Disclosed herein is a method comprising disposing on a first substrate a two-dimensional exfoliatable material; patterning an exfoliatable material using a photoresist in a manner such that a portion of the photoresist remains in contact with the two-dimensional exfoliatable material after the patterning; disposing a polymer layer on the two-dimensional exfoliatable material to form a printing block; contacting a substrate with the printing block; and removing the polymer layer and the photoresist from the printing block to leave behind the patterned exfoliatable material on the substrate.

The present disclosure discloses a method of manufacturing a display panel. The method includes: providing a first substrate, and forming a release layer on the first substrate; forming a thin film transistor driving layer on the first substrate; forming a display element on the first substrate, wherein a part of the display element forms above the release layer and another part of the display element forms above the thin film transistor driving layer; separating the release layer and the first substrate with a laser; removing the release layer and the display element above the release layer, and forming a hollow portion on the first substrate; packaging the display element to form a display panel, wherein the display panel at least includes a first packaging portion; and providing a through hole passing through the display panel at a region on the display panel corresponding to the hollow portion.

This disclosure relates to a photosensitive composition that includes at least one fully imidized polyimide polymer having a weight average molecular weight in the range of about 20,000 Daltons to about 70,000 Daltons; at least one solubility switching compound; at least one photoinitiator; and at least one solvent. The composition is capable of forming a film or a dry film having a dissolution rate of greater than about 0.15 micron/second using cyclopentanone as a developer.

The invention relates to a laser-ablatable mask film for the exposing of relief printing plates and screen printing stencils, comprising at least (i) a dimensionally stable base sheet, (ii) a UV-transparent adhesion layer, and (iii) a laser-ablatable mask layer,
characterized in that the laser-ablatable mask layer (iii) comprises
a) a binder comprising a crosslinked polyvinyl alcohol,
b) a material which absorbs UV/VIS light and IR light, and
c) optionally an inorganic filler.

A photosensitive element 1 comprises a support film 10, a protective film (polypropylene film) 30, and a photosensitive layer 20 which is arranged between the support film 10 and the protective film 30, wherein the protective film 30 has a principal surface 30a at a side of the photosensitive layer 20 and a principal surface 30b at an opposite side of the principal surface 30a, and the principal surface 30a and the principal surface 30b are smooth.

A pattern forming photo-curing layer is heated, thereby enabling quick shaping. A pattern manufacturing apparatus (100) includes a controller (101), a laser projector (102), and a heater (103). The controller (101) controls the laser projector (102) to form a pattern on a pattern forming sheet (130) placed on a stage (140). The laser projector (102) includes an optical engine (121), and the controller (101) controls the laser projector (102) to irradiate the pattern forming sheet (130) with a light beam from the optical engine (121). The heater (103) heats the pattern forming sheet (130).

A structured membrane fabrication method begins with a membrane wafer on a substrate and at least one thin-film on the membrane wafer such that portions of the membrane wafer are exposed. The exposed portions of the membrane wafer and each thin-film are covered with an acetone-inert protectant. Portions of the protectant are etched through to the membrane wafer while each thin-film remains fully covered by the protectant. A handle is coupled to the protectant with a wax that dissolves in acetone. Portions of the substrate are then removed to define and expose a contiguous region of the membrane wafer adjacent to each thin-film and the portions of the protectant so-etched. The wax is exposed to acetone so that it dissolves. The contiguous region of the membrane wafer is then etched through at the portions of the protectant so-etched. The protectant is then removed.

An example flow cell includes a multi-layer stack including a transparent base support; a patterned sacrificial layer over the transparent base support; and a transparent layer over the patterned sacrificial layer. The flow cell further includes first and second functionalized layers over different portions of the transparent layer, wherein at least one of the first and second functionalized layers aligns with a pattern of the patterned sacrificial layer; and first and second primer sets respectively attached to the first and second functionalized layer.

A method of removing a photoresist, a laminate, a method of forming a metallic pattern, a polyimide resin, and a stripper are provided. The method of removing the photoresist includes forming a release layer on a substrate, the release layer having a first surface and a second surface opposite to each other, wherein the first surface of the release layer is in contact with the substrate; forming a photoresist layer on the second surface of the release layer; and removing the release layer and the photoresist layer. The release layer is formed by a polyimide resin. The polyimide resin is obtained by performing a polymerization of tetracarboxylic dianhydrides, diamines, and phenolamines. The diamines include hydroxyfluorinated diamines, benzoic acid diamines, and aminotetramethyldisiloxanes.

A resin composition that reduces a decrease in glass viscosity and makes the glass less likely to be over-sintered, when the resin composition is subjected to sintering together with a conductive layer (in particular, a conductive layer containing Ag). A resin composition includes a glass frit, an inorganic filler, an alkali-soluble resin, a photosensitive monomer, and a photopolymerization initiator, where the rate of decrease in the complex viscosity of the glass frit with 7% by weight or less of Ag added to the glass frit is less than 40% at 900 C. and less than 60% at 926 C., as compared with a case without Ag added.