An apparatus is provided for nanoantenna-enhanced detection of infrared radiation. The apparatus includes one or more detector pixels. A plurality of detector pixels can constitute a focal plane array (FPA). Each detector pixel carries at least a first and a second subpattern of nanoantenna elements, with elements of the second subpattern interpolated between elements of the first subpattern. Each detector pixel also includes separate collection electrodes for collecting photogenerated current from the respective subpatterns.

An apparatus is provided for nanoantenna-enhanced detection of infrared radiation. The apparatus includes one or more detector pixels. A plurality of detector pixels can constitute a focal plane array (FPA). Each detector pixel carries at least a first and a second subpattern of nanoantenna elements, with elements of the second subpattern interpolated between elements of the first subpattern. Each detector pixel also includes separate collection electrodes for collecting photogenerated current from the respective subpatterns.

A system for measuring a sensor having two terminals includes first and second transistors with first and second control signal inputs connected to the sensor terminals. The system further includes a current divider including a reference current input, a current divider control input and first and second current outputs connected to the first and second transistors. First and second load circuits are connected to the first and second transistors at first and second differential output nodes. First and second integrator circuits are connected to the first and second differential output nodes. A comparator is driven by first and second differential output nodes. The comparator output controls a digital filter. A value of the a current divider control signal driving the current divider control input depends at least indirectly from the digital filter output.

A method for processing a raw image characterized by raw measurements S.sub.p(i,j) that are associated with active bolometers B.sub.pix_(i,j) of an imager, which bolometers are arranged in a matrix array, the imager being at an ambient temperature T.sub.amb and furthermore comprising blind bolometers B.sub.b_(k), the method, which is executed by a computer that is provided with a memory, comprising the following steps: a) a step of calculating the electrical resistances R.sub.Tc(i,j) and R.sub.Tc(k), at the temperature T.sub.amb, of the active and blind bolometers, respectively, from their respective electrical resistances R.sub.Tr(i,j) and R.sub.Tr(k) at a reference temperature T.sub.r, said resistances being stored in the memory; b) a step of determining the temperatures T.sub.sc(i,j) actually measured by each of the active bolometers B.sub.pix_(i,j) from the electrical resistances calculated in step a) and from the raw measurements S.sub.p(i,j).

A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

In a method for noncontact, radiation thermometric temperature measurement, a short-circuit photocurrent that is proportional to a received radiant power is produced in a photodiode radiation detector that is operating photovoltaically without bias voltage. The photocurrent is processed in a current to voltage converter. Subsequently, a temperature signal corresponding to the radiant power is generated. A corrective current, dependent on a temperature of the photodiode radiation detector, is added to the short-circuit photocurrent to compensate a fault current, wherein the fault current is based on an input bias current and an input offset voltage of the current to voltage converter across a temperature-dependent shunt resistance of the photodiode radiation detector. A device with a corrective current source controlled by a microcontroller is provided that can be used to perform the method.

In a method for noncontact, radiation thermometric temperature measurement, a short-circuit photocurrent that is proportional to a received radiant power is produced in a photodiode radiation detector that is operating photovoltaically without bias voltage. The photocurrent is processed in a current to voltage converter. Subsequently, a temperature signal corresponding to the radiant power is generated. A corrective current, dependent on a temperature of the photodiode radiation detector, is added to the short-circuit photocurrent to compensate a fault current, wherein the fault current is based on an input bias current and an input offset voltage of the current to voltage converter across a temperature-dependent shunt resistance of the photodiode radiation detector. A device with a corrective current source controlled by a microcontroller is provided that can be used to perform the method.

A motion detector having a bandpass filter is described herein. One device includes a passive infrared (PIR) sensor configured to generate a signal, and a bandpass filter configured to filter the signal, wherein the bandpass filter comprises a plurality of high pass filters, a plurality of low pass filters, and two operational amplifiers, wherein a portion of the plurality of high pass filters include a capacitor and two resistors.

A light detector includes: a substrate; and a membrane which is supported on a surface of the substrate so that a space is formed between the surface of the substrate and the membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line having a curved portion interposed therebetween and a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, and in which a first edge portion at the side of the line in the first wiring layer and a second edge portion at the side of the line in the second wiring layer respectively continuously extend.