In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

Electro-optic modulators and related devices and methods. The method includes forming a silicon dioxide layer on a silicon substrate. The method includes forming a doped silicon layer in or on the silicon dioxide layer. The method includes forming alternating layers of functional transition metal oxides (TMOs) on the doped silicon layer. Design parameters can be optimized to create realizable devices that minimize the energy consumption of, for example, a SrTiO.sub.3/LaAlO.sub.3 electro-optic modulator while maximizing electro-optic performance (e.g., modulation energies on the order of tens of pJ/bit).

Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.

Provided is a metaoptic configured to modulate incident light in a wavelength band, the metaoptic including a plurality of meta units respectively including a first semiconductor layer, an active layer provided on the first semiconductor layer, the active layer having a multiple quantum well structure and a refractive index variable based on a voltage applied thereto, and a second semiconductor layer provided on the active layer and doped with a polarity opposite to a polarity of the first semiconductor layer, wherein at least one of the plurality of meta units includes a plurality of first elements having a cylindrical shape and periodically provided spaced apart from each other in a first direction, and a plurality of second elements connecting the plurality of first elements to each other, and wherein the plurality of meta units are provided in a second direction that is perpendicular to the first direction.

A color filter, a method for manufacturing a color filter, a color filter substrate, and a display device are disclosed. The color filter includes a first quantum dot light emitting layer and a first reflective layer. The first quantum dot light emitting layer has a light incident surface; and the first reflective layer is on a side of the first quantum dot light emitting layer away from the light incident surface, the first quantum dot light emitting layer includes a plurality of first quantum dots, the first quantum dots are configured to be stimulated by light of a first wavelength from the light incident surface to emit light of a second wavelength, and the first reflective layer is configured to transmit the light of the second wavelength and reflect the light of the first wavelength.

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin.

Provided is a liquid-crystal display device including a display panel, a backlight module, and a fingerprint identification module. The display panel includes a display region. The display region includes a first display region and a second display region. The second display region also serves as a light sensing element region. The backlight module is configured to provide a backlight for the display panel and is provided with a via penetrating through the backlight module. The fingerprint identification module is disposed inside the via and includes a fingerprint identification sensor, a light plate, and a quantum dot film. The light plate is disposed between the fingerprint identification sensor and the quantum dot film. The quantum dot film is disposed between the light plate and the display panel. The quantum dot film includes at least one quantum dot set. The at least one quantum dot set includes infrared quantum dots.

A display apparatus includes a liquid crystal panel; light sources configured to emit blue light; a reflective sheet including a first edge portion and a second edge portion, wherein a plurality of holes are disposed on the reflective sheet, the plurality of holes includes a first hole, a second hole, and a third hole, the first hole is disposed at a first distance from an edge of the first edge portion, the second hole is disposed at a second distance from the edge of the first edge portion, and the third hole is disposed at the first distance from the edge of the first edge portion, wherein the second distance is greater than the first distance; and pluralities of light conversion dots disposed around the first, second, and third holes, respectively, wherein the third hole is disposed on an overlap portion of the first and second edge portions.

A semiconductor Mach-Zehnder optical modulator includes input-side lead-out lines, phase modulation electrode lines, and electrodes that apply modulation signals propagating through the phase modulation electrode lines to waveguides, respectively. The semiconductor Mach-Zehnder optical modulator further includes a conductive layer between a substrate and the waveguides, a plurality of first wiring layers connected to the conductive layer, and a second wiring layer that connects an electrode pad and the plurality of first wiring layers.

In an EADFB laser with an integrated SOA, a new configuration in which deterioration of optical waveform quality is solved or mitigated while taking advantage of characteristics that the same layer structure can be used and the manufacturing process can be simplified is shown. In an optical transmitter of the present disclosure, a carrier density is optimized depending on a light intensity inside the SOA and an amount of carrier consumption. The SOA is electrically separated into a plurality of regions, and a current is injected into each region independently. The divided SOA region is configured so that a length of the SOA region becomes shorter as a region is farther from an incidence end of the SOA. Further, for the divided SOA, an amount of carrier consumption increases as the SOA region is farther from the incidence end, so that a current injection amount is increased.