A photonic integrated circuit, PIC, comprising a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming a PIN or PN doping structure, the PIC comprising a waveguide arranged for conducting light waves; an optical element connected to the waveguide, wherein the optical element, in operation, is in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source; wherein the waveguide comprises conducting contacts proximal to the optical element, and wherein the PIC further comprises at least one isolation section arranged in between the optical element and the conducting contacts. Corresponding methods of operation of such a PIC are also presented herein.

A quantum rod includes a nanoparticle, and at least one ligand linked to the surface of the nanoparticle and represented by Formula 1.

R.sub.1-(L.sub.1).sub.b1-(A.sub.1).sub.a1-(L.sub.2).sub.b2-(A.sub.2).sub.a2-(L.sub.3).sub.b3-T.sub.1.  Formula 1 A light-emitting device, an optical member, and an apparatus, each includes the quantum rod.

A quantum rod includes a nanoparticle, and at least one ligand linked to the surface of the nanoparticle and represented by Formula 1.

R.sub.1-(L.sub.1).sub.b1-(A.sub.1).sub.a1-(L.sub.2).sub.b2-(A.sub.2).sub.a2-(L.sub.3).sub.b3-T.sub.1.  Formula 1 A light-emitting device, an optical member, and an apparatus, each includes the quantum rod.

A light modulating device for modulating incident light in a given wavelength band is provided. The light modulating device may include: a first semiconductor layer; an active layer provided on the first semiconductor layer and having a multiple quantum well structure and a refractive index that is variable according to an electric field applied thereto, and a second semiconductor layer provided on the active layer and including a grating pattern in which a plurality of gratings extending in a first direction are repeatedly arranged in a second direction perpendicular to the first direction. The light modulating device may have high modulation efficiency owing to guided mode resonance by the grating pattern.

A device for modulating the amplitude of an incident laser radiation of wavelength λ.sub.i is provided. The device includes a metal bottom layer above which there is a semiconductive layer contains a stack of a plurality of quantum wells above which there is a structured metal top layer, the two metal layers being reflective to the incident laser radiation, the structuring of the top layer and the distance between said two metal layers being small enough for the device to form an optical microcavity having at least one resonance mode; at least a part of the quantum wells, called active wells, having an intersubband absorption at a central wavelength λ.sub.ISB=hc/E.sub.ISB, the coupling between said intersubband transition at said central wavelength λ.sub.ISB and one of the modes of the microcavity driving the excitation of cavity polaritons and a Rabi splitting at the energies E.sub.ISB±ℏΩ.sub.Rabi with Ω.sub.Rabi the Rabi frequency; said device including an electric circuit configured to apply two distinct voltage differences, V.sub.0 and V.sub.1, between the two metal layers, the device absorbing the incident radiation for the voltage difference V.sub.0 and the device reflecting or transmitting the incident radiation for the voltage difference V.sub.1.

A device for modulating the amplitude of an incident laser radiation of wavelength λ.sub.i is provided. The device includes a metal bottom layer above which there is a semiconductive layer contains a stack of a plurality of quantum wells above which there is a structured metal top layer, the two metal layers being reflective to the incident laser radiation, the structuring of the top layer and the distance between said two metal layers being small enough for the device to form an optical microcavity having at least one resonance mode; at least a part of the quantum wells, called active wells, having an intersubband absorption at a central wavelength λ.sub.ISB=hc/E.sub.ISB, the coupling between said intersubband transition at said central wavelength λ.sub.ISB and one of the modes of the microcavity driving the excitation of cavity polaritons and a Rabi splitting at the energies E.sub.ISB±ℏΩ.sub.Rabi with Ω.sub.Rabi the Rabi frequency; said device including an electric circuit configured to apply two distinct voltage differences, V.sub.0 and V.sub.1, between the two metal layers, the device absorbing the incident radiation for the voltage difference V.sub.0 and the device reflecting or transmitting the incident radiation for the voltage difference V.sub.1.

A color filter including a first pixel (or color conversion region) that is configured to emit a first light and a display device including the color filter. The first pixel includes a (first) quantum dot composite (or a color conversion layer including the quantum dot composite), wherein the quantum dot composite may include a matrix and a plurality of quantum dots dispersed (e.g., randomly) in the matrix, wherein the plurality of the quantum dots exhibit a multi-modal distribution (e.g., a bimodal distribution) including a first peak particle size and a second peak particle size in a size analysis, wherein the second peak particle size is greater than the first peak particle size, and a difference between the first peak particle size and the second peak particle size is less than or equal to about 5 nanometers (nm) (e.g., less than or equal to about 4.5 nm).

A color filter including a first layer including first quantum dots and a second layer including second quantum dots that are different from the first quantum dots, and disposed on the first layer, wherein a quantum yield of the first quantum dots is greater than a quantum yield of the second quantum dots, and wherein an absorption of blue light of the second quantum dots is greater than an absorption of the blue light of the first quantum dots.

A method for making a semiconductor device may include forming a plurality of waveguides on a substrate, and forming a superlattice overlying the substrate and waveguides. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming an active device layer on the superlattice comprising at least one active semiconductor device.

The display apparatus includes a light source; and a quantum dot complex disposed in front of the light source, and configured to convert a wavelength of light emitted from the light source. The quantum dot complex includes an oxide having dendritic structure; and a quantum dot bonded to the oxide.