Patent classifications
G03F7/70033
Droplet accelerating assembly and extreme ultra-violet lithography apparatus including the same
A droplet accelerating assembly includes an acceleration chamber extending in a first direction parallel to an ejection direction of the droplet, the acceleration chamber having a first side connected to the droplet generator, a second side opposite the first side in the first direction, the second side including a discharge hole, and a fluid flow path, a pressure controller connected to the fluid flow path of the acceleration chamber, the pressure controller being configured to adjust an internal pressure of the acceleration chamber, an electrifier in the acceleration chamber, the electrifier being configured to electrify the droplet ejected by the droplet generator into an electrified droplet, and an accelerator in the acceleration chamber, the accelerator being configured to accelerate the electrified droplet.
LASER INTERFERENCE FRINGE CONTROL FOR HIGHER EUV LIGHT SOURCE AND EUV THROUGHPUT
A method for generating an extreme ultraviolet (EUV) radiation includes simultaneously irradiating two or more target droplets with laser light in an EUV radiation source apparatus to produce EUV radiation and collecting and directing the EUV radiation produced from the two or more target droplet by an imaging mirror.
Pellicle Frame, Pellicle, Pellicle-Attached Exposure Original Plate, Method for Manufacturing Semiconductor, Method for Manufacturing Liquid Crystal Display Plate, and Exposure Method
The present invention provides: a pellicle frame for EUV exposure characterized in that the pellicle frame is provided with at least one ventilation part, and a filter having a porous membrane coated with a resin is attached inside the ventilation part; a pellicle characterized in that a pellicle film is stretched on the pellicle frame; a pellicle-attached exposure original plate for EUV exposure characterized in that the pellicle is attached to the exposure original plate; a method for manufacturing a semiconductor; a method for manufacturing a liquid crystal display plate; and an exposure method. The pellicle frame of the present invention is sufficiently resistant to hydrogen radicals during EUV exposure.
VESSEL FOR A RADIATION SOURCE
A vessel (16) for an EUV radiation source, the vessel comprising a first opening (30) for accessing an interior (32) of the vessel, a first access member (34) configured to allow or prevent access to the interior of the vessel through the first opening, a second opening (36) for accessing the interior of the vessel, the second opening being arranged in the first access member and a second access member (38) arranged on the first access member and configured to allow or prevent access to the interior of the vessel through the second opening.
APPARATUS FOR AND METHOD OF MONITORING DROPLETS IN A DROPLET STREAM
An apparatus for monitoring a stream of droplets of target material for generating a radiation beam in a radiation source, wherein the apparatus comprises: a target material emitter for creating the stream of droplets of target material, wherein the target material emitter comprises a chamber configured for the target material to pass through before forming the stream of droplets; a first transducer configured to generate acoustic pressures in the chamber, and a second transducer configured to sense the acoustic pressures in the chamber.
CIRCULATION MECHANISM AND OPERATION APPARATUS
A circulation mechanism includes a storage section, a supply pipe, a collection pipe, a circulation drive section, and a protective member. The storage section accommodates liquid metal. The supply pipe supplies the liquid metal accommodated in the storage section to a target mechanism. The collection pipe is communicated with the storage section and collects the liquid metal that has been drained away from the target mechanism into the storage section. The circulation drive section allows the liquid metal accommodated in the storage section to move to the supply pipe, and thus circulates the liquid metal to and from the target mechanism. The protective member is disposed to cover a portion of an inner wall of the collection pipe, the portion corresponding to a position at which the liquid metal flowing through the collection pipe collides with the liquid metal accommodated in the storage section.
ADAPTIVE OPTICAL ELEMENT FOR MICROLITHOGRAPHY
An adaptive optical element for microlithography comprises at least one manipulator for changing the shape of an optical surface of the optical element. The manipulator comprises a dielectric medium which is deformable via an electric field, work electrodes for generating the electric field in the dielectric medium, and a measuring electrode for measuring temperature. The measuring electrode is arranged in a direct assemblage with the dielectric medium. The measuring electrode has a temperature-dependent resistance.
Light source, EUV lithography system, and method for performing circuit layout patterning process
A light source for EUV radiation is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel to generate plasma as the EUV radiation. The controller is configured to provide the control signal according to the temperature of the source vessel and droplet positions of the target droplets. When the temperature of the source vessel exceeds a temperature threshold value and a standard deviation of the droplet positions of the target droplets exceeds a first standard deviation threshold value, the controller is configured to provide the control signal to the laser generator, so as to stop providing the first laser pulses.
CALIBRATION SYSTEM FOR AN EXTREME ULTRAVIOLET LIGHT SOURCE
A metrology system includes a light beam metrology apparatus configured to sense one or more aspects of an amplified light beam and to make adjustments to the amplified light beam based on the sensed one or more aspects; a target metrology apparatus configured to measure one or more properties of a modified target after a target has interacted with the amplified light beam, and to determine a moment when the modified target achieves a reference calibration state; and a control apparatus configured to: receive the reference calibration state and the moment at which the reference calibration state is achieved from the target metrology apparatus; determine a light beam calibration state of the amplified light beam based on the received reference calibration state and the moment at which the reference calibration state is achieved; and provide the light beam calibration state to the light beam metrology apparatus.
UNDERCUT ELECTRODES FOR A GAS DISCHARGE LASER CHAMBER
Provided is a light source apparatus and an electrode design for use in a discharge chamber of the light source apparatus. The discharge chamber is configured to hold a gas discharge medium configured to output a light beam. The light source apparatus include a pair of opposed electrodes configured to excite a gas medium to form a discharge plasma. At least one electrode of the pair of opposing electrodes may include recessed portions or hollowed-out portions at each end of the electrode, or at other suitable locations. The disclosed electrode structures improve uniformity of the erosion profile of the electrodes, significantly extending the lifespan of the discharge chamber by redistributing the discharge particle flux through the electrode with an optimized design of the electrode geometry, as the local discharge particle flux is reduced at the recessed portions.