generation geometry around an object to be scanned in spectral Computer Tomography (CT). An X-ray emitting source rotates radially outside the sparsely placed photon counting detectors. Furthermore, the integrating detectors are placed in the third-generation in combination to the sparsely placed photon counting detectors at predetermined positions in the fourth-generation geometry.

Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

A detector for detecting a single x-ray photon with high temporal resolution and high efficiency includes a semiconductor substrate, the semiconductor substrate including element(s) from each of Groups III and V of the Periodic Table of Elements, and pixels on the substrate. Each pixel includes a semiconductor transistor including an epitaxial layer having element(s) from each of Groups III and V of the Periodic Table of Elements, an anode electrically connected to a gate of the semiconductor transistor, and a cathode electrically connected to a drain of the semiconductor transistor. Photon(s) are caused to impinge the single-photon detector along a y-direction (long side of pixel) to provide adequate stopping power, and electron-hole pairs generated by the photon(s) are collected along an x-direction or z-direction (short sides of pixel) to provide short transit time. Detectors form an array of pixels for x-ray imaging with temporal resolution of single photons.