Patent classifications
G11C13/043
SPIN TRANSPORT ELECTRONIC DEVICE
An electronic device is presented, the device comprises: a spin accumulating structure; a spin selective filter electrically connected at a first end thereof to a first surface of said spin accumulating layer structure; a charge carrier source attached to said spin selective filter at a second end of the spin selective filter; wherein the spin selective filter is configured to allow passage of the charge carriers having a predetermined spin orientation from the charge carrier source to the spin accumulating structure, thereby causing a variation of spin distribution of the charge carriers within the spin accumulating structure. The device comprises further at least first and second pairs of electrical contacts which are connected to the spin accumulating structure and define first and second electrical paths through said spin accumulating structure, said first and second electrical paths intersecting within said spin accumulating structure. The device including a circuit configured to apply an electrical current between the first pair of electrical contacts and to detect the variation of spin-distribution of charge carriers within the spin accumulating structure by determining electrical voltage between the second pair of electrical contacts in response to the applied electrical current.
Nanosecond non-destructively erasable magnetoresistive random-access memory
An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell. A laser output of the VCSEL is directed toward the MRAM cell.
NANOSECOND NON-DESTRUCTIVELY ERASABLE MAGNETORESISTIVE RANDOM-ACCESS MEMORY
An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell. A laser output of the VCSEL is directed toward the MRAM cell.
Organic magnetoelectroluminescence for transduction between magnetic and optical information
An optoelectronic device which can read magnetically stored information, and convert it into optical light signals using organic or plastic semiconductors is described. Such a device may use OLEDs, and may be termed an organic magneto-optic transducer (OMOT). An OMOT device can read magnetically stored information, and convert it into optical light signals. The OMOT may provide benefits such as non-volatile storage, flexible films, reduced cost, and operation at room temperature.