A material for forming organic film contains (A) compound shown by general formula (1) and/or polymer having repeating unit shown by general formula (4), and (B) organic solvent. In formula (1), AR1, AR2, AR3, AR4, AR5, and AR6 each represent benzene ring or naphthalene ring; R1 represents any group shown in following formula (2); n represents integer of 1 or 2; and W represents divalent organic group having 2-50 carbon atoms. In formula (4), AR1, AR2, AR3, AR4, AR5, AR6, R1, n, and W are as defined above; and R2 and R3 each represent hydrogen atom or organic group having 1-20 carbon atoms, and optionally bond to each other within molecule to form cyclic organic group. An object provides a material for forming organic film to enable high etching resistance and excellent twisting resistance without impairing resin-derived carbon content; and compound and polymer suitable for material for forming organic film. ##STR00001##

A film forming method includes: preparing a substrate including a resist film with an opening formed on a top surface; infiltrating a metal into at least an upper portion of the resist film by supplying a metal-containing gas containing the metal to the substrate; and selectively forming a protective film containing silicon and oxygen on the top surface of the resist film compared to a side surface and a bottom surface of the opening by supplying a precursor gas containing silanol to the substrate.

The non-chemically amplified resist composition which exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically electron beam (EB) lithography and EUV lithography, a laminated film including a resist film obtained from the resist composition. The resist composition comprises a hypervalent bismuth compound, a carboxy group-containing polymer, and a solvent.