A method of forming conductive lines in a circuit is disclosed. The method includes arranging a plurality of signal traces in a first set of signal traces and a second set of signal traces, fabricating, using a first mask, a first conductive line for a first signal trace of the first set of signal traces and fabricating, using a second mask, a second conductive line for a second signal trace of the second set of signal traces. Each signal trace of the first set of signal traces has a first width. Each signal trace of the second set of signal traces has a second width different from the first width. The arranging is based on at least a length of a signal trace of the plurality of signal traces.

A method for improving OpenCL hardware execution efficiency described in this invention comprises the following steps: compiling a kernel implemented in OpenCL, generating Verilog code with a high-level synthesis tool; analyzing the interfaces of auto-generated Verilog code, recording signals, timing sequence, and function of the interfaces; manually modifying and optimizing the Verilog code; inserting a file replacement command in the script responsible for flow control, replacing the auto-generated code with the optimized Verilog code; rerunning OpenCL compiler and generating an ultimate FPGA configuration file. The invention makes manual optimization of the auto-generated Verilog code becomes possible, by parsing the compilation flow of OpenCL environment and analyzing the structure and interfaces of the auto-generated Verilog code. It promotes the performance of kernels, by increasing working frequency, achieving more parallelism and taking full advantages of FPGA hardware resources, and improves the execution efficiency of OpenCL on FPGA platform significantly.

A semiconductor device includes a first and a second power rails extending in a row direction, a third power rail extending in the row direction between the first and second power rail, and a first cell arranged between the first second power rails. A cell height of the first cell in a column direction perpendicular to the row direction is equal to a pitch between the first and second power rails. The semiconductor device also includes a second cell arranged between the first and third power rails. A cell height of the second cell in the column direction is equal to a pitch between the first and third power rails. A first active region of the first cell includes a first width in the column direction greater than a second width, in the column direction, of a second active region in the second cell.

In certain embodiments, a method for designing a semiconductor device includes generating a 2D design for fabricating chiplets on a substrate. The chiplets are component levels for a multi-chip integrated circuit. The 2D design includes a first layout for alignment features and semiconductor structures to be formed on a first surface of a first chiplet and a second layout for alignment features and semiconductor structures to be formed on a first surface of a second chiplet. The first and second chiplets are adjacent on the substrate. The second layout is a mirror image of the first layout across a reference line shared by the first and second chiplets. The first surfaces of the first and second chiplets are both either top or bottom surfaces. The method further includes generating one or more photomasks according to the design.

Implementations disclosed herein may include receiving from a user a selection of at least one die, a package type, and at least one test condition; generating, using a processor, a product die configuration and a product package configuration using a predictive modeling module and the at least one die and the package type; generating a graphic design system file; generating a package bonding diagram; generating a product spice model of the discrete device product using a technology computer aided design module; generating, using a processor, one or more datasheet characteristics of the discrete device product with the product SPICE model; generating a product datasheet for the discrete device product using the graphic design system file; and using a second interface generated by a computing device to provide access to the graphic design system file, the package bonding diagram, the product datasheet, and the product SPICE model.

A method of designing a layout of a semiconductor integrated circuit, including receiving input data defining the semiconductor integrated circuit; determining a first layout of the semiconductor integrated circuit by performing a placement and routing (P&R) procedure based on the input data, wherein the first layout includes a plurality of blocks, a plurality of standard cells, a plurality of power wirings, a plurality of ground wirings, a plurality of clock wirings, and a plurality of signal wirings; selecting a target region of the first layout, wherein the target region is capable of accommodating at least one additional power wiring and at least one additional ground wiring; and determining a second layout of the semiconductor integrated circuit by modifying the first layout to include the at least one additional power wiring and the at least one additional ground wiring in the target region.

A method of designing a layout of a semiconductor integrated circuit, including receiving input data defining the semiconductor integrated circuit; determining a first layout of the semiconductor integrated circuit by performing a placement and routing (P&R) procedure based on the input data, wherein the first layout includes a plurality of blocks, a plurality of standard cells, a plurality of power wirings, a plurality of ground wirings, a plurality of clock wirings, and a plurality of signal wirings; selecting a target region of the first layout, wherein the target region is capable of accommodating at least one additional power wiring and at least one additional ground wiring; and determining a second layout of the semiconductor integrated circuit by modifying the first layout to include the at least one additional power wiring and the at least one additional ground wiring in the target region.

A device is disclosed. The cell block includes a pin disposed at a Nth metal layer in a cell layout. The first metal interconnect is disposed at a (N+1)th metal layer above the Nth metal layer and stacked over the pin, and electrically coupled to the pin. The second interconnects are disposed at a (N+2)th metal layer and stacked over the first metal interconnect, and parallel to each other. The second metal interconnects are electrically coupled to the first metal interconnect, and forming an equivalent tapping point of the pin of the cell block. The equivalent tapping point and the pin are vertically overlapped with each other, and fabrication of the device is initiated after a DRC or a SEM simulation test is passed. A first via connects the first metal interconnect to the pin, and the at least one first metal interconnect is perpendicular to the pin.

A device is disclosed. The cell block includes a pin disposed at a Nth metal layer in a cell layout. The first metal interconnect is disposed at a (N+1)th metal layer above the Nth metal layer and stacked over the pin, and electrically coupled to the pin. The second interconnects are disposed at a (N+2)th metal layer and stacked over the first metal interconnect, and parallel to each other. The second metal interconnects are electrically coupled to the first metal interconnect, and forming an equivalent tapping point of the pin of the cell block. The equivalent tapping point and the pin are vertically overlapped with each other, and fabrication of the device is initiated after a DRC or a SEM simulation test is passed. A first via connects the first metal interconnect to the pin, and the at least one first metal interconnect is perpendicular to the pin.

An integrated circuit (IC) device includes a substrate, and a cell over the substrate. The cell includes at least one active region and at least one gate region extending across the at least one active region. The cell further includes at least one input/output (IO) pattern configured to electrically couple one or more of the at least one active region and the at least one gate region to external circuitry outside the cell. The at least one IO pattern extends obliquely to both the at least one active region and the at least one gate region.