A filter assembly, for example for a control loop for controlling the position of at least one element, comprises first and second filters. The first filter suppresses an undesired component in a signal to be filtered. The first filter produces a first signal delay in a first frequency range. The second filter produces a second signal delay in the first frequency range. The second signal delay at least partly compensates the first signal delay.

A method for localizing an abnormality in a travel path of an optical component in or for a lithography apparatus includes: a) moving the optical component in at least one first degree of freedom; b) detecting a movement (R.sub.z) of the optical component and/or a force acting on the optical component in at least one second degree of freedom; and c) localizing the abnormality as a function of the movement detected in b) and/or the force detected in b).

A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.

A semiconductor lithography projection exposure apparatus includes a sensor reference including reference elements. The apparatus also includes an optical element, which includes a main body comprising receiving elements receiving the reference elements. The optical element further includes a referential surface that is an optically active surface of the optical element. The reference elements are arranged to determine a position and an orientation of the optical element. A method includes aligning a sensor reference with respect to a referential surface in a semiconductor lithography projection exposure apparatus.

An exposure apparatus includes an illumination optical system for illuminating an original including a periodic pattern, a projection optical system for forming an image of the original on a substrate, a controller configured to cause light from the illumination optical system to be obliquely incident on the original such that a light intensity distribution which is line-symmetric with respect to a line, passing through an origin of a pupil region of the projection optical system and orthogonal to a periodic direction of the periodic pattern, is formed in the pupil region by diffracted light beams including diffracted light of not lower than 2nd-order from the periodic pattern, and to control exposure of the substrate such that each point in a shot region of the substrate is exposed in not less than two focus states.

A rasterization method of patterns with periodic components for SLMs is presented, comprising obtaining (S10) of an original pattern, having a periodicity. A first pattern main period is determined (S21). Image area and a first pitch of imaged elements are obtained (S31). The original pattern is scaled (S41) by a first raster scaling factor. The scaled pattern is cropped (S51) to comprise a first integer number of repetitions of the pattern items presenting a periodicity in the first direction that is covered by the image area, giving a rasterized pattern adapted to the intended pattern generator. The rasterized pattern is associated with data representing the first scaling factor. A writing method comprises obtaining of the rasterized pattern. Elements of the SLM in the pattern generator falling outside the rasterized pattern are set to be disabled. The rasterized pattern is written with an optical scaling to a target surface.

An exposure method of performing an exposure operation of exposing a substrate via a projection optical system is provided. The method includes executing, in an exposure period in which the exposure operation is performed, aberration correction of the projection optical system to correct an aberration generated by performing the exposure operation, measuring, in a non-exposure period succeeding the exposure period, in which the exposure operation is not performed, an aberration of the projection optical system, and correcting the aberration of the projection optical system using a correction amount adjusted based on a result of the measurement so as to reduce a correction residual in the aberration correction of the projection optical system.

Embodiments disclosed herein include lithographic patterning systems for non-orthogonal patterning and devices formed with such patterning. In an embodiment, a lithographic patterning system comprises an actinic radiation source, where the actinic radiation source is configured to propagate light along an optical axis. In an embodiment, the lithographic patterning system further comprises a mask mount, where the mask mount is configurable to orient a surface of a mask at a first angle with respect to the optical axis. In an embodiment, the lithographic patterning system further comprises a lens module, and a substrate mount, where the substrate mount is configurable to orient a surface of a substrate at a second angle with respect to the optical axis.

A magnification adjustable projection system includes an imaging system having a first pair of cylindrical lens plates located within an object or image space. The first pair of cylindrical lens plates includes a first cylindrical lens plate axially movable relative to a second cylindrical lens plate. A second pair of cylindrical lens plates is located within the object or image space in optical alignment with the first pair of cylindrical lens plates. The second pair of cylindrical lens plates includes a third cylindrical lens plate axially movable relative to a fourth cylindrical lens plates. First and second actuators adjusts distances between the first and second cylindrical lens plates and between the third and fourth cylindrical lens plates. The first and second pairs of cylindrical lens plates have first and second cylindrical transverse axes that are approximately 45° relative to each other.

A method for measuring a substrate for semiconductor lithography using a measuring device, wherein the measuring device comprises a recording device for capturing at least a partial region of the substrate and, wherein the distance between the substrate and an imaging optical unit of the recording device is varied while the partial region is captured by the recording device.