A quantum optimization system and method estimate, on a classical computer and for a quantum state, an expectation value of a Hamiltonian, expressible as a linear combination of observables, based on expectation values of the observables; and transform, on the classical computer, one or both of the Hamiltonian and the quantum state to reduce the expectation value of the Hamiltonian.

Photonic devices including a distributed Bragg reflector (DBR) having a stack of Group III-Nitride layers and Aluminum Scandium Nitride layers.

An optical modulator includes an emitter layer with N-type doping having a first bandgap energy; a base layer with P-type doping having a second bandgap energy; a sub-emitter layer disposed between the emitter layer and the base layer, wherein the sub-emitter layer has a third bandgap energy that is less than both the first bandgap energy and the second bandgap energy. The sub-emitter layer provides a barrier to electrons flowing from the emitter layer, while allowing photo-generated holes to recombine in the sub-emitter layer thereby mitigating current amplification.

A display apparatus includes a liquid crystal panel; light sources configured to emit blue light; a reflective sheet including a first edge portion and a second edge portion, wherein a plurality of holes are disposed on the reflective sheet, the plurality of holes includes a first hole, a second hole, and a third hole, the first hole is disposed at a first distance from an edge of the first edge portion, the second hole is disposed at a second distance from the edge of the first edge portion, and the third hole is disposed at the first distance from the edge of the first edge portion, wherein the second distance is greater than the first distance; and pluralities of light conversion dots disposed around the first, second, and third holes, respectively, wherein the third hole is disposed on an overlap portion of the first and second edge portions.

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In.sub.1-xGa.sub.xN/GaN multiple quantum wells (MQWs). In-rich In.sub.xGa.sub.1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In.sub.1-xGa.sub.xN/GaN multiple quantum wells (MQWs). In-rich In.sub.xGa.sub.1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm.sup.2.

A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

A semiconductor optical device may include a semiconductor substrate; a compound semiconductor layer on the semiconductor substrate; an additional insulating film on the pedestal portion of the compound semiconductor layer, the additional insulating film having an upper surface and a side surface at an inner obtuse angle between them; a passivation film covering the compound semiconductor layer and the additional insulating film except at least part of the mesa portion, the passivation film having a protrusion raised by overlapping with the additional insulating film; a mesa electrode on the at least part of the mesa portion; a pad electrode on the passivation film within the protrusion; and an extraction electrode on the passivation film, the extraction electrode being continuous within and outside the protrusion, the extraction electrode connecting the pad electrode and the mesa electrode, the extraction electrode being narrower in width than the pad electrode.

A display apparatus includes a liquid crystal panel; light sources configured to emit blue light; and a reflective sheet including a first edge portion and a second edge portion, wherein a plurality of holes are disposed on the reflective sheet, the plurality of holes includes a first hole, a second hole, and a third hole. The first hole is disposed at a first distance from an edge of the first edge portion, the second hole is disposed at the first distance from an edge of the second edge portion, and the third hole is disposed at a second distance from the edge of the first edge portion. The display apparatus further includes first light conversion dots disposed around the first hole, second light conversion dots disposed around the second hole, and third light conversion dots disposed around the third hole.