There is provided a detector module (1) for a modular x-ray detector, wherein the detector module (1) includes multiple x-ray detector substrates (10) and associated anti-scatter collimators (20). Each x-ray detector substrate (10) has a number of detector diodes, and each x-ray detector substrate has an associated anti-scatter collimator (20). Each x-ray detector substrate (10) has an integrated circuit (30) for collecting x-ray signals from the diodes attached to the x-ray detector substrate at the bottom of the x-ray detector substrate assuming the top is where the x-rays enter, and the associated anti-scatter collimator (20) is placed above the integrated circuit (30).

Silicon photomultiplier circuitry is provided that comprises at least one silicon photomultiplier pixel, each pixel comprising a plurality of silicon photomultiplier microcells. The silicon photomultiplier circuitry comprises control circuitry adapted to maintain a substantially constant voltage on a connection node between microcells of the pixel. The control circuitry is adapted to minimize the onset and recovery time of an output signal by maintaining a substantially constant voltage on the connection node.

An image sensor includes a first semiconductor chip including first and second surfaces; a second semiconductor chip including first and second surfaces; and a first adhesive layer between the second surface of the first semiconductor chip and the second surface of the second semiconductor chip, the first semiconductor chip being stacked on the second semiconductor chip via the first adhesive layer such that a footprint of the first semiconductor chip is larger than a footprint of the second semiconductor chip with respect to a plan view of the image sensor, the first semiconductor chip including an array of unit pixels configured to capture light corresponding to an image and to generate image signals based on the captured light, the second semiconductor chip including first peripheral circuits configured to control the array of unit pixels and receive the generated image signals.

An array (1) for detecting electromagnetic radiation is provided for a radiographic inspection system (20). The array has a plurality of detector elements (2) arranged consecutively along a scan line which extends in a first direction (Y). Each of the detector elements has a detection surface (3) for receiving electromagnetic radiation and converting the received electromagnetic radiation into a corresponding detection signal. Each detection surface (3) has a surface normal (4, N) that extends in a common plane (S) and converges into a common focus (5). The common plane (S) extends in the first direction (Y). The distances between the common focus and the detection surfaces along the respective surface normal (4, N) are different for at least two detector elements.

There is provided an edge-on x-ray detector configured for detecting incoming x-rays. The edge-on x-ray detector includes a plurality of adjacent x-ray sensors, and each x-ray sensor is oriented edge-on to incoming x-rays. The x-ray sensors are arranged side-by-side and/or lined up one after the other, and the interspacing between the x-ray sensors is at least partly filled with a gap filling material including a mixture or compound of resin and metal disulfide.

Disclosed herein is radiation detector comprising: a radiation absorption layer configured to generate electric signals by absorbing radiation particles; an electronics layer comprising an electronic system configured to process or interpret the signals; a flexible PCB configured to receive output from the electronic system; wherein the radiation absorption layer and the flexible PCB are mounted on a same side of the electronics layer.

A method of forming a radiation detector includes forming a stack including a plurality of arrays of radiation detection devices. Forming an array of the plurality of arrays includes forming a polysilicon layer over an interlayer dielectric layer of another array of the plurality of arrays; forming charge storage layers over the polysilicon layer; forming a second polysilicon layer over the charge storage layers; etching the second polysilicon layer to form gate stacks; and depositing an interlayer dielectric disposed on at least three sides of the gate stacks, the interlayer dielectric including a radiation reactive material.

A panel radiation detector is provided for detecting radiation event(s) of ionizing radiation, comprising a plurality of adjoining plastic scintillator slabs, a plurality of silicon photomultiplier sensors arranged at an edge of at least one of the plastic scintillator slabs) and configured to detect scintillation light generated in the scintillator slabs responsive to the radiation events, and a plurality of signal processing units each connected to one of the silicon photomultiplier sensors, wherein the signal processing units each comprise a digitization circuit configured to generate a digitized signal for signal analysis by executing 1-bit digitization of a detection signal generated by at least one of the silicon photomultiplier sensors responsive to the detected scintillation light for determining the energy of the detected radiation event(s).

The present invention relates to a photon counting detector comprising a plurality of detector tiles. Each detector tile comprises a sensor material layer (20), an integrated circuit (30), an input/output connection or flex (50), a high voltage electrode or foil (60), and an anti scatter grid (10). The input/output connection or flex is connected to the integrated circuit. The integrated circuit is configured to readout signals from the sensor material layer. The anti scatter grid is positioned adjacent to a surface of the sensor material layer. The high voltage electrode or foil extends across the surface of the sensor material layer and is configured to provide a bias voltage to the surface of the sensor material layer. The high voltage electrode or foil comprises at least one tail section (70). Relating to the photon counting detector and the plurality of detector tiles, the high voltage electrode or foil of a first detector tile is configured to make an electrical connection with the high voltage electrode or foil of an adjacent detector tile via one or more tail sections of the at least one tail section of the first detector tile and/or via one or more tail sections of the at least one tail section of the adjacent detector tile.

Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.