The invention discloses a sub-nanoscale high-precision lithography writing field stitching method. A photosensitive resist layer is coated on the surface of the wafer to be exposed; after the surface of the photosensitive resist layer is exposed, the exposed pattern will generate a tiny concave-convex structure; the concave-convex structure patterns are identified with a nano contact sensor and can be used as in-situ alignment coordinate markers; by comparing the position coordinates of the writing field before and after exposure and wafer moving, the deviations of stitching can be calculated, and an high-precision lithography stitching of the wafer is performed in a negative feedback control mode, so that the disadvantages of the existing non-in-situ, far-from-writing field and the poor performance of stitching precision in blind type open-loop lithography technology due to the influence of mechanical motion precision of a wafer workbench and long-time drift of an electron beam are overcome.

A lithographic system and a method for exposing a substrate are provided. The method includes providing a plurality of mask sets. Each mask set includes complementary masks corresponding to a respective pattern. The method further comprises exposing the substrate with the plurality of mask sets. A stitch location between the complementary masks of a mask set is different than a stitch location between the complementary masks of each other mask set of the plurality of mask sets.

A touch sensor comprises a group pattern having a sensing cell part including a plurality of sensing cell groups in which a plurality of sensing cells are electrically connected and a wiring part formed outside the sensing cell part. The wiring part includes a first sub-wiring part and a second sub-wiring part. The first sub-wiring part has a drawing wire electrically connected to a sensing cell at one end of the sensing cell group. The second sub-wiring part is disposed outside the first sub-wiring part and has a non-drawing wire not electrically connected to the sensing cell part. The non-drawing wires are provided as many as the number of unit patterns repeatedly formed to constitute a large-area touch sensor minus one.

Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.

A method for characterizing a patterning process, the method including obtaining a plurality of values of stitching errors made along one or more boundaries between at least two patterned adjacent fields or sub-fields on a substrate; and fitting, using a hardware computer system, a distortion model to the plurality of values to obtain a fingerprint representing deformation of a field or sub-field out of the at least two patterned adjacent fields or sub-fields.

A system for exposing a material with images includes an exposure table and an electronic light projector arranged above the exposure table. The system is adapted to project images towards a material arranged at the exposure table. The electronic light projector and the exposure table are configured to be moved relative to each other during exposure. The electronic light projector is connected to a projector control unit configured to provide a sequence of images to be exposed represented by image data and superimpose a static image pattern onto the edge sections of the images to be exposed, resulting in a sequence of combined images. The width of the static image pattern is slimmer than the image to be exposed. The electronic light projector is configured to expose the combined images sequentially onto the material.

A method of manufacturing a display device including: preparing a substrate having a display area and a non-display area; and forming an alignment mark disposed in the non-display area of the substrate. The alignment mark includes a quadrangular-shaped center portion and a plurality of measurement portions that surround the center portion, the plurality of measurement portions including four or more measurement portions, and each of the measurement portions including sides that are parallel with two sides of the quadrangular-shaped center portion.

A reticle-stitched integrated circuit is provided. The reticle-stitched integrated circuit extends over a first die area and a second die area of an integrated circuit wafer. While individually the first die area and the second die area are within their respective reticle limits, collectively the first die area and the second die area exceed the reticle limit. A first layer of the reticle-stitched integrated circuit may have communication wires that remain exclusively in only one of the first die area and the second die area. A second layer of the reticle-stitched integrated circuit may have communication wires that overlap the first die area and the second die area, thereby allowing communication between the two die areas and enabling the reticle-stitched integrated circuit to exceed the limit of the reticle.

An exposure mask includes a base layer including a first area and a second area spaced apart from a first area in a first direction, a first inspection transmission pattern defined in a first area of a base layer and arranged in a ring shape having at least one connection part in plan view, and a second inspection transmission pattern defined in a second area of a base layer and arranged in a polygonal shape or a circular shape in plan view.

Embodiments of the present disclosure relate to methods for positioning masks in a propagation direction of a light source. The masks correspond to a pattern to be written into a photoresist layer of a substrate. The masks are positioned by stitching a first mask and a second mask. The first mask includes a set of first features having first feature extensions extending therefrom at first feature interfaces. The second mask includes a set of second features having second feature extensions extending therefrom at second feature interfaces. Each first feature extension stitches with each corresponding second feature extension to form each stitched portion of a first stitched portion of the first pair of masks. The stitched portion of the first pair of masks defines a portion of the pattern to be written into the photoresist layer.