A system comprising a light source, and a retention device configured to receive and retain a sample for measurement. The system includes a detector. An optical path couples light between the light source, the sample when present, and the detector. An optical objective is configured to couple light from the light source to the sample when present, and couple reflected light to the detector. A controller is configured to automatically control focus and/or beam path of the light directed by the optical objective to the sample when present. The detector is configured to output data representing a film thickness and a surface profile of the sample when present.

Implementations disclosed describe an optical inspection device comprising a source of light to direct a light beam to a location on a surface of a wafer, the wafer being transported from a processing chamber, wherein the light beam is to generate, a reflected light, an optical sensor to collect a first data representative of a direction of the first reflected light, collect a second data representative of a plurality of values characterizing intensity of the reflected light at a corresponding one of a plurality of wavelengths, and a processing device, in communication with the optical sensor, to determine, using the first data, a position of the surface of the wafer; retrieve calibration data, and determine, using the position of the surface of the wafer, the second data, and the calibration data, a characteristic representative of a quality of the wafer.

Disclosed are optical computing devices that employ birefringent optical elements configured for use in optical computing devices. One optical computing device includes a polarizer configured to generate at least x polarized light and y polarized light, a birefringent integrated computational element configured to optically interact with a substance and the polarizer, thereby generating optically interacted light, and at least one detector arranged to receive the optically interacted light and generate an output signal corresponding to a characteristic of the substance.

Non-contacting caliper measurements of free-standing sheets detect mid-IR interferometric fringes created by the reflection of light from the top and bottom surfaces of the sheet. The technique includes directing a laser beam at a selected angle of incidence onto a single spot on the exposed outer surface and scanning the laser beam through a selected wavelength range as the laser beam is directed onto the exposed outer surface and measuring the intensity of an interference pattern that forms from the superposition of radiation that is reflected from the exposed outer surface and from the inner surface. Alternatively, the intensity of an interference pattern formed from the superposition of radiation that is directly transmitted through the web and radiation that is transmitted through the web after internal reflections from the internal surfaces of the web. Thickness can be extracted from the fringe separation in the interference pattern.

A plasma processing method to detect and process a thickness of the processing target film with high accuracy when a fine shape of the semiconductor wafer surface varies, including detecting a state of a processing target film of a processing target material that is processed inside a vacuum processing chamber; detecing light emission of the plasma; obtaining a differential waveform data of the light emission of the plasma; storing a plurality of pieces of differential waveform pattern data in advance; calculating an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained and the plurality of pieces of differential waveform pattern data stored; and determining an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated.

An image capturing apparatus for capturing an image of a workpiece held on a chuck table includes a camera, an objective lens having a minute hole defined centrally therein and disposed in facing relation to the workpiece held on the chuck table, an optical fiber having an end inserted in the minute hole in the objective lens, a light source optically coupled to another end of the optical fiber, and a beam splitter disposed in the optical fiber for branching off returning light reflected by the workpiece held on the chuck table. The image capturing apparatus further includes a calculating section for calculating a value representing a height or a thickness of the workpiece on the basis of the returning light branched off by the beam splitter, and a focusing mechanism for focusing the objective lens on the workpiece on the basis of the value calculated by the calculating section.

A thickness estimation method may include: obtaining a test spectrum image; obtaining test spectrum data; measuring a thickness of a test layer formed on the test substrate at the plurality of positions; generating a regression analysis model using a correlation between the thickness of the test layer and the test spectrum data; obtaining a spectrum image; and estimating a thickness of a target layer over the entire area of the semiconductor substrate by applying the spectrum image to the regression analysis model. The thickness corresponding to the entire area of the semiconductor substrate that is being transferred is estimated using the thickness estimation method according to an exemplary embodiment in the present disclosure, such that whether or not processing is normally performed may be examined without requiring a separate time. In addition, an examination result may be feedbacked to processing equipment to improve production yield.

A spectroscopic measuring apparatus and method are provided. The apparatus includes a first light source, object, microlens, and imaging lenses, an optical fiber, a spectrometer and a position controller. The object lens to allows light from the first light source to be incident on a stage configured to support a measurement object. The microlens is disposed between the object lens and the stage. The imaging lens images light reflected from the measurement object. The optical fiber has an input terminal disposed on a first image plane of the imaging lens. The spectrometer is disposed at an output terminal of the optical fiber. The position controller controls positions of the object lens, the microlens, and the optical fiber, and adjusts the position of the object lens so that a focus of the object lens is positioned at a virtual image position of a virtual image generated by the microlens.

In the embodiment in association with the present disclosure, an apparatus and method for multilayer thin film thickness measurement using single-shot angle-resolved spectral reflectometry are provided which allow simultaneously obtaining the absolute reflectance and phase data of a measurement object over a broad wavelength range and wide incident angle according to various polarization states by a single-shot measurement.

An arrangement of a thermal device and a surface reflecting and/or scattering electromagnetic radiation in the inner part of the thermal device. A source of electromagnetic radiation is arranged at a first distance (L1) from the surface, and a detector of electromagnetic radiation is arranged at a second distance (L2) from the surface. The source is configured to emit radiation to the surface, which is reflected and/or scattered from the surface as reflected radiation. The detector receives reflected radiation; and the processing unit determines data dependent on the first and/or second distance by the emitted and reflected radiation. A wall of the thermal device has a window or aperture for emitting an optical signal from the light source to the surface. An electromagnetic distance measurement device measures the thickness or the increase in the thickness of a contamination layer from a thermal device.