Patent classifications
G01N27/4145
Chemical sensor and method for detecting target substance
A chemical sensor for detecting a target substance in a gas sample, including a membrane; and an olfactory receptor fragment which is fixed to the membrane. The chemical sensor optionally includes a source electrode connected to one end of the membrane; and a drain electrode connected to the other end of the membrane, in which the membrane is a graphene.
APPARATUS AND METHODS FOR PERFORMING ELECTROCHEMICAL REACTIONS
An apparatus includes a reaction vessels coupled to an electronic sensor for monitoring a reaction product in the reaction vessel; a fluidics system for sequentially delivering a plurality of reagents to the reaction vessel, the fluidics system including a plurality of reagent reservoirs in fluidic communication via a plurality of flow paths with a fluidics circuit and to a common passage in fluidic communication between the fluidics circuit and the reaction vessel, a solution reservoir in fluidic communication with the common passage via a branch passage connected with the common passage at a junction between the fluidics circuit and the reaction vessel; and an electrode in contact with a solution within the branch passage, the electrode being in electrical communication with the reaction vessel through fluid extending from the branch passage and through the common passage, the electronic sensor generating an output signal depending on a voltage of the electrode.
Hydrophilic polymeric particles and methods for making and using same
A method of forming a particle includes, in a disperse phase within an aqueous suspension, polymerizing a plurality of mer units of a hydrophilic monomer having a hydrophobic protection group, thereby forming a polymeric particle including a plurality of the hydrophobic protection groups. The method further includes converting the polymeric particle to a hydrophilic particle.
PRECISION GRAPHENE NANORIBBON WIRES FOR MOLECULAR ELECTRONICS SENSING AND SWITCHING DEVICES
A precision graphene nanoribbon (GNR) bridge molecule can include: a central GNR having a precision structure selected the following structural types: armchair, zigzag, cove, chevron, and fjord; a functional anchoring group at either end of the GNR selected from the following: amine, thiol, thioether, stannane, halide, boronic acid, boronic ester, azide, and carbene; a central functional conjugation group at a precisely specified location; and edge group functionalization with solubilizing groups selected from the following: linear and branched alkyl chains, substituted aromatic rings, oligoethylene glycol, carboxylic acids, and sulfonic acids.
TRANSISTOR-BASED BIOLOGICAL ASSAY SYSTEM COMPRISING MATING RECEPTACLE PLATE AND GATE ELECTRODE PLATE
A system for biological assay includes a first plate having a plurality of protrusions, a second plate configured for mating with said first plate, the second plate including a plurality of receptacles, each receptacle being configured to receive at least a portion of a corresponding one of said protrusions upon mating of the first plate with the second plate, wherein each protrusion includes a gate electrode configured for facing the respective receptacle upon mating of the first plate with the second plate, and wherein each receptacle further includes at least one source-drain channel operatively associated to a gate electrode carried by a respective protrusion upon mating of the first plate with the second plate.
SYSTEMS AND METHODS FOR MOLECULAR MEASUREMENTS
Systems and methods for identifying the components of a long-chain molecule by making electrical measurements from fabricated nanoscale electrodes as the molecule moves down a narrow microfluidic channel. The channel can be along the surface of a chip, through a chip, or both.
Dual gate biologically sensitive field effect transistor
A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.
CMOS compatible BioFET
The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
SEMICONDUCTOR DEVICE, BIOSENSOR, BIOSENSOR ARRAY, AND LOGIC CIRCUIT
A semiconductor device includes a first gate electrode, a first insulating unit, a source electrode, a drain electrode, and a contact part. The first insulating unit is provided on a second gate electrode configured to control a reference voltage in a transport characteristic. The source electrode is connected to the first insulating unit. The drain electrode is connected to the first insulating unit. The contact part is provided between the source electrode and the drain electrode on the first insulating unit, and being able to be in contact with a sample. The sample is able to be in contact with the first gate electrode. A surface opposite to the first insulating unit, of the contact part is configured to be in contact with the samp1e.
BioFET system
A bio-field effect transistor (bioFET) system includes a bioFET configured to receive a first voltage signal and output a current signal. A logarithmic current-to-time converter is connected to the bioFET and is configured to receive the current signal and convert the current signal to a time domain signal. The time domain signal varies logarithmically with respect to the current signal, such that the time domain signal varies linearly with respect to the first voltage signal.