A solid state optical beam steering device and method of operation includes converting a frequency or wavelength of a signal in a non-linear converter associated with one channel just before launch. A second channel has a similar constructions and operation. A processor compares the phase difference between the two channels and uses the difference to horizontally steer a beam without moving mechanical parts. This establishes the solid-state nature of the present disclosure. The non-linear converter may be a quasi-phase matched non-linear converter with alternating crystal domains.

The invention relates to a method for manufacturing mirrors with saturable semiconducting absorptive material, which includes: depositing a saturable semiconducting absorptive material (205) onto a growth substrate (200) in order to form a structure; depositing at least one metal layer onto the structure such as to form a first mirror (211); and depositing a heat-conductive substrate (212) onto the metal layer by electrodeposition through an electrically insulating mask (312), allowing the selective deposition of the thermally conductive substrate, in order to predefine the perimeter of the mirrors with saturable semiconducting absorptive material.

A waveguide includes an array of p-i-n junctions formed by ions implanted into the waveguide. The p-i-n junctions concentrate electric fields applied on the waveguide to convert the third order susceptibility .sup.(3) into the second order susceptibility .sup.(2) and induce the DC Kerr effect. The periodic electrical fields concentrated by the p-i-n junctions effectively create a wave vector, which together with the wave vectors of optical beams in the waveguide satisfies phase matching conditions for nonlinear optical effects. The phase matching can significantly enhance the efficiency of the nonlinear optical effects, such as second harmonic generation, sum frequency generation, difference frequency generation, and four-wave mixing. Waveguides with arrays of PIN junctions can also be used in phase modulators, amplitude modulators, and filters.

A frequency conversion device and method is disclosed. In one aspect, a frequency device includes an array of mutually spaced semiconductor islands composed of at least one III-V semiconductor compound. The semiconductor islands are configured so that electromagnetic radiation of a first wavelength incident upon the semiconductor islands causes them to emit electromagnetic radiation of a second wavelength shorter than the first wavelength by a nonlinear frequency conversion process. The frequency device further includes a transparent support supporting the semiconductor islands. The transparent support is substantially transparent to radiation of the second wavelength, so that at least the radiation of the second wavelength passes through the transparent support.

Single-shot transient optical signals are recorded in a time regime of picoseconds to nanosecond. An auxiliary pump beam is crossed through the signal to sample a diagonal slice of space-time, analogous to a rolling shutter. The slice is then imaged onto an ordinary camera, where the recorded spatial trace is a direct representation of the time content of the signal. The pump samples the signal by optically exciting carriers that modify the refractive index in a conventional semiconductor wafer. Through use of birefringent retarders surrounding the wafer, the integrating response of the rapidly excited but persistent carriers is differentiated by probing with two polarization-encoded time-staggered signal replicas that are recombined to interfere destructively.

A method and apparatus for generating high-order harmonics in a solid-state medium comprising integrated semiconductor devices and electronics. The high-order harmonics interact with and are modified by the internal electric field associated with the operation of the integrated semiconductor devices and electronics. Measurement of the high-order harmonics after modification by the internal electric fields amounts to high resolution (temporal and spatial) dynamic imaging of the internal electric fields associated with the integrated semiconductor devices and electronics.

A wideband ultra-high refractive index mesoscopic crystal structure using space-filling of an electric dipole according to one aspect of the present disclosure includes: a first layer in which a plurality of high-conductivity unit bodies is arranged in a matrix form, and a low-conductivity material is disposed between the high-conductivity unit bodies to insulate the high-conductivity unit bodies from each other; a second layer in which a plurality of high-conductivity unit bodies is arranged in a matrix form, and a low-conductivity material is disposed between the high-conductivity unit bodies to insulate the high-conductivity unit bodies from each other, the second layer being adjacent to the first layer; and a shield layer existing between the first and second layers and made of a low-conductivity material, wherein the high-conductivity unit bodies in the first layer overlap the plurality of high-conductivity unit bodies arranged in the second layer, and a stack in which the first layer, the shield layer, the second layer, and the shield layer are sequentially stacked is repeated one or more times.

A method of nonlinear wavelength generation uses a nonlinear optical medium. An input flux of pump energy is applied to one or more dielectric optical resonators. Each resonator has an optical cavity comprising the nonlinear optical medium. Each resonator has at least one Mie resonance that is excited by the input flux of pump energy. The pump energy causes the generation of converted light containing at least one converted component having a frequency attainable only through a non-linear process.

Systems and methods for measuring or inspecting semiconductor structures using broadband infrared radiation are disclosed. The system may include an illumination source comprising a pump source configured to generate pump light and a nonlinear optical (NLO) assembly configured to generate broadband IR radiation in response to the pump light. The system may also include a detector assembly and a set of optics configured to direct the IR radiation onto a sample and direct a portion of the IR radiation reflected and/or scattered from the sample to the detector assembly.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.