An integrated biosensor structure is provided. The integrated biosensor structure includes a CMOS structure and a sensing oxide layer. The CMOS structure includes a substrate having a first surface, the substrate includes a sensing region and a logic region surrounding the sensing region; a FEOL structure having a plurality of doped regions at the first surface of the substrate; and a BEOL structure over the FEOL structure. The BEOL structure includes a first trench penetrating the BEOL structure. The sensing oxide layer is disposed over the BEOL structure and in contact with the sensing region of the substrate through the first trench. The sensing oxide layer is conformal with the first trench of the BEOL structure to form a sensing trench. A method of manufacturing an integrated biosensor structure is also provided.

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

An apparatus includes a biosensor integrated circuit (IC) chip having multiple well structures configured to receive a liquid comprising one or more biological analytes. The well structures include a passivation layer with an opening over one or more field effect transistors (gFETs) which include a layer of 2D channel material selected from molybdenum disulfide (MoS.sub.2) and graphene; a drain electrode connected to a first end of the channel; a source electrode connected to a second end of the channel, wherein the individual gFETs are configured such that liquid received by the well structure is confined to form a liquid gate above a top surface of the channel. A system and method perform various functions of the apparatus.

Nanopore structures are provided. In one aspect, a nanopore structure includes: an oxide shell surrounding a nanopore, wherein openings on both ends of the nanopore have a diameter D1, and a center of the nanopore has a diameter D2, wherein D1>D2. In another aspect, the nanopore structure includes: a first film disposed on a substrate; a second film disposed on the first film; at least one pore extending through the first film and the second film; a dielectric material disposed in the at least one pore; and a nanopore at a center of the dielectric material in the at least one pore, wherein a top opening to the nanopore has a first diameter d1, and a bottom opening to the nanopore has a second diameter d2, wherein d2>d1. Methods of forming the nanopore structures are also provided.

A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.

An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.

Presented herein are systems, methods, and architectures related to functionalization of the metallic gates of field-effect transistors (FETs) and the use of the functionalized FETs as biochemical sensors in liquid samples. The functionalization can either be a molecularly imprinted polymer or a probe material. The functionalized FETs can be used in devices for analyte detection/quantification. In particular, the functionalized FETs are used in devices for the detection and/or quantification of cytokines (e.g. interleukin) and/or cholesterol (LDL or HDL).

According to various embodiments, there is provided a sensor device that includes: a substrate and two semiconductor structures. Each semiconductor structure includes a source region and a drain region at least partially disposed within the substrate, a channel region between the source region and the drain region, and a gate region. A first semiconductor structure of the two semiconductor structures further includes a sensing element electrically connected to the first gate structure. The sensing element is configured to receive a solution. The drain regions of the two semiconductor structures are electrically coupled. The source regions of the two semiconductor structures are also electrically coupled. A mobility of charge carriers of the channel region of a second semiconductor structure of the two semiconductor structures is lower than a mobility of charge carriers of the channel region of the first semiconductor structure.

A sensing chip attached to a bandage monitors the healing process of a wound by detecting growth factors, thrombin and fibrinogen. The complementary metal-oxide semiconductor includes a functionalized working electrode, functionalized counter electrode and functionalized reference electrode. The healing progress is stimulated by generating oxygen in the wound.

A cell signal measurement electrode plate includes a first transistor including a gate terminal connected to a first selection line and a source terminal connected to a second selection line, a second transistor including a gate terminal connected to a drain terminal of the first transistor, a source terminal connected to an electrode, and a drain terminal connected to a common wiring line, and a first capacitor including one capacitance electrode connected to the drain terminal of the first transistor and another capacitance electrode connected to a capacitance element potential fixing wiring line.