An object is to allow for simple measurement of a bump height. There is provided a device for measuring a bump height comprising: a light sensor provided with a light source and a light-receiving element and configured to irradiate a substrate including a seed layer, a resist layer formed on the seed layer and a bump formed in an opening of the resist layer, with light emitted from the light source and to detect reflected light that is reflected from the seed layer via the resist layer and reflected light that is reflected from the bump, by the light-receiving element; and a control device configured to calculate a height of the bump relative to the seed layer, based on the reflected light from the seed layer and the reflected light from the bump and to subtract an error caused by a refractive index of the resist layer from the height of the bump calculated based on the reflected lights, so as to correct the height of the bump.

The present invention provides a reflective condensing interferometer for focusing on a preset focus. The reflective condensing interferometer includes a concave mirror set, a convex mirror, a light splitting element, and a reflecting element. The concave mirror set has first and second concave surface portions which are oppositely located on two sides of a central axis passing through the preset focus and are concave on a surface facing the central axis and the preset focus. Light is preset to be incident in parallel to the central axis in use. The convex mirror is disposed between the concave mirror set and the preset focus on the central axis, and is convex away from the preset focus. The light splitting element vertically intersects with the central axis between the convex mirror and the preset focus. The reflecting element is disposed between the light splitting element and the convex mirror.

A measurement system is provided for use in optical metrology measurements. The measurement system comprises a control system which processes raw measured data indicative of spectral interferometric signals measured on a sample in response to illuminating electromagnetic field incident onto a top portion of the sample and comprising at least one spectral range to which said sample is substantially not absorbing. The processing comprises: extracting, from the raw measured data, a portion of spectral interferometric signals describing signal intensity variation with change of optical path difference during interferometric measurements, the extracted signal portion being independent of interferometric signals returned from a bottom portion of the sample in response to said illuminating electromagnetic field; and directly determining, from said extracted portion, both spectral amplitude and phase of reflection of the electromagnetic field from the top portion of the sample, thereby determining measured spectral signature characterizing the SA, SC, SD, SE, SG, SK, SL, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, WS, ZA, ZM, ZW.

Methods, apparatus, and systems are provided herein for processing a substrate. Generally, the processing involves Spacer-on-Spacer (SoS) Self-Aligned Quadruple Patterning (SAQP) techniques. The disclosed techniques provide a novel process flow that reduces defects by ensuring that cores are not removed from the substrate until the substrate is transferred to a deposition chamber used to deposit a second spacer layer. This reduces or eliminates the risk of structural damage to features on the substrate while the substrate is being transferred or cleaned. Such structural damage is common when the cores are removed from the substrate prior to cleaning and transfer.

Systems and methods for unwrapping a phase map are disclosed. Such systems and methods may include receiving a wrapped phase map associated with an interferometric measurement of a sample including patterned features; removing a tilt from the wrapped phase map; generating a background; detecting features in the wrapped phase, the features in the wrapped phase map corresponding to least some of the patterned features of the sample; replacing phases of the features with the background at corresponding locations in the wrapped phase map; unwrapping the modified wrapped phase map using a global phase-unwrapping; applying local phase-unwrapping to restore the phases of the features; and reapplying the tilt to generate an output unwrapped phase map.

A method for measuring interfaces of an optical element, forming part of a plurality of similar elements including at least one reference optical element, the method implemented by a device, the method including: relative positioning of each reference optical element and the measurement beam, to allow a measurement of interfaces of each reference optical element; acquisition of a reference image, of each reference element; positioning of the measured optical element to allow acquisition of a measurement image, of the optical element to be measured; determining a difference of position in a field of view of the measured element with respect to each reference optical element, based on the reference and measurement images; adjusting the position of the measured optical element in the field of view to cancel the difference of position; and measuring the interfaces of the measured optical element by the measurement beam.

The invention describes a metrology system allowing for the reduction of the errors caused by vibration of the production floor and allowing for measurements of the thickness of wafers in motion. This is accomplished by performing simultaneous measurements of spectra containing interference signals containing distance information using a plurality of probes positioned on both sides of the measured wafer on the same detector at the same time or by means of plurality of synchronized detectors. System is also able to measure thickness of the individual optically accessible layers present in the sample.

A method for optical inspection includes illuminating a patterned polymer layer on a semiconductor wafer with optical radiation over a range of infrared wavelengths, measuring spectral properties of the optical radiation reflected from multiple points on the patterned polymer layer over the range of infrared wavelengths, and based on the measured spectral properties, computing a complex refractive index of the patterned polymer layer.

A system is provided for in-situ ion beam etch rate or deposition rate measurement, including: a vacuum chamber; an ion beam source configured to direct an ion beam onto a first surface of a sample located within the vacuum chamber and to etch the first surface of the sample with an etch rate; or a material source configured to deposit material onto a first surface of a sample located within the vacuum chamber with a deposition rate; and an interferometric measurement device located at least partially within the vacuum chamber and configured to direct light onto a second surface of the sample and to determine the etch rate of the ion beam or the deposition rate of the deposited material in-situ based on light reflected from the sample.

Disclosed are apparatuses and methods for measuring a thickness. The apparatus for measuring a thickness including a light source that emits a femto-second laser, an optical coupler through which a portion of the femto-second laser is incident onto a target and other portion of the femto-second laser is incident onto a reference mirror, a detector configured to receive a reflection signal reflected on the reference mirror and a sample signal generated from the target and configured to measure a thickness of the target based on an interference signal between the reflection signal and the sample signal, and a plurality of optical fiber lines configured to connect the light source, the optical coupler, and the detector to each other may be provided.