An optical communication system includes a co-packaged optical module and a heatsink mounted to the co-packaged optical module. The co-packaged optical module includes a processor disposed on a substrate and a plurality of light engines disposed at different locations around the processor on the substrate. The processor and the light engines generating different amounts of heat during operation. The heatsink includes a plurality of heat pipes non-uniformly distributed throughout the heatsink to remove the different amounts of heat generated at a location of the processor and respective locations of the different ones of the light engines.

An optical communication system includes a co-packaged optical module and a heatsink mounted to the co-packaged optical module. The co-packaged optical module includes a processor disposed on a substrate and a plurality of light engines disposed at different locations around the processor on the substrate. The processor and the light engines generating different amounts of heat during operation. The heatsink includes a plurality of heat pipes non-uniformly distributed throughout the heatsink to remove the different amounts of heat generated at a location of the processor and respective locations of the different ones of the light engines.

An optoelectronic apparatus (200) and an optoelectronic integration method are disclosed, so that bandwidth for signal transmission can be improved, and signal transmission performance is improved. The optoelectronic apparatus (200) includes: a printed circuit board PCB (201), where a first substrate (203) and a second substrate (205) are separately disposed on the PCB (201), an application specific integrated circuit ASIC (202) is disposed on the first substrate (203), and an optoelectronic component (204) is disposed on the second substrate (205); and a flexible printed circuit FPC (206), where a first end of the FPC (206) is disposed on an upper surface of the first substrate (203) and is electrically connected to the ASIC (202), and a second end of the FPC (206) is disposed on the second substrate (205) and is electrically connected to the optoelectronic component (204).

A photonic integrated circuit (PIC) device has photonic devices arranged in an array with respect to control and common conductors. Each of the photonic devices has a photonic component (e.g., photodiode, thermo-optic phase shifter, etc.) and a switching diode connected in series with one another between a control connection and a common connection. The photonic component has at least one optical port, which can be coupled to a waveguide in the PIC device. The switching diode is configured to switch between reverse and forward bias in response to the electrical signals. In this way, control circuitry for providing control and monitoring signals to the conductors can be greatly simplified, and the PIC device can be more compact.

A photonic integrated circuit (PIC) device has photonic devices arranged in an array with respect to control and common conductors. Each of the photonic devices has a photonic component (e.g., photodiode, thermo-optic phase shifter, etc.) and a switching diode connected in series with one another between a control connection and a common connection. The photonic component has at least one optical port, which can be coupled to a waveguide in the PIC device. The switching diode is configured to switch between reverse and forward bias in response to the electrical signals. In this way, control circuitry for providing control and monitoring signals to the conductors can be greatly simplified, and the PIC device can be more compact.

A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

There is set forth herein a method including building a first photonics structure using a first wafer having a first substrate, wherein the building the first photonics structure includes integrally fabricating within a first photonics dielectric stack one or more photonics device, the one or more photonics device formed on the first substrate; building a second photonics structure using a second wafer having a second substrate, wherein the building the second photonics structure includes integrally fabricating within a second photonics dielectric stack a laser stack structure active region and one or more photonics device, the second photonics dielectric stack formed on the second substrate; and bonding the first photonics structure and the second photonics structure to define an optoelectrical system having the first photonics structure bonded the second photonics structure.

There is set forth herein a method including building a first photonics structure using a first wafer having a first substrate, wherein the building the first photonics structure includes integrally fabricating within a first photonics dielectric stack one or more photonics device, the one or more photonics device formed on the first substrate; building a second photonics structure using a second wafer having a second substrate, wherein the building the second photonics structure includes integrally fabricating within a second photonics dielectric stack a laser stack structure active region and one or more photonics device, the second photonics dielectric stack formed on the second substrate; and bonding the first photonics structure and the second photonics structure to define an optoelectrical system having the first photonics structure bonded the second photonics structure.

An electronic package structure is provided. The electronic package structure includes a first carrier, a first electronic component, a first optical channel, and a second electronic component. The first electronic component is disposed on or within the first carrier. The first optical channel is disposed within the first carrier. The first optical channel is configured to provide optical communication between the first electronic component and the second electronic component. The first carrier is configured to electrically connect the first electronic component.