In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.

A temperature control apparatus is located at an interface between a coating and developing machine and a lithography machine, and includes a temperature detecting device and a temperature control device. The temperature detecting device is connected to the temperature control device. The temperature detecting device is configured to detect an actual temperature at the interface in real time. The temperature control device is configured to control the actual temperature at the interface to reach a target temperature when the actual temperature is not equal to the target temperature.

A method for inspecting an extreme ultraviolet (EUV) light source includes: removing a collector mirror of the EUV light source from a collector chamber; installing an inspection apparatus within the collector chamber, the apparatus including a selectively extendable and retractable member and a camera at one end of the member; operating a first actuator to extend the member along a path through the interior chamber of the EUV light source, thereby moving the camera to a given position within the interior chamber of the EUV light source; operating a second actuator to pan the camera about an axis of rotation, thereby establishing a given camera orientation within the interior of the EUV light source; and, capturing an image of the interior chamber of the EUV light source with the camera while the camera is at the given position and orientation established by the operation of the first and second actuators.

A method of processing a wafer is provided. The method includes providing a reference plate below the wafer. The reference plate includes a reference pattern. The reference plate is imaged to capture an image of the reference pattern by directing light through the wafer. A first pattern is aligned using the image of the reference pattern. The first pattern is applied to a working surface of the wafer based on the aligning.

An apparatus for measuring a height of a substrate for processing in a lithographic apparatus is disclosed. The apparatus comprises a first sensor for sensing a height of the substrate over a first area. The apparatus also comprises a second sensor for sensing a height of the substrate over a second area. The apparatus further comprises a processor adapted to normalize first data corresponding to a signal from the first sensor with a second sensor footprint to produce a first normalized height data, and to normalize second data corresponding to a signal from the second sensor with a first sensor footprint to produce a second normalized height data. The processor is adapted to determine a correction to a measured height of the substrate based on a difference between the first and second normalized height data.

The present application provides an exposure machine, relates to semiconductor integrated circuit manufacturing technologies. The exposure machine includes a machine platform, a shielding device, and a drive device; the machine platform is provided with a recess portion, the recess portion has a top opening, a base and a placement table are disposed in the recess portion, the placement table is configured to carry a mask carrier, and the mask carrier can be placed on the placement table through the top opening; and the machine platform is further provided with a drive device and a movable shielding device, when the shielding device is at an initial position, the shielding device covers the top opening, and when the mask carrier needs to be placed on the placement table through the top opening, the drive device opens the shielding device to expose the top opening.

A residual gas analyser (40) for analysis of a residual gas (30), in particular a residual gas in an EUV lithography system (1), includes an inlet system (41) for admission of the residual gas from a vacuum environment (27a) into the residual gas analyser, and a mass analyser (43) having a detector (44) for detecting ionized constituents (30a) of the residual gas. The residual gas analyser includes an ion transfer device (42) for transferring the ionized constituents of the residual gas to the mass analyser, the ion transfer device having an ion filtering device (45) configured for filtering at least one ionic constituent (30a) of the residual gas. Also disclosed is an EUV lithography system, in particular an EUV lithography apparatus, which includes at least one residual gas analyser configured as indicated above for analysing a residual gas in a vacuum environment of the EUV lithography system.

A method of assembling a facet mirror of an optical system, in which facets of the facet mirror are imaged onto a field plane of the optical system, includes: a) determining positions of the facets of the facet mirror relative to interfaces of the facet mirror, with the aid of which the facet mirror is able to be connected to a support structure; b) calculating an actual position of an object field of the optical system arising for the facet mirror in the field plane; and c) arranging spacers between the interfaces and the support structure so that the object field in the field plane is brought from the calculated actual position to a target position.

An extreme ultraviolet light generation system includes a chamber, a target supply unit supplying a target substance to a plasma generation region including a first point in the chamber, a window allowing pulse laser light with which the target substance is irradiated to pass therethrough, an EUV light concentrating mirror concentrating extreme ultraviolet light generated at the first point on a second point, a planar mirror arranged on an optical path of the extreme ultraviolet light reflected by the EUV light concentrating mirror and between the first and second points, an actuator causing the second point to be switched between a first position and a second position, a connection portion connectable to an external apparatus, a first EUV measurement unit on which the extreme ultraviolet light having passed through the second position is incident, and a processor controlling the actuator based on a signal from the external apparatus.

A radiation system comprising a radiation source and a radiation conditioning apparatus, wherein the radiation source is configured to provide a radiation beam with wavelengths which extend from ultraviolet to infrared, and wherein the radiation conditioning apparatus is configured to separate the radiation beam into at least two beam portions and is further configured to condition the at least two beam portions differently.