Methods, apparatuses, and systems for repairing defective memory cells in regions of a memory array associated with high or low priority levels are disclosed. A repair address generator may be configured to generate a memory address map for repair (e.g., blowing fuses at a fuse circuit), depending on whether certain applications may operate at a high priority level indicative of a low bit error rate or a low priority level indicative of a higher bit error rate. For example, a specified error rate associated with a low priority level may correspond to a threshold error rate for certain applications, such as a neural network application that stores trained weights. Such neural network applications may access trained weights being partially stored in defective memory cells, with the least significant bits of such trained weights being stored in defective memory cells that are not repaired according to the memory address map.

A processing device, operatively coupled with the memory device, is configured to perform an operation on a page of a plurality of pages of a data unit of the memory device to modify data on the page. The processing device also determines a first operation execution time of the page upon performing the operation on the page of the data unit. The processing device further determines whether the first operation execution time satisfies a condition that is based on a predetermined second operation execution time, the predetermined second operation execution time is indicative of lack of defect in at least one other data unit. Lastly, responsive to determining that the first operation execution time satisfies the condition, the processing device performs a scan operation of at least a subset of the plurality of pages of the data unit to decide whether the data unit has a defect.

Apparatus and methods are provided for operating a non-volatile memory module. In an example, a method can include filling a first plurality of pages of a first non-volatile memory with first data from a first data lane that includes a first volatile memory device, and filling a second plurality of pages of the first non-volatile memory device with second data from a second data lane that includes a second volatile memory device. In certain examples, the first plurality of pages does not include data from the second data lane.

A memory device includes a plurality of planes. A method of programming the memory device includes applying a first program pulse to one or more memory cells of a first plane of the plurality of planes, verifying whether each one of the memory cells reaches a predetermined program state, and in response to a preset number of the memory cells in the first plane failing to reach the predetermined program state after the memory cells being verified for a predetermined number of times, bypassing the first plane when applying a second program pulse after the first program pulse.

Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

A first pool of blocks of a memory device is determined, wherein blocks of the first pool are associated with storing system data at a single bit per memory cell. A second pool of blocks of the memory device is determined, wherein blocks of the second pool are associated with storing user data at a plurality of bits per memory cell. In response to detecting a failure associated with a particular block of the second pool of blocks, the particular block is added to the first pool of blocks.

A product, system, and/or method of managing memory media that includes: determining whether the memory system is low on one or more ready-to-use (RTU) Block Stripes needed to form a RTU Block Stripe Set, wherein the memory media has a plurality of Planes in each Die, all the memory media Blocks in each Block Stripe are from the same Die # and the same Plane #, each Block Stripe Set is formed of a plurality of Block Stripes all from the same Die #, and all the Blocks in each RTU Block Stripe Set have been subject to the removal process and the erasure process. The product, system, and/or method includes: establishing a pending request for a removal process and/or an erasure process for one or more determined Die #/Plane # combinations; and prioritizing in the one or more determined Die #/Plane # combinations one or more memory media Blocks for the removal and/or erasure process.

An apparatus includes a media management superblock component. The media management superblock component determines that a quantity of blocks of a superblock of a non-volatile memory array are bad blocks. The media management superblock component compares the quantity of bad blocks to a bad block criteria. The media management superblock component writes host data to the superblock with the quantity of bad blocks in response to the quantity of bad blocks meeting the bad block criteria.

Apparatus and methods are provided for operating a non-volatile memory module. In an example, a method can include filling a first plurality of pages of a first non-volatile memory with first data from a first data lane that includes a first volatile memory device, and filling a second plurality of pages of the first non-volatile memory device with second data from a second data lane that includes a second volatile memory device. In certain examples, the first plurality of pages does not include data from the second data lane.

A memory device includes a plurality of planes. A method of programming the memory device includes applying a first program pulse to one or more memory cells of a first plane of the plurality of planes, verifying whether each one of the memory cells reaches a predetermined program state, and in response to a preset number of the memory cells in the first plane failing to reach the predetermined program state after the memory cells being verified for a predetermined number of times, bypassing the first plane when applying a second program pulse after the first program pulse.