A method for creating a vacuum in a load lock chamber is provided. The method includes building an air-tight environment in the load lock chamber. The method further includes reducing the pressure in a gas tank to a predetermined vacuum pressure. The method also includes enabling an exchange of gas between the load lock chamber and the gas tank when the pressure in the gas tank is at the predetermined vacuum pressure so as to reduce the pressure in the load lock chamber to an adjusted vacuum pressure.

Embodiments described herein relate to a dynamically controlled lens used in lithography tools. Multiple regions of the dynamic lens can be used to transmit a radiation beam for lithography process. By allowing multiple regions to transmit the radiation beam, the dynamically controlled lens can have an extended life cycle compared to conventional fixed lens. The dynamically controlled lens can be replaced or exchanged at a lower frequency, thus, improving efficiency of the lithography tools and reducing production cost.

A lithographic apparatus having a first outlet to provide a thermally conditioned fluid with a first flow characteristic to at least part of a sensor beam path, and a second outlet associated with the first outlet and to provide a thermally conditioned fluid with a second flow characteristic, different to the first flow characteristic, adjacent the thermally conditioned fluid from the first outlet.

A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.

Particle trap assemblies configured to reduce the possibility of contaminant particles with a large range of sizes, materials, travel speeds and angles of incidence reaching a particle-sensitive environment. The particle trap may be a gap geometric particle trap located between a stationary part and a movable part of the lithography apparatus. The particle trap may also be a surface geometric particle trap located on a surface of a particle sensitive environment in lithography or metrology apparatus.

In a carrier system, a chuck unit is used to hold a placed wafer from above, and vertical-motion pins use suction to hold the wafer from below. Then, the chuck unit and the vertical-motion pins are subsequently lowered until a bottom surface of the wafer comes into contact with a wafer table. During the lowering, the holding force exerted by the chuck unit and the arrangement of chuck members are optimally adjusted such that, as a result of the restraint of the wafer by the chuck unit and the vertical-motion pins, localized surplus-restraint is imparted to the wafer, and warping does not occur.

A method is provided. The method includes steps as follows. EUV light is generated. A collector is used to gather the EUV light onto a first optical reflector. The first optical reflector is used to reflect the EUV light to a reticle, so as to impart the EUV light with a pattern. A second optical reflector is used to reflect the EUV light with the pattern onto a wafer. The first optical reflector is rotated.

An extreme ultraviolet (EUV) lithography system includes an extreme ultraviolet (EUV) radiation source to emit EUV radiation, a collector for collecting the EUV radiation and focusing the EUV radiation, a reticle stage for supporting a reticle including a pellicle for exposure to the EUV radiation, and at least one sensor configured to detect particles generated due to breakage of the pellicle.

A lens anti-contamination device is disclosed, including a first device (300) and a second device (400) connected to the first device (300), the first device (300) being closer to a lens (100) relative to the second device (400), wherein the first device (300) is used to output protective layer gas, and the protective layer gas is enabled to uniformly flow in close contact with the lower surface of the lens (100) through a nozzle (330), such that the contaminated lens (100) can be cleaned and a protective layer is funned to prevent the lens from being contaminated again; the second device (400) is used to take away gas close to a contamination source, and the contamination gas enters an annular cavity (420) through small holes (410) and is exhausted into a distant environment through the suction and exhaust power of an exhaust passage (200). A lens anti-contamination method is also disclosed. Before exposure, the first device (300) is turned on and then the second device (400) is turned on; and after 12 hours after exposure, the second device (400) may be turned off. This device and method can better solve the problem that organic matters in photoresist are volatilized and contaminate the lens, it is simple to mount, the service life is long, the cost is low, the reliability is high, and it guarantees that contaminants are fully removed without entering the object lens.

Embodiments described herein relate to a dynamically controlled lens used in lithography tools. Multiple regions of the dynamic lens can be used to transmit a radiation beam for lithography process. By allowing multiple regions to transmit the radiation beam, the dynamically controlled lens can have an extended life cycle compared to conventional fixed lens. The dynamically controlled lens can be replaced or exchanged at a lower frequency, thus, improving efficiency of the lithography tools and reducing production cost.