A composite material includes a film containing oxide particles having a particle size of at least 0.4 m or more, and carbon nanotubes forming a network on a surface of the oxide particles.

A method of manufacturing a detector capable of detecting a wavelength range [.sub.8; .sub.14] centered on a wavelength .sub.10, including: forming said device on a substrate by depositing a sacrificial layer totally embedding said device; forming, on the sacrificial layer, a cap including first, second, and third optical structures transparent in said range [.sub.8; .sub.14], the second and third optical structures having equivalent refraction indexes at wavelength .sub.10 respectively greater than or equal to 3.4 and smaller than or equal to 2.3; forming a vent of access to the sacrificial layer through a portion of the cap, and then applying, through the vent, an etching to totally remove the sacrificial layer.

A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O.sub.2 plasma etching process.

The present disclosure provides a microbolometer including a substrate, a readout circuit layer disposed above the substrate, a first vanadium oxide layer disposed above the readout circuit layer, a second vanadium oxide layer disposed on the first vanadium oxide layer, and an infrared absorbing layer disposed above the second vanadium oxide layer, in which an oxygen content of the second vanadium oxide is higher than that of the first vanadium oxide layer.

A method of fabricating an IR transparent window wafer with integrated AR grating structures includes providing a handle wafer having a first surface and a second surface opposite the first surface, providing a device wafer including a single crystal silicon layer disposed on an oxide layer, the single crystal silicon layer having a planar side and the oxide layer having a bonding side that is opposite the planar side, forming AR grating structures in a first portion of the first surface of the handle wafer, bonding the bonding side of the oxide layer to the first surface of the handle wafer, and etching a recess in the planar side of the single crystal silicon layer to: remove the buried oxide layer, form a plurality of recess walls, and expose the AR grating structures in the first portion of the first surface of the handle wafer.

A thermal image sensor and a method of manufacturing the same are provided. A row electrode and a column electrode are formed on a substrate. A multi-layer stack includes a sensing layer, a first sensing electrode and a second sensing electrode which are in contact with the sensing layer with a channel formed between the first sensing electrode and the second sensing electrode, an absorbing electrode connected to the first sensing electrode, an insulating layer configured to insulate the absorbing electrode from the second sensing electrode and the sensing layer, and a protecting layer configured to cover an exterior. Supports are configured to allow the multi-layer stack to float with respect to the substrate. A first intervening electrode and a second intervening electrode are configured to connect the low electrode and the column electrode to the first sensing electrode and the second sensing electrode through the supports.

An electromagnetic wave sensor includes a substrate having transmittance of electromagnetic waves having a specific wavelength, an insulator layer provided on one surface side of the substrate, a thermistor film disposed to have a space between the thermistor film and one surface of the substrate, and a wiring part provided inside or on a surface of the insulator layer and electrically connected to the thermistor film, wherein a transmittance of the electromagnetic waves at a portion facing the thermistor film is relatively higher than a transmittance of the electromagnetic waves at a portion where the wiring part is provided in a layer in which the insulator layer is provided.

A thermal sensor, a thermal sensor array, an electronic apparatus including the thermal sensor, and an operating method of the thermal sensor are provided. The thermal sensor includes a first region onto which first infrared light is incident, a visible light radiation region configured to radiate visible light generated by incidence of the first infrared light on the first region, a second region onto which second infrared light is incident, and an image sensor configured to receive the visible light radiated from the visible light radiation region. The first region, the second region, and the visible light radiation region each include a nonlinear optical material.

A spectrophotometer includes a photonic source and a photonic detector, wherein a photonic beam from the photonic source is directed through an absorptive or reflective fluid of interest into a photonic detector. In the illustrative embodiment, the photonic source and the photonic detector are disposed on separate micro-platforms that are formed from the same layer of semiconductor material. The micro-platforms are suspended by nanowires that, in some embodiments, include phononic scattering elements. The phononic scattering elements increase the thermal isolation provided by the nanowires.

To reduce the resistance value of an infrared bolometer using semiconducting carbon nanotubes.

An infrared bolometer comprising: a substrate; an infrared detection unit; and at least one support leg configured to support the infrared detection unit in such a way that the infrared detection unit is separated from one surface of the substrate, wherein the infrared detection unit comprises a source electrode and a drain electrode spaced apart from each other, a carbon nanotube film present between the source electrode and the drain electrode, at least partially overlapping and being electrically in contact with the source electrode and the drain electrode, and serving as a light detection unit, and a gate electrode provided over or below the carbon nanotube film with an insulating film interposed, and a voltage is applied between the source electrode and the drain electrode, and the gate electrode is electrically short-circuited to either the source electrode or the drain electrode.