An apparatus and a method for measuring pressure, gas and/or humidity, the apparatus having at least one sensor with at least one capacitor comprising at least two electrodes that are arranged in a horizontal direction relative to one another along and on a flexible support material. At least one dielectric layer is arranged between the electrodes and at least one at least partially moisture-permeable and/or moisture-absorbing and/or gas-permeable and/or gas-absorbing moisture layer is arranged at least in some places on a side, facing away from a support material, of at least one electrode and/or the dielectric layer. At least one electrode and/or the dielectric layer are thus arranged transversely between the support material and the moisture layer. A capacitance is at least partially changed by moisture hitting the dielectric layer, and a processing unit measures and/or stores this change, so as to create a capacitive moisture sensor.

A moisture sensor arrangement including a plate-like semiconductor substrate and an integrated signal processing component disposed on a first side of the semiconductor substrate. The moisture sensor arrangement including a capacitive moisture sensor connected electrically conductively to the integrated signal processing component, wherein the capacitive moisture sensor is disposed on either the first side or a second side of the semiconductor substrate that is opposite the first side of the semiconductor substrate. In addition, the plate-like semiconductor substrate includes 1) plated through-holes, by way of which elements on the first side and the second side of the semiconductor substrate are electrically connectable to one another; and 2) a temperature sensor integrated with the integrated signal processing component.

A sensor of volatile substances including: a sensitive layer, of a sensitive material that is permeable to a volatile substance and has an electrical permittivity depending upon a concentration of the volatile substance absorbed; a first electrode structure and a second electrode structure capacitively coupled together and arranged so that a capacitance between the first electrode structure and the second electrode structure is affected by the electrical permittivity of the sensitive material; and a supply device, configured to supply a heating current through one between the first electrode structure and the second electrode structure in a first operating condition, so as to heat the sensitive layer.

A moisture-sensitive film formed from a resin composition and containing a polyimide resin component. The polyimide resin component comprises a fluorinated polyimide resin. The polyimide resin component comprises a phthalimide ring and a benzene ring different from a benzene ring included in the phthalimide ring. Based on a total amount of the polyimide resin component, the benzene ring different from the benzene ring included in the phthalimide ring has a mass fraction W (Be) and the phthalimide ring has a mass fraction W (PhI) satisfying the following formula: W (PhI)/W (Be)≥1.2.

A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion, a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.

A sensor semiconductor device comprises a transducer which comprises a capacitor with at least two electrodes. The transducer further comprises a polymer which is arranged between at least two electrodes of the capacitor, and a top surface of the transducer. The polymer is able to absorb water and the top surface is arranged such that it is exposed to the environment of the sensor semiconductor device. Furthermore, at least a part of the top surface is superhydrophobic and the sensor semiconductor device is capable of measuring the humidity of the environment of the sensor semiconductor device.

A micromechanical moisture-sensor device and a corresponding manufacturing method. The micromechanical moisture-sensor device is equipped with a first electrode device situated on the substrate; a second electrode device situated on the substrate; an electrical insulation device situated between the first electrode device and the second electrode device which includes a first area, which is in contact with the first electrode device and the second electrode device, and which includes a second area, which is exposed by the first electrode device and the second electrode device; a moisture-sensitive functional layer, which is applied across the first electrode device and the second electrode device and the second area of the insulation device lying between them in such a way that it forms a moisture-sensitive resistive electrical shunt at least in some areas between the first electrode device and the second electrode device.

A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A humidity sensitive layer is disposed above at least one of the first electrode and the second electrode, where the humidity sensitive layer comprises a curable composition comprising cellulose acetate butyrate and a hydrophobic filler. In some embodiments, a dust protection layer is disposed above the humidity sensitive layer.

A gas sensing device that includes humidity compensation.

A method for fabrication of a sensor device (1) for measuring a parameter of a test substance, comprising: i) providing a substrate; ii) arranging on its front side a structured first protection layer (2); iii) arranging on the substrate with the structured first protection layer (2) a stack including first and second electrodes (3,4), a sacrificial layer between the first and second electrodes (3,4); and iv) etching in an etching step from the back side through the substrate such as to remove material of the semiconductor substrate and the sacrificial layer. The present invention also relates to such a sensor device (1).