A curable resin composition contains quantum dots (A), a resin (B), a photopolymerizable compound (C), a photopolymerization initiator (D), an antioxidant (E), a leveling agent (F), and a solvent (G), wherein the resin (B) has a weight-average molecular weight in terms of polystyrene of less than 10000 and an acid value of 90 mg KOH/g or more and 150 mg KOH/g or less.

A quantum dot-containing composition includes a quantum dot, a ligand having coordinating groups, which coordinates to the surface of the quantum dots, and the ligand is represented by Formula I. ##STR00001##
In Formula I, A is an organic group including one or more coordinating groups selected from an amino group, a carboxy group, a mercapto group, a phosphine group, and a phosphine oxide group, Z is an (n+m+l)-valent organic linking group, R is a group including an alkyl group, an alkenyl group, or an alkynyl group each of which may have a substituent, Y is a group having a polymer chain which has a degree of polymerization of 3 or greater and which includes a polyacrylate skeleton or the like. n and m are each independently 1 or greater, l is 0 or greater, and n+m+l is integer 3 or greater. At least two coordinating groups are included in a molecule.

A device having a layered structure that includes a layer of phase change material and a matrix material layer having embedding quantum emitters is tuned. An electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters. A phase of the phase change material is changed, in a non-volatile manner, in each of one or more of local areas of the phase change material, to form local alterations that are opposite to respective ones of the quantum emitters in the matrix material layer, to locally modify the electric field at the respective quantum emitters.

A device having a layered structure that includes a layer of phase change material and a matrix material layer having embedding quantum emitters is tuned. An electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters. A phase of the phase change material is changed, in a non-volatile manner, in each of one or more of local areas of the phase change material, to form local alterations that are opposite to respective ones of the quantum emitters in the matrix material layer, to locally modify the electric field at the respective quantum emitters.

Provided are an optical modulating device and a system including the optical modulating device. The optical modulating device includes a substrate, and a phase modulator formed on the substrate and including a Fabry-Perot cavity. The Fabry-Perot cavity of the phase modulator includes a first reflective layer, a second reflective layer, and a tunable core formed between the first reflective layer and the second reflective layer, wherein the tunable core is formed of a semiconductor material and is configured to modulate a phase of light corresponding to modulation of a refractive index of the tunable core according to electrical control.

Disclosed are a quantum light source and an optical communication apparatus including the same. The quantum light source device includes a vertical reflection layer disposed on a substrate, a lower electrode layer disposed on the vertical reflection layer, a horizontal reflection layer disposed on the lower electrode layer, a quantum light source disposed in the horizontal reflection layer, and an upper electrode layer disposed on the horizontal reflection layer.

Improved systems and methods for externally modulating a laser. Such systems may comprise a laser section and a modulator section made of an active material that selectively absorbs light from the laser section, where the operating wavelength of the laser is near the exciton absorption peak of the active material of the EAM.

There is provided a curable resin composition containing quantum dots (A), a resin (B), a photopolymerizable compound (C), and a photopolymerization initiator (D), in which the photopolymerization initiator (D) contains an oxime compound having a first molecular structure represented by the formula (1).

A reflective spatial light modulator (SLM) made of an electro-optic material in a one-sided Fabry-Perot resonator can provide phase and/or amplitude modulation with fine spatial resolution at speeds over a Gigahertz. The light is confined laterally within the electro-optic material/resonator layer stack with microlenses, index perturbations, or by patterning the layer stack into a two-dimensional (2D) array of vertically oriented micropillars. Alternatively, a photonic crystal guided mode resonator can vertically and laterally confine the resonant mode. In phase-only modulation mode, each SLM pixel can produce a π phase shift under a bias voltage below 10 V, while maintaining nearly constant reflection amplitude. This high-speed SLM can be used in a wide range of new applications, from fully tunable metasurfaces to optical computing accelerators, high-speed interconnects, true 2D phased array beam steering, beam forming, or quantum computing with cold atom arrays.

In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.